Although silver(Ag) substitution offers several benefits in eliminating bulk defects and facilitating interface type inversion for Cu2ZnSn(S,Se)4(CZTSSe) photovoltaic(PV) technology, its further development is still h...Although silver(Ag) substitution offers several benefits in eliminating bulk defects and facilitating interface type inversion for Cu2ZnSn(S,Se)4(CZTSSe) photovoltaic(PV) technology, its further development is still hindered by the fairly low electrical conductivity due to the significant decrease of acceptors amount.In this work, a versatile Li–Ag co-doping strategy is demonstrated to mitigate the poor electrical conductivity arising from Ag through direct incorporating Li via postdeposition treatment(PDT) on top of the Ag-substituted CZTSSe absorber. Depth characterizations demonstrate that Li incorporation increases ptype carrier concentration, improves the carrier collection within the bulk, reduces the defects energy level as well as inverts the electric field polarity at grain boundaries(GBs) for Ag-substituted CZTSSe system. Benefiting from this lithium-assisted complex engineering of electrical performance both in grain interior(GI) and GBs, the power conversion efficiency(PCE) is finally increased from 9.21% to 10.29%. This systematic study represents an effective way to overcome the challenges encountered in Ag substitution,and these findings support a new aspect that the synergistic effects of double cation dopant will further pave the way for the development of high efficiency kesterite PV technology.展开更多
Cu2Se is a promising"phonon liquid-electron crystal"thermoelectric material with excellent thermoelectric performance.In this work,Cd-doped Cu2-xSeCdx(x=0,0.0075,0.01,and 0.02)samples were prepared using NaC...Cu2Se is a promising"phonon liquid-electron crystal"thermoelectric material with excellent thermoelectric performance.In this work,Cd-doped Cu2-xSeCdx(x=0,0.0075,0.01,and 0.02)samples were prepared using NaCl flux method.The solubility of Cd in Cu2Se at room temperature was less than 6%,and a second phase of CdSe was found in the samples with large initial Cd content(x=0.01 and 0.02).Field-emission scanning electron microscopic image showed that the arranged lamellae formed a large-scale layered structure with an average thickness of approximately 100 nm.Transmission electron microscopy demonstrated that doping of Cd atoms did not destroy the crystal integrity of Cu2Se.A small amount of Cd in Cu2Se could reduce the electrical and thermal conductivities of the material,thus significantly enhancing its thermoelectric performance.With the increase in Cd content in the sample,the carrier concentration decreased and the mobility increased gradually.Thermogravimetric differential thermal analysis showed that no weight loss occurred below the melting point.Excessive Cd doping led to the emergence of the second phase of CdSe in the sample,thus significantly increasing the thermal conductivity of the material.A maximum ZT value of 1.67 at 700 K was obtained in the Cu1.9925SeCd0.0075 sample.展开更多
基金the National Natural Science Foundation of China(61874159,61974173,51702085,51802081 and 21603058)the Joint Talent Cultivation Funds of NSFC-HN(U1704151)the Science and Technology Innovation Talents in Universities of Henan Province(18HASTIT016)。
文摘Although silver(Ag) substitution offers several benefits in eliminating bulk defects and facilitating interface type inversion for Cu2ZnSn(S,Se)4(CZTSSe) photovoltaic(PV) technology, its further development is still hindered by the fairly low electrical conductivity due to the significant decrease of acceptors amount.In this work, a versatile Li–Ag co-doping strategy is demonstrated to mitigate the poor electrical conductivity arising from Ag through direct incorporating Li via postdeposition treatment(PDT) on top of the Ag-substituted CZTSSe absorber. Depth characterizations demonstrate that Li incorporation increases ptype carrier concentration, improves the carrier collection within the bulk, reduces the defects energy level as well as inverts the electric field polarity at grain boundaries(GBs) for Ag-substituted CZTSSe system. Benefiting from this lithium-assisted complex engineering of electrical performance both in grain interior(GI) and GBs, the power conversion efficiency(PCE) is finally increased from 9.21% to 10.29%. This systematic study represents an effective way to overcome the challenges encountered in Ag substitution,and these findings support a new aspect that the synergistic effects of double cation dopant will further pave the way for the development of high efficiency kesterite PV technology.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61864012 and 21701140)the Program for Innovative Research Team(in Science and Technology)in University of Yunnan Province,China.
文摘Cu2Se is a promising"phonon liquid-electron crystal"thermoelectric material with excellent thermoelectric performance.In this work,Cd-doped Cu2-xSeCdx(x=0,0.0075,0.01,and 0.02)samples were prepared using NaCl flux method.The solubility of Cd in Cu2Se at room temperature was less than 6%,and a second phase of CdSe was found in the samples with large initial Cd content(x=0.01 and 0.02).Field-emission scanning electron microscopic image showed that the arranged lamellae formed a large-scale layered structure with an average thickness of approximately 100 nm.Transmission electron microscopy demonstrated that doping of Cd atoms did not destroy the crystal integrity of Cu2Se.A small amount of Cd in Cu2Se could reduce the electrical and thermal conductivities of the material,thus significantly enhancing its thermoelectric performance.With the increase in Cd content in the sample,the carrier concentration decreased and the mobility increased gradually.Thermogravimetric differential thermal analysis showed that no weight loss occurred below the melting point.Excessive Cd doping led to the emergence of the second phase of CdSe in the sample,thus significantly increasing the thermal conductivity of the material.A maximum ZT value of 1.67 at 700 K was obtained in the Cu1.9925SeCd0.0075 sample.
