Inorderto study the influence ofCu-rich growth on the performance ofthe Cu2ZnSnSe4 （CZTSe）thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temper...Inorderto study the influence ofCu-rich growth on the performance ofthe Cu2ZnSnSe4 （CZTSe）thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temperature to reduce the existence time of Cux Sey at the first period caused by the volatility of SnSex. This study examines the surface morphology and device performance in Cu-rich growth and close-to-stoichiometric growth. Although the grain size of Cu-rich growth film increases a little, the difference was not dramatic as the results of CIGS reported previously. A model based on the grain boundary migration theory is proposed to explain the experimental results. The mechanisms of Cu-rich growth between CZTSe and CIGS might be different.展开更多
The kesterite thin film solar cells based on the quaternary Cu2ZnSnS4 and Cu2ZnSnSe4 and their alloys Cu2ZnSn（S,Se）4 have been considered as environment-friendly and non-toxic alternatives to the currently commercia...The kesterite thin film solar cells based on the quaternary Cu2ZnSnS4 and Cu2ZnSnSe4 and their alloys Cu2ZnSn（S,Se）4 have been considered as environment-friendly and non-toxic alternatives to the currently commercialized CdTe and Cu（In,Ga）Se2 thin film solar cells. From the theoretical point of view, we will review how the group I2-II-IV-VI4 quaternary compound semiconductors are derived from the binary CdTe and the ternary CuInSe2 or CuGaSe2 through the cation mutation, and how the crystal structure and electronic band structure evolve as the component elements change. The increased structural and chemical freedom in these quaternary semiconductors opens up new possibility for the tailoring of material properties and design of new light-absorber semiconductors. However, the increased freedom also makes the development of high-efficiency solar cells more challenging because much more intrinsic point defects, secondary phases, surfaces, and grain-boundaries can exist in the thin films and influence the photovoltaic performance in a way different from that in the conventional CdTe and Cu（In,Ga）Se2 solar cells. The experimental characterization of the properties of defects, secondary phase, and grain-boundaries is currently not very efficient and direct, especially for these quaternary compounds. First-principles calculations have been successfully used in the past decade for studying these properties. Here we will review the theoretical progress in the study of the mixed-cation and mixed-anion alloys of the group I2-II-IV- VI4 semiconductors, defects, alkaline dopants, and grain boundaries, which provided very important information for the optimization of the kesterite solar cell performance.展开更多
Cu2ZnSnSe4 （CZTSe） thin film solar cells have been fabricated using a one-step co-evaporation technique. The structural properties of polycrystalline CZTSe films deposited at different selenium evaporation temperatu...Cu2ZnSnSe4 （CZTSe） thin film solar cells have been fabricated using a one-step co-evaporation technique. The structural properties of polycrystalline CZTSe films deposited at different selenium evaporation temperatures （TSe） have been investigated using X-ray diffraction spectra, scanning electron microscopy, and atomic force microscopy. A relationship between TSe and the secondary phases deposited in the initial stage is established to explain the experimental observations. The Se flux is not necessarily increased too much to reduce Sn loss and the consumption of Se during fabrication could also be reduced. The best solar cell, with an efficiency of 2.32%, was obtained at a medium Tse of 230 ℃ （active area 0.34 cm2）.展开更多
Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with optimum band gaps about 1.5 eV are important absorbers for solar cells. The elastic constants and the thermo-physical properties of the stannite-type CZTS and CZTSe are cal...Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with optimum band gaps about 1.5 eV are important absorbers for solar cells. The elastic constants and the thermo-physical properties of the stannite-type CZTS and CZTSe are calculated by using density-functional theory (DFT) and the quasi-harmonic Debye model. The bonding strength along the [100] and [010] directions is the same to that along the [001] direction and the shear elastic properties of the {001} plane are anisotropic for CZTS and CZTSe. Both compounds exhibit ductile behavior due to their high ratio of bulk modulus to shear modulus (K/G). The values of thermal capacity are close to 200 J/(mol·K) at above 300 K, and the thermal expansion coefficients decrease with increasing pressure at same temperature. The entropy is variable by power-exponent, and the internal energy is almost linear with increasing temperature for CZTS and CZTSe. The Gibbs energy of CZTS is lower than that of CZTSe under same temperature and pressure. The Debye temperatures are 297 and 232 K, and Grneisen parameters are 2.36 and 2.37 for CZTS and CZTSe at 300 K, respectively.展开更多
