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Cu(In,Ga)Se_2集成电池吸收层的三步共蒸工艺 被引量:5
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作者 张力 孙云 +4 位作者 何青 徐传明 肖建平 薛玉明 李长健 《太阳能学报》 EI CAS CSCD 北大核心 2006年第9期895-899,共5页
利用三步共蒸法工艺在10cm×10cm玻璃衬底上生长出电池吸收层CuIn_(0.7)Ga_(0.3)Se_2薄膜。通过XRF和XRD谱,分析了不同预置层(Precursor)(In_(0.7)Ga_(0.3))_2Se_3生长温度下CuIn_(0.7)Ga_(0.3)Se_2薄膜的结构特性。预置层生... 利用三步共蒸法工艺在10cm×10cm玻璃衬底上生长出电池吸收层CuIn_(0.7)Ga_(0.3)Se_2薄膜。通过XRF和XRD谱,分析了不同预置层(Precursor)(In_(0.7)Ga_(0.3))_2Se_3生长温度下CuIn_(0.7)Ga_(0.3)Se_2薄膜的结构特性。预置层生长温度分别为300、340和400℃时,所制备的集成组件的转换效率对应为4.23%、5.16%和7.03%(测试条件为:AM1.5,1000W/cm^2)。其组件效率的提高,归因于在预置层生长温度为400℃时所制备的CuIn_(0.7)Ga_(0.3)Se_2薄膜具有良好的结构特性和组份均匀性。 展开更多
关键词 cuin0.7ga0.3se2薄膜 预置层(In0.7Ga0.3)2Se3 集成组件
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电子束蒸镀法制备CuIn_(0.7)Ga_(0.3)Se_2薄膜太阳电池的性能 被引量:3
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作者 王星星 张福勤 +3 位作者 周俊 郑吉祥 黎炳前 刘怡 《中国有色金属学报》 EI CAS CSCD 北大核心 2016年第1期103-111,共9页
封装石英管真空熔炼合成CuIn0.7Ga0.3Se2(CIGS)块体,再采用电子束蒸镀此块体,制备用于太阳电池吸收层的CIGS薄膜,然后对薄膜进行不同温度的真空退火处理。分别采用XRD、EDS、SEM及光谱分析等方法,研究CIGS块体和退火薄膜的表面形貌、... 封装石英管真空熔炼合成CuIn0.7Ga0.3Se2(CIGS)块体,再采用电子束蒸镀此块体,制备用于太阳电池吸收层的CIGS薄膜,然后对薄膜进行不同温度的真空退火处理。分别采用XRD、EDS、SEM及光谱分析等方法,研究CIGS块体和退火薄膜的表面形貌、晶体结构、成分或者光电性能。结果表明:在1200℃、保温2 h后,采用真空熔炼获得结晶性能较好、单一黄铜矿结构的CuIn0.7Ga0.3Se2块体。随着退火温度的升高,薄膜中In-Se杂质相分解,从而获得单一相的CIGS薄膜;并且颗粒不断长大,达到1.03.5μm;成分和光学禁带不断得到优化。600℃退火薄膜是比较符合理想太阳电池要求的吸收层材料。 展开更多
关键词 太阳电池 cuin0.7ga0.3se2 真空熔炼 电子束蒸镀 退火处理
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镓酸镧基中温-SOFC的新型阳极NiO-La_(0.3)Ce_(0.7)O_(2-δ)研究 被引量:4
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作者 朱晓东 孙克宁 +3 位作者 张乃庆 陈新兵 付强 贾德昌 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2007年第5期824-826,共3页
NiO-La0.3Ce0.7O2-δ(LDC30) novel anode was investigated for IT-SOFCs(Intermediate Temperature-Solid Oxide Fuel Cells) with LaGaO3-based electrolyte. The results showed that LDC30 has a suitable chemical compatibility ... NiO-La0.3Ce0.7O2-δ(LDC30) novel anode was investigated for IT-SOFCs(Intermediate Temperature-Solid Oxide Fuel Cells) with LaGaO3-based electrolyte. The results showed that LDC30 has a suitable chemical compatibility with NiO and NiO-LDC30 has a good thermal expansion matching with LDC30 interlayer and LSGM(La0.8Sr0.2Ga0.8Mg0.2O3-δ) electrolyte, so NiO-LDC30/LDC30 was considered as a feasible and novel anode system. It was also shown that NiO content plays a key role on polarization performance and morphology of the anode. When the content of NiO was 60%(mass fraction), the polarization loss of anode was the lowest. Next we will optimize the porosity and sintering procedure to modify the microstructure and performance of the anode. 展开更多
关键词 NiO-La0.3Ce0.7O2-δ La0.8Sr0.2Ga0.8Mg0.2O3-δ 阻挡层 中温固体氧化物燃料电池
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掺Ga对锂离子电池正极材料LiCo_(0.3-x)Ga_xNi_(0.7)O_2的影响 被引量:1
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作者 童东革 赖琼钰 吉晓洋 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2005年第8期1488-1491,共4页
