Mo thin fihns are deposited on soda lime glass （SLG） substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5μm to gain a better understanding of the growth process of the f...Mo thin fihns are deposited on soda lime glass （SLG） substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of fihn growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1μm as the back contact, the Cu（InGa）Se2 solar cell can reach a conversion efficiency of 13.15%.展开更多
Deposition and structural characteristics of cadmium sulfide (CdS) thin films by chemical bath deposition (CBD) technique from a bath containing thiourea,cadmium acetate,ammonium acetate and ammonia in an aqueous solu...Deposition and structural characteristics of cadmium sulfide (CdS) thin films by chemical bath deposition (CBD) technique from a bath containing thiourea,cadmium acetate,ammonium acetate and ammonia in an aqueous solution are reported.Researches are made on the influence of the fundamental parameters including pH,temperature,and concentrations of the solution involved in the chemical bath deposition of CdS and titration or dumping of the thiourea solution on the structure characteristic of CdS thin films.The pH of the solution plays a vital role on the characteristic of the CdS thin films.The XRD patterns show that the change in the pH of the solution results in the change in crystal phase from predominant hexagonal phase to predominant cubic phase.The CdS thin films with the two different crystal phases have different influences on CIGS thin film solar cells.The crystal mismatch and the interface state density of the c-CdS(cubic phase CdS) and CIGS are about 1 419% and 8 507×10 12cm -2 respectively,and those of the h-CdS(hexagonal phase CdS) and CIGS are about 32 297% and 2 792×10 12cm -2 respectively.It is necessary for high efficiency CIGS thin film solar cells to deposit the cubic phase CdS thin films.展开更多
文摘Mo thin fihns are deposited on soda lime glass （SLG） substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of fihn growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1μm as the back contact, the Cu（InGa）Se2 solar cell can reach a conversion efficiency of 13.15%.
文摘Deposition and structural characteristics of cadmium sulfide (CdS) thin films by chemical bath deposition (CBD) technique from a bath containing thiourea,cadmium acetate,ammonium acetate and ammonia in an aqueous solution are reported.Researches are made on the influence of the fundamental parameters including pH,temperature,and concentrations of the solution involved in the chemical bath deposition of CdS and titration or dumping of the thiourea solution on the structure characteristic of CdS thin films.The pH of the solution plays a vital role on the characteristic of the CdS thin films.The XRD patterns show that the change in the pH of the solution results in the change in crystal phase from predominant hexagonal phase to predominant cubic phase.The CdS thin films with the two different crystal phases have different influences on CIGS thin film solar cells.The crystal mismatch and the interface state density of the c-CdS(cubic phase CdS) and CIGS are about 1 419% and 8 507×10 12cm -2 respectively,and those of the h-CdS(hexagonal phase CdS) and CIGS are about 32 297% and 2 792×10 12cm -2 respectively.It is necessary for high efficiency CIGS thin film solar cells to deposit the cubic phase CdS thin films.
