采用 LBL(layer- by- layer)法制备了 Cu2 Sn S3 薄膜。即首先采用电化学方法在 Sn O2 衬底上制备 Sn S薄膜 ,然后又在其上用化学沉积法制备 Cu S薄膜 ,最后进行退火处理得到厚度约为960 nm的 Cu2 Sn S3 薄膜。探讨了薄膜的制备机理、...采用 LBL(layer- by- layer)法制备了 Cu2 Sn S3 薄膜。即首先采用电化学方法在 Sn O2 衬底上制备 Sn S薄膜 ,然后又在其上用化学沉积法制备 Cu S薄膜 ,最后进行退火处理得到厚度约为960 nm的 Cu2 Sn S3 薄膜。探讨了薄膜的制备机理、生长速度、结构和光学特性。制备的薄膜为多晶(Cu2 Sn S3 ) 72 z(三斜或假单斜晶系 )结构 ,其直接光学带隙约为 1 .0 5 e V。展开更多
为了验证采用金属单质靶与硫属化合物靶混合溅射法制备Cu_2Sn S_3(CTS)薄膜及太阳电池的可行性,在镀钼的钠钙玻璃上通过磁控溅射Sn和Cu S靶制备CTS预制层后,再经过低温合金化和高温硫化过程制备CTS薄膜,研究了硫化过程中不同升温速率对...为了验证采用金属单质靶与硫属化合物靶混合溅射法制备Cu_2Sn S_3(CTS)薄膜及太阳电池的可行性,在镀钼的钠钙玻璃上通过磁控溅射Sn和Cu S靶制备CTS预制层后,再经过低温合金化和高温硫化过程制备CTS薄膜,研究了硫化过程中不同升温速率对CTS薄膜表面形貌的影响。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)及配属的能谱仪(EDS)、拉曼散射(Raman)对薄膜的晶体结构、表面和截面形貌、薄膜组分、物相进行表征分析,利用紫外-可见光光度计和霍尔测试系统表征了薄膜的光电特性。在硫化升温速率为35℃/min的条件下,获得了表面致密平整且纯相的单斜结构CTS薄膜,并用CTS薄膜制备了太阳电池。随后在标准测试条件(AM1.5,100 m W/cm^2,300 K)下采用KEITHLEY的2400数字源表测试了电池的I-V特性,其开路电压为299 m V,短路电流密度为16.6 m A/cm^2,光电转换效率为1.18%。结果表明,采用磁控溅射金属单质靶Sn与硫属化合物靶Cu S有望制备出高效CTS薄膜太阳电池。展开更多
The Cu2ZnSnS4 thin film was prepared by a facile solution method without vacuum environment and toxic substance. The formation mechanism of the film was studied by transmission electron microscopy (TEM), X-ray diffrac...The Cu2ZnSnS4 thin film was prepared by a facile solution method without vacuum environment and toxic substance. The formation mechanism of the film was studied by transmission electron microscopy (TEM), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and Raman scattering measurements. Through cyclic voltammetry and photo-electricity tests, the electrocatalytic activity of the prepared film as the counter electrode of dye-sensitizedsolar cell was also studied. The results show that the mixed precursor solution mainly consists of Cu2SnS3 nanoparticles and Zn ions.After 550 °C annealing process on the precursor film prepared from the mixed solution, Cu2ZnSnS4 thin film is obtained. Besides, itis found that the prepared Cu2ZnSnS4 thin film has the electrocatalytic activity toward the redox reaction of I3?/I? and the dye-sensitized solar cell with the prepared Cu2ZnSnS4 thin film as the counter electrode achieves the efficiency of 1.09%.展开更多
Flower-like Cu2SnS3 nanostructures composed of nano-flakes were successfully synthesized by solvothermal technique at 180 ℃ for 16 h. In the preparation process, CuCl2·H2O, SnCl2·2H2O and thiourea were used...Flower-like Cu2SnS3 nanostructures composed of nano-flakes were successfully synthesized by solvothermal technique at 180 ℃ for 16 h. In the preparation process, CuCl2·H2O, SnCl2·2H2O and thiourea were used as raw materials, and ethylene glycol were used as solvent. The results showed that the obtained product was pure phase Cu2SnS3. The average diameter of Cu2SnS3 flowers and the thickness of the nano-flakes were about 1-1.5 μm and 10 nm, respectively. The influence of reaction time and solvents on the morphology, size and structure of the products was investigated by powder X-ray diffraction and field-emission scan electron microscopy （FESEM）. The ultraviolet-visible absorption spectrum measurement indicated that the band gap of the sample was about 1.26 eV and could be applied to the absorbing layer of thin solar cell. The possible formation mechanism of flower-like Cu2SnS3 was also proposed and discussed.展开更多
Morphology-controllable Cu2SnS3 thin films on solvothermal process and used in dye-sensitized solar cells as Mo-glass were prepared via a facile in situ one-step counter electrodes. The effects of different solvents ...Morphology-controllable Cu2SnS3 thin films on solvothermal process and used in dye-sensitized solar cells as Mo-glass were prepared via a facile in situ one-step counter electrodes. The effects of different solvents on the morphology of films were investigated. DSC based on the porous net-like Cu2SnS3 thin film as counter electrodes showed a power conversion efficiency of 2.30%, which was improved to 3.35% after annealing.展开更多
