Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by using the sol-gel method and rapid thermal annealing （RTA）, and their magnetic properties and crystalline structures were investigated. The samples...Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by using the sol-gel method and rapid thermal annealing （RTA）, and their magnetic properties and crystalline structures were investigated. The samples calcined at and above 600 ℃ have a single-phase spinel structure and the average grain size of the sample calcined at 600 ℃ is about 20 nm. The initial permeability μi, saturation magnetization M and coercivity H of the samples increase with the increasing calcination temperature. The sample calcined at 600 ℃ exhibits an excellent soft magnetic performance, which has μi=33.97 （10 MHz）, Hc=15.62 Oe and Ms=228.877 emu/cm^3. Low-temperature annealing can enhance the magnetic properties of the samples. The work shows that using the sol-gel method in conjunction with RTA is a promising way to fabricate integrated thin-film devices.展开更多
Undoped and Zn-doped Cu2O films were deposited onto glass substrates using successive ionic layer adsorption and reaction（SILAR） technique with different Zn doping levels（0, 1, 2, 3, 5 and 10 wt%）. The structural,...Undoped and Zn-doped Cu2O films were deposited onto glass substrates using successive ionic layer adsorption and reaction（SILAR） technique with different Zn doping levels（0, 1, 2, 3, 5 and 10 wt%）. The structural,optical, and surface morphological studies were carried out and reported. The structural study revealed that the crystalline quality is gradually enhanced up to 5 wt% of Zn doping level, and then quality begins to degrade for further increase in doping level. Moreover, the preferential orientation changes from（111） to（110） for the highest doping level were examined. Optical study shows that the transmittance（65%） and optical band gap values are maximum（2.41 e V） when the Zn doping level is at 5 wt%. The photoluminescence study confirms the presence of various defects in the Cu2O matrix and also the variation obtained in the optical band gap from the transmittance data. SEM images revealed the annealinginduced changes in the surface morphology of the films.展开更多
基金the National Natural Science Foundation of China (No. 90607021).
文摘Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by using the sol-gel method and rapid thermal annealing （RTA）, and their magnetic properties and crystalline structures were investigated. The samples calcined at and above 600 ℃ have a single-phase spinel structure and the average grain size of the sample calcined at 600 ℃ is about 20 nm. The initial permeability μi, saturation magnetization M and coercivity H of the samples increase with the increasing calcination temperature. The sample calcined at 600 ℃ exhibits an excellent soft magnetic performance, which has μi=33.97 （10 MHz）, Hc=15.62 Oe and Ms=228.877 emu/cm^3. Low-temperature annealing can enhance the magnetic properties of the samples. The work shows that using the sol-gel method in conjunction with RTA is a promising way to fabricate integrated thin-film devices.
基金given by the University Grants Commission of India through the Major Research Project [UGC-MRP: F. No. 41-937/2012(SR)]
文摘Undoped and Zn-doped Cu2O films were deposited onto glass substrates using successive ionic layer adsorption and reaction（SILAR） technique with different Zn doping levels（0, 1, 2, 3, 5 and 10 wt%）. The structural,optical, and surface morphological studies were carried out and reported. The structural study revealed that the crystalline quality is gradually enhanced up to 5 wt% of Zn doping level, and then quality begins to degrade for further increase in doping level. Moreover, the preferential orientation changes from（111） to（110） for the highest doping level were examined. Optical study shows that the transmittance（65%） and optical band gap values are maximum（2.41 e V） when the Zn doping level is at 5 wt%. The photoluminescence study confirms the presence of various defects in the Cu2O matrix and also the variation obtained in the optical band gap from the transmittance data. SEM images revealed the annealinginduced changes in the surface morphology of the films.