采用溶胶-凝胶法在0≤x≤0.5的范围内合成了LiCo0.3-xGaxNi0.7O2的单相.对样品进行了XRD、粒度、比表面积和充放电循环测试.随着掺Ga量的增加,LiCo0.3-xGaxNi0.7O2的放电容量增加.其中LiCo0.25Ga0.05Ni0.7O2在2.8~4.3V和0.2C时的首次... 采用溶胶-凝胶法在0≤x≤0.5的范围内合成了LiCo0.3-xGaxNi0.7O2的单相.对样品进行了XRD、粒度、比表面积和充放电循环测试.随着掺Ga量的增加,LiCo0.3-xGaxNi0.7O2的放电容量增加.其中LiCo0.25Ga0.05Ni0.7O2在2.8~4.3V和0.2C时的首次放电容量为177.5mA·h/g,经25次充放电循环后无容量衰减.LiCo0.25Ga0.05Ni0.7O2的放电容量随着放电倍率的增大而减小,随着充放电域压上限的增加而增大.但是材料的放电容量在高放电倍率下放电后仍可以完全恢复,且其循环性能与放电域压上限无关.此外,LiCo0.25Ga0.05Ni0.7O2在充放电循环中结构稳定,无相变发生. 展开更多
关键词 锂离子电池 正极材料 LiCo0.3-xGaxNi0.7O2 掺Ga
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AgGa_(0.7)In_(0.3)Se_2晶体热膨胀行为研究
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作者 吴莉姝 赵北君 +6 位作者 何知宇 陈宝军 朱世富 黄巍 杨登辉 沙铭宇 王文阳 《人工晶体学报》 EI CAS CSCD 北大核心 2015年第10期2685-2691,共7页
采用一种新的定向方法,快速定出了Ag Ga0.7In0.3Se2晶体c轴方向,制备得到[001]、[100]方向的块状样品;采用德国Bhr公司的Win TA 100热膨胀仪对其进行测试,分别获得了晶体沿c轴、a轴方向的热膨胀系数,分析了它们随温度变化的规律以及... 采用一种新的定向方法,快速定出了Ag Ga0.7In0.3Se2晶体c轴方向,制备得到[001]、[100]方向的块状样品;采用德国Bhr公司的Win TA 100热膨胀仪对其进行测试,分别获得了晶体沿c轴、a轴方向的热膨胀系数,分析了它们随温度变化的规律以及晶体出现反常热膨胀的机制;计算出晶体的体热膨胀系数和各向异性因子,分析讨论了晶体非轴向热膨胀系数在不同温度下随cos2φ的变化规律。 展开更多
关键词 AgGa0.7In0.3Se2 c轴定向 热膨胀
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A Novel Semiconductor CIGS Photovoltaic Material and Thin-Film ED Technology 被引量:10
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作者 ZHENG Guang fu 1,YANG Hong xing 1,MAN Cheuk ho 1,WONG Wing lok 2, AN Da wei 1 and John BURNETT 1(1 Centre for Development of Solar Energy Technology,Department of Building Services Engineering, The Hong Kong Polytechnic University,Hong Kong,C 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第11期1357-1363,共7页
In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly... In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly,the PV materials and technologies is investigated,then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported.These results shows that high quality CIGS polycrystalline thin films can be obtained by the ED method,in which the polycrystalline CIGS is definitely identified by the (112),(204,220) characteristic peaks of the tetragonal structure,the continuous CIGS thin film layers with particle average size of about 2μm of length and around 1 6μm of thickness.The thickness and solar grade quality of CIGS thin films can be produced with good repeatability.Discussion and analysis on the ED technique,CIGS energy band and sodium (Na) impurity properties,were also performed.The alloy CIGS exhibits not only increasing band gap with increasing x ,but also a change in material properties that is relevant to the device operation.The beneficial impurity Na originating from the low cost soda lime glass substrate becomes one prerequisite for high quality CIGS films.These novel material and technology are very useful for low cost high efficiency thin film solar cells and other devices. 展开更多
关键词 半导体光电材料 薄膜 ED技术
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Electronic Modeling and Optical Properties of CuIn<sub>0.5</sub>Ga<sub>0.5</sub>Se<sub>2</sub>Thin Film Solar Cell
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作者 Rongzhen Chen Clas Persson 《Journal of Applied Mathematics and Physics》 2014年第1期41-46,共6页
