Fast and broadband photoelectric detection is a key process to many photoelectronic applications,during which the semiconductor light absorber plays a critical role.In this report,we prepared Cu-In-Zn-S(CIZS)nanospher...Fast and broadband photoelectric detection is a key process to many photoelectronic applications,during which the semiconductor light absorber plays a critical role.In this report,we prepared Cu-In-Zn-S(CIZS)nanospheres with different compositions via a facile hydrothermal method.These nanospheres were^200 nm in size and comprised of many small nanocrystals.A photodetector responded to the visible spectrum was demonstrated by spraying the solution processed nanospheres onto gold interdigital electrodes.The photoelectric characterization of these devices revealed that CIZS nanospheres with low molar ratio of n(Cu)/n(In)exhibited improved photoelectric response compared to those with high n(Cu)/n(In),which was attributed to the reduced defects.The relatively large switching ratio(Ion/Ioff),fast response and wide spectral coverage of the CIZS-based photodetector render it a promising potential candidate for photoelectronic applications.展开更多
The Cu-In-Zn-Se thin film was synthesized by changing the contribution of In in chalcopyrite CulnSe2 with Zn. The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quate...The Cu-In-Zn-Se thin film was synthesized by changing the contribution of In in chalcopyrite CulnSe2 with Zn. The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quaternary Cu-In-Zn-Se compound. They were in the polycrystalline nature without any post-thermal process, and the main orientation was found to be in the （112） direction with tetragonal crystalline structure. With increasing annealing temperature, the peak intensities in preferred orientation became more pronounced and grain sizes were in increasing behavior from 6.0 to 25.0 nm. The samples had almost the same atomic composition of Cu0.sIn0.sZnSe2. However, EDS results of the deposited films indicated that there was Se re-evaporation and/or segregation with the annealing in the structure of the film. According to the optical analysis, the transmittance values of the films increased with the annealing temperature. The absorption coefficient of the films was calculated as around 105 cm-1 in the visible region. Moreover, optical band gap values were found to be changing in between 2.12 and 2.28 eV depending on annealing temperature. The temperature-dependent dark- and photo-conductivity measurements were carried out to investigate the electrical characteristics of the films.展开更多
基金The authors would like to gratefully acknowledge the funding support from the Natural Science Foundation of Jiangsu Province (project number BK20160278)the China Postdoctoral Science Foundation (2019M651677)+4 种基金the Jiangsu Shuangchuang Program, the National Key Research and Development Program of China (Grant No. 2018YFB2200500)the National Natural Science Foundation of China (Grant Nos. 61975023 and 61674023)the Fundamental Research Funds for the Central Universities (106112017CDJQJ128837, 2019CDYGYB010, 2019CDYGYB019, and 2018CDQYDL0051)the Chongqing Research Program of Basic Research and Frontier Technology (cstc2017jcyjB0127)the International Science & Technology Cooperation Program of China (2016YFE0119300).
文摘Fast and broadband photoelectric detection is a key process to many photoelectronic applications,during which the semiconductor light absorber plays a critical role.In this report,we prepared Cu-In-Zn-S(CIZS)nanospheres with different compositions via a facile hydrothermal method.These nanospheres were^200 nm in size and comprised of many small nanocrystals.A photodetector responded to the visible spectrum was demonstrated by spraying the solution processed nanospheres onto gold interdigital electrodes.The photoelectric characterization of these devices revealed that CIZS nanospheres with low molar ratio of n(Cu)/n(In)exhibited improved photoelectric response compared to those with high n(Cu)/n(In),which was attributed to the reduced defects.The relatively large switching ratio(Ion/Ioff),fast response and wide spectral coverage of the CIZS-based photodetector render it a promising potential candidate for photoelectronic applications.
文摘The Cu-In-Zn-Se thin film was synthesized by changing the contribution of In in chalcopyrite CulnSe2 with Zn. The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quaternary Cu-In-Zn-Se compound. They were in the polycrystalline nature without any post-thermal process, and the main orientation was found to be in the （112） direction with tetragonal crystalline structure. With increasing annealing temperature, the peak intensities in preferred orientation became more pronounced and grain sizes were in increasing behavior from 6.0 to 25.0 nm. The samples had almost the same atomic composition of Cu0.sIn0.sZnSe2. However, EDS results of the deposited films indicated that there was Se re-evaporation and/or segregation with the annealing in the structure of the film. According to the optical analysis, the transmittance values of the films increased with the annealing temperature. The absorption coefficient of the films was calculated as around 105 cm-1 in the visible region. Moreover, optical band gap values were found to be changing in between 2.12 and 2.28 eV depending on annealing temperature. The temperature-dependent dark- and photo-conductivity measurements were carried out to investigate the electrical characteristics of the films.