Ternary sphere-like Cu2 SnS3（CTS）semiconductor and 2D hexagonal sheets were synthesized via a simple solvothermal method using PVP as the surface ligand at two temperatures of 180 and 220 X.The structural,morphologi...Ternary sphere-like Cu2 SnS3（CTS）semiconductor and 2D hexagonal sheets were synthesized via a simple solvothermal method using PVP as the surface ligand at two temperatures of 180 and 220 X.The structural,morphological,and chemical compositions as well as optical properties of as-synthesized CTS particles were characterized using X-ray diffraction（XRD）,Raman spectroscopy,energy dispersive X-ray spectrometry（EDS）,field emission scanning electron microscopy（FESEM）,and UV-Vis spectroscopy.The size of sphere-like particles and the side length of hexagonal sheets were within the range of 120-140 nm and 500 nm-2 μm,respectively.FESEM,XRD,and EDS were analyzed to investigate the mechanism of the morphological evolution of CTS particles.CTS particles showed proliferation of Sn atomic ratio,which is strongly sensitive to reaction temperature and,highly affects the increase of band gap energy from 1.36 to 1.53 eV due to generation metal defects and formation SnS2-The optical analysis via the transmittance and reflectance reveals that the band-gap energy of dropcasted CTS thin films decreases after annealing due to grain growth and change of chemical compositions.Photo-responses of CTS nanocrystal thin films indicated a considerable increase in the conductivity of the films under light illumination.All these results showed the potential of these films for solar cell applications.展开更多
文摘采用 LBL(layer- by- layer)法制备了 Cu2 Sn S3 薄膜。即首先采用电化学方法在 Sn O2 衬底上制备 Sn S薄膜 ,然后又在其上用化学沉积法制备 Cu S薄膜 ,最后进行退火处理得到厚度约为960 nm的 Cu2 Sn S3 薄膜。探讨了薄膜的制备机理、生长速度、结构和光学特性。制备的薄膜为多晶(Cu2 Sn S3 ) 72 z(三斜或假单斜晶系 )结构 ,其直接光学带隙约为 1 .0 5 e V。
文摘为了验证采用金属单质靶与硫属化合物靶混合溅射法制备Cu_2Sn S_3(CTS)薄膜及太阳电池的可行性,在镀钼的钠钙玻璃上通过磁控溅射Sn和Cu S靶制备CTS预制层后,再经过低温合金化和高温硫化过程制备CTS薄膜,研究了硫化过程中不同升温速率对CTS薄膜表面形貌的影响。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)及配属的能谱仪(EDS)、拉曼散射(Raman)对薄膜的晶体结构、表面和截面形貌、薄膜组分、物相进行表征分析,利用紫外-可见光光度计和霍尔测试系统表征了薄膜的光电特性。在硫化升温速率为35℃/min的条件下,获得了表面致密平整且纯相的单斜结构CTS薄膜,并用CTS薄膜制备了太阳电池。随后在标准测试条件(AM1.5,100 m W/cm^2,300 K)下采用KEITHLEY的2400数字源表测试了电池的I-V特性,其开路电压为299 m V,短路电流密度为16.6 m A/cm^2,光电转换效率为1.18%。结果表明,采用磁控溅射金属单质靶Sn与硫属化合物靶Cu S有望制备出高效CTS薄膜太阳电池。
基金Projects(51204214,51272292,51222403)supported by the National Natural Science Foundation of China
文摘The Cu2ZnSnS4 thin film was prepared by a facile solution method without vacuum environment and toxic substance. The formation mechanism of the film was studied by transmission electron microscopy (TEM), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and Raman scattering measurements. Through cyclic voltammetry and photo-electricity tests, the electrocatalytic activity of the prepared film as the counter electrode of dye-sensitizedsolar cell was also studied. The results show that the mixed precursor solution mainly consists of Cu2SnS3 nanoparticles and Zn ions.After 550 °C annealing process on the precursor film prepared from the mixed solution, Cu2ZnSnS4 thin film is obtained. Besides, itis found that the prepared Cu2ZnSnS4 thin film has the electrocatalytic activity toward the redox reaction of I3?/I? and the dye-sensitized solar cell with the prepared Cu2ZnSnS4 thin film as the counter electrode achieves the efficiency of 1.09%.