In this work, the band structure and optical-related properties of CuIn0.5Ga0.5Se2 thin film are presented. The calculation is performed by the full-potential linearized augmented plane wave (FPLAPW) method. The spin-... In this work, the band structure and optical-related properties of CuIn0.5Ga0.5Se2 thin film are presented. The calculation is performed by the full-potential linearized augmented plane wave (FPLAPW) method. The spin-orbit coupling is considered. The result for the dielectric function is in good agreement with earlier experimental measurements and simulations. Based on the complex dielectric function, the dielectric constant, the absorption coefficient, the complex refractive index and the reflectivity at normal incidence are explored. We found that they are comparable with the earlier results. 展开更多
关键词 Thin Film CuIn0.5Ga0.5Se2 Band Structure DIELECTRIC Function DIELECTRIC CONSTANT Absorption Coefficient Complex Refractive Index REFLECTIVITY SPIN-ORBIT Coupling
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放电等离子体烧结Cu(In_(0.7)Ga_(0.3))Se_2四元合金靶材的结构和导电性 被引量:1
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作者 谭志龙 冯海权 +5 位作者 张俊敏 王传军 闻明 管伟明 郭俊梅 李晨辉 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2017年第1期237-241,共5页
选用650℃下真空合成的Cu(In_(0.7)Ga_(0.3))Se_2单相合金粉末,通过放电等离子体烧结(SPS)法制备了CIGS合金靶材。研究了烧结温度、保温时间以及烧结压强等工艺参数对CIGS四元合金靶材的结构与性能的影响。研究表明,烧结温度为500℃以上... 选用650℃下真空合成的Cu(In_(0.7)Ga_(0.3))Se_2单相合金粉末,通过放电等离子体烧结(SPS)法制备了CIGS合金靶材。研究了烧结温度、保温时间以及烧结压强等工艺参数对CIGS四元合金靶材的结构与性能的影响。研究表明,烧结温度为500℃以上时,靶材为单一的Cu(In_(0.7)Ga_(0.3))Se_2相。随着烧结温度的升高,靶材的晶粒尺寸增大,致密度和电阻率基本呈线性升高;随着保温时间的延长,靶材晶粒尺寸增大,致密度和电阻率也随之升高;随着烧结压强的提高,靶材的致密度增加,而电阻率随之降低。综上所述,烧结温度为600℃,压强为30 MPa,保温时间为5 min的工艺条件下,制备靶材的电阻率为50Ω·cm,致密度为98%。 展开更多
关键词 Cu(In0.7Ga0.3)Se2 放电等离子体烧结(SPS) 致密度 电阻率
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Synthesis and characterization of gallium-based perovskitetype dense membrane with oxygen semipermeability
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作者 丛铀 邵宗平 +2 位作者 杨维慎 熊国兴 林励吾 《Science China Chemistry》 SCIE EI CAS 2001年第3期294-303,共10页
La0.15Sr0.85Ga0.3Fe0.7O3-δ(LSGFO) and La0.15Sr0.85Co0.3Fe0.7O3-δ(LSCFO) mixed oxygen-ion and electron conducting oxides were synthesized by using a combined EDTA and citrate complexing method, and the corresponding ... La0.15Sr0.85Ga0.3Fe0.7O3-δ(LSGFO) and La0.15Sr0.85Co0.3Fe0.7O3-δ(LSCFO) mixed oxygen-ion and electron conducting oxides were synthesized by using a combined EDTA and citrate complexing method, and the corresponding dense membranes were fabricated. The properties of the oxide powders and membranes were characterized with combined SEM, XRD, H2-TPR, O2-TPD techniques, mechanical strength and oxygen permeation measurement. The results showed that LSGFO had much higher thermochemical stability than LSCFO due to the higher valence stability of Ga3+. After the temperature-programmed reduction by 5% H2 in Ar from 20℃to 1020℃, the basic perovskite structure of LSGFO was successfully preserved. LSGFO also favors the oxygen vacancy formation better than LSCFO. Oxygen permeation measurement demonstrated that LSGFO had higher oxygen permeation flux than LSCFO, but they had similar activation energy for oxygen transportation, with a value of 110 and 117 kJ ?mol^(-1), respectively. The difference in oxygen permeation 展开更多
关键词 PEROVSKITE GA2O3 OXYGEN separation MEMBRANE La0.15Sr0.85 Ga0.3Fe0.7O3-δ La0.15Sr0.85Co0.3Fe0.7O3-δ.
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