基金supported by the Specialized Research Fund for the PhD Program of Higher Education(No.20120031110039)
文摘Inorderto study the influence ofCu-rich growth on the performance ofthe Cu2ZnSnSe4 （CZTSe）thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temperature to reduce the existence time of Cux Sey at the first period caused by the volatility of SnSex. This study examines the surface morphology and device performance in Cu-rich growth and close-to-stoichiometric growth. Although the grain size of Cu-rich growth film increases a little, the difference was not dramatic as the results of CIGS reported previously. A model based on the grain boundary migration theory is proposed to explain the experimental results. The mechanisms of Cu-rich growth between CZTSe and CIGS might be different.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0700700)the National Natural Science Foundation of China(Grant Nos.61574059 and 61722402)+1 种基金Shu-Guang Program,China(Grant No.15SG20)CC of ECNU,China
文摘The kesterite thin film solar cells based on the quaternary Cu2ZnSnS4 and Cu2ZnSnSe4 and their alloys Cu2ZnSn（S,Se）4 have been considered as environment-friendly and non-toxic alternatives to the currently commercialized CdTe and Cu（In,Ga）Se2 thin film solar cells. From the theoretical point of view, we will review how the group I2-II-IV-VI4 quaternary compound semiconductors are derived from the binary CdTe and the ternary CuInSe2 or CuGaSe2 through the cation mutation, and how the crystal structure and electronic band structure evolve as the component elements change. The increased structural and chemical freedom in these quaternary semiconductors opens up new possibility for the tailoring of material properties and design of new light-absorber semiconductors. However, the increased freedom also makes the development of high-efficiency solar cells more challenging because much more intrinsic point defects, secondary phases, surfaces, and grain-boundaries can exist in the thin films and influence the photovoltaic performance in a way different from that in the conventional CdTe and Cu（In,Ga）Se2 solar cells. The experimental characterization of the properties of defects, secondary phase, and grain-boundaries is currently not very efficient and direct, especially for these quaternary compounds. First-principles calculations have been successfully used in the past decade for studying these properties. Here we will review the theoretical progress in the study of the mixed-cation and mixed-anion alloys of the group I2-II-IV- VI4 semiconductors, defects, alkaline dopants, and grain boundaries, which provided very important information for the optimization of the kesterite solar cell performance.
基金supported by the Specialized Research Fund for the PhD Program of Higher Education(No.20120031110039)
文摘Cu2ZnSnSe4 （CZTSe） thin film solar cells have been fabricated using a one-step co-evaporation technique. The structural properties of polycrystalline CZTSe films deposited at different selenium evaporation temperatures （TSe） have been investigated using X-ray diffraction spectra, scanning electron microscopy, and atomic force microscopy. A relationship between TSe and the secondary phases deposited in the initial stage is established to explain the experimental observations. The Se flux is not necessarily increased too much to reduce Sn loss and the consumption of Se during fabrication could also be reduced. The best solar cell, with an efficiency of 2.32%, was obtained at a medium Tse of 230 ℃ （active area 0.34 cm2）.
基金supported by the National Natural Science Foundation of China (No. 51075197)
文摘Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with optimum band gaps about 1.5 eV are important absorbers for solar cells. The elastic constants and the thermo-physical properties of the stannite-type CZTS and CZTSe are calculated by using density-functional theory (DFT) and the quasi-harmonic Debye model. The bonding strength along the [100] and [010] directions is the same to that along the [001] direction and the shear elastic properties of the {001} plane are anisotropic for CZTS and CZTSe. Both compounds exhibit ductile behavior due to their high ratio of bulk modulus to shear modulus (K/G). The values of thermal capacity are close to 200 J/(mol·K) at above 300 K, and the thermal expansion coefficients decrease with increasing pressure at same temperature. The entropy is variable by power-exponent, and the internal energy is almost linear with increasing temperature for CZTS and CZTSe. The Gibbs energy of CZTS is lower than that of CZTSe under same temperature and pressure. The Debye temperatures are 297 and 232 K, and Grneisen parameters are 2.36 and 2.37 for CZTS and CZTSe at 300 K, respectively.