基金support from the National Natural Science Foundation of China(Grant Nos.50972107 and 51272059)the Key Scientific and Technological Innovation Teams of Zhejiang Province,China(No. 2009R50010)+1 种基金the Natural Science Foundation of Liaoning Province,China(No.201202087)Program of Science and Technology Project of Wenzhou,China(No.G20110012)
文摘Flower-like Cu2SnS3 nanostructures composed of nano-flakes were successfully synthesized by solvothermal technique at 180 ℃ for 16 h. In the preparation process, CuCl2·H2O, SnCl2·2H2O and thiourea were used as raw materials, and ethylene glycol were used as solvent. The results showed that the obtained product was pure phase Cu2SnS3. The average diameter of Cu2SnS3 flowers and the thickness of the nano-flakes were about 1-1.5 μm and 10 nm, respectively. The influence of reaction time and solvents on the morphology, size and structure of the products was investigated by powder X-ray diffraction and field-emission scan electron microscopy （FESEM）. The ultraviolet-visible absorption spectrum measurement indicated that the band gap of the sample was about 1.26 eV and could be applied to the absorbing layer of thin solar cell. The possible formation mechanism of flower-like Cu2SnS3 was also proposed and discussed.
基金financially supported by the National Natural Science Foundation of China (No. 21203226)
文摘Morphology-controllable Cu2SnS3 thin films on solvothermal process and used in dye-sensitized solar cells as Mo-glass were prepared via a facile in situ one-step counter electrodes. The effects of different solvents on the morphology of films were investigated. DSC based on the porous net-like Cu2SnS3 thin film as counter electrodes showed a power conversion efficiency of 2.30%, which was improved to 3.35% after annealing.
文摘Ternary sphere-like Cu2 SnS3（CTS）semiconductor and 2D hexagonal sheets were synthesized via a simple solvothermal method using PVP as the surface ligand at two temperatures of 180 and 220 X.The structural,morphological,and chemical compositions as well as optical properties of as-synthesized CTS particles were characterized using X-ray diffraction（XRD）,Raman spectroscopy,energy dispersive X-ray spectrometry（EDS）,field emission scanning electron microscopy（FESEM）,and UV-Vis spectroscopy.The size of sphere-like particles and the side length of hexagonal sheets were within the range of 120-140 nm and 500 nm-2 μm,respectively.FESEM,XRD,and EDS were analyzed to investigate the mechanism of the morphological evolution of CTS particles.CTS particles showed proliferation of Sn atomic ratio,which is strongly sensitive to reaction temperature and,highly affects the increase of band gap energy from 1.36 to 1.53 eV due to generation metal defects and formation SnS2-The optical analysis via the transmittance and reflectance reveals that the band-gap energy of dropcasted CTS thin films decreases after annealing due to grain growth and change of chemical compositions.Photo-responses of CTS nanocrystal thin films indicated a considerable increase in the conductivity of the films under light illumination.All these results showed the potential of these films for solar cell applications.
