A low cost spin coating route of fabricating CuInS2 polycrystalline thin films by reactive sintering method was put forward. The ink for spin coating was optimized by pre-reducing the precursor powders in hydrogen, wh...A low cost spin coating route of fabricating CuInS2 polycrystalline thin films by reactive sintering method was put forward. The ink for spin coating was optimized by pre-reducing the precursor powders in hydrogen, which turned the nanoparticle precursor powders from mixed sulfides into a mixture of CuInS2 and Cu-In metal alloys. The results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and Raman spectra showed that this optimization could highly improve the performance of CuInS2 polycrystalline thin films, including higher packing density, less impurity phases, and better quality. The energy gap of optimized CuInS2 thin film was determined to be about 1.45 eV by absorption spectroscopy measurement.展开更多
Polycrystalline CuInS2 （CIS） films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were invest...Polycrystalline CuInS2 （CIS） films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were investigated. During the sulphurization, the secondary CuxS phase segregated on the surface of the as-grown films. To improve the crystalline quality of CuInS2 films, a series of post-grown treatments, such as KCN-etching and vacuum annealing KCN-etched films, were performed on the as-grown films. Both as-grown and post-treated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicated that a CuxS secondary phase segregated on the surface of the as-grown film, which could be removed effectively by KCN etching. After the vacuum annealing treatment, the KCN-etched film had a sphalerite structure with （112） preferred orientation. Meanwhile, the crystalline quality of the CIS film was significantly improved, which provided a novel method to improve the performance of thin film solar cells.展开更多
The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature, current density, CuCl2 concen...The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature, current density, CuCl2 concentration, FeCl3 concentration, H2SeO3 concentration, TEA amount, pH value, and deposition time. The experiments were carried out according to an L18（2^13^7） table An X-ray diffractometer （XRD） and a scanning electron microscope （SEM） were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment. The results showed that the CuInSe2 phase was deposited with a preferred plane （112） parallel to the substrate surface. The optimum parameters are as follows： current density, 7 mA/cm^2; CuCl2 concentration, 10 mM; FeCl3 concentration, 50 mM; H2SeO3 concentration, 15 mM; TEA amount, 0 mL; pH value, 1.65; deposition time, 10 min; and annealing temperature, 500℃.展开更多
The Schottky diode (Al/p-CuInSe2/FTO) was fabricated by simple deposition of pure Aluminum on the front side of the CuInSe2 thin film. We have investigated its electrical characteristics by measuring the current-volta...The Schottky diode (Al/p-CuInSe2/FTO) was fabricated by simple deposition of pure Aluminum on the front side of the CuInSe2 thin film. We have investigated its electrical characteristics by measuring the current-voltage (I-V), the capacitance-voltage (C-V) and the electrical impedance in the range of temperature (300 K - 425 K). At room temperature, this heterostructure has shown non-ideal Schottky behavior with 3.98 as ideality factor and 38 μA/cm2 as a reverse saturated current density. The C-V measured at 100 kHz has shown non-linear behavior and an increase with temperature. Similarly, we have estimated, at room temperature, the carrier doping density, the built-in potential and the depletion layer width which are of about 8.66 × 1015 cm﹣3, 1.12 V and 0.37 μm respectively. By the impedance spectroscopy technique, we have found a decrease with temperature of all the serial resistance Rs, the parallel resistance Rp and the capacitance Cp. The frequency dependence of the imaginary part of this impedance was carried out to characterize the carrier transport properties in the heterostructure. From the Arrhenius diagram, we have estimated the activation energy at 460 meV. An equivalent electrical circuit was used for modeling these results.展开更多
CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (v...CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were characterized by X-ray diffractometry (XRD), scanning electron microscopy(SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. And the influence of pulse parameters on film quality was studied. The chalcopyrite phase CuInSe2 films with smooth surface and stoichiometric composition are obtained at a pulse potential from -0.65 to -0.7 V (vs SCE), a pulse period of 1-9 ms with a duty cycle of 33% and annealing treatment.展开更多
文摘A low cost spin coating route of fabricating CuInS2 polycrystalline thin films by reactive sintering method was put forward. The ink for spin coating was optimized by pre-reducing the precursor powders in hydrogen, which turned the nanoparticle precursor powders from mixed sulfides into a mixture of CuInS2 and Cu-In metal alloys. The results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and Raman spectra showed that this optimization could highly improve the performance of CuInS2 polycrystalline thin films, including higher packing density, less impurity phases, and better quality. The energy gap of optimized CuInS2 thin film was determined to be about 1.45 eV by absorption spectroscopy measurement.
基金the National High-Tech Research and Development Program of China (No. 2006AA03Z2370)
文摘Polycrystalline CuInS2 （CIS） films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were investigated. During the sulphurization, the secondary CuxS phase segregated on the surface of the as-grown films. To improve the crystalline quality of CuInS2 films, a series of post-grown treatments, such as KCN-etching and vacuum annealing KCN-etched films, were performed on the as-grown films. Both as-grown and post-treated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicated that a CuxS secondary phase segregated on the surface of the as-grown film, which could be removed effectively by KCN etching. After the vacuum annealing treatment, the KCN-etched film had a sphalerite structure with （112） preferred orientation. Meanwhile, the crystalline quality of the CIS film was significantly improved, which provided a novel method to improve the performance of thin film solar cells.
文摘The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature, current density, CuCl2 concentration, FeCl3 concentration, H2SeO3 concentration, TEA amount, pH value, and deposition time. The experiments were carried out according to an L18（2^13^7） table An X-ray diffractometer （XRD） and a scanning electron microscope （SEM） were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment. The results showed that the CuInSe2 phase was deposited with a preferred plane （112） parallel to the substrate surface. The optimum parameters are as follows： current density, 7 mA/cm^2; CuCl2 concentration, 10 mM; FeCl3 concentration, 50 mM; H2SeO3 concentration, 15 mM; TEA amount, 0 mL; pH value, 1.65; deposition time, 10 min; and annealing temperature, 500℃.
文摘The Schottky diode (Al/p-CuInSe2/FTO) was fabricated by simple deposition of pure Aluminum on the front side of the CuInSe2 thin film. We have investigated its electrical characteristics by measuring the current-voltage (I-V), the capacitance-voltage (C-V) and the electrical impedance in the range of temperature (300 K - 425 K). At room temperature, this heterostructure has shown non-ideal Schottky behavior with 3.98 as ideality factor and 38 μA/cm2 as a reverse saturated current density. The C-V measured at 100 kHz has shown non-linear behavior and an increase with temperature. Similarly, we have estimated, at room temperature, the carrier doping density, the built-in potential and the depletion layer width which are of about 8.66 × 1015 cm﹣3, 1.12 V and 0.37 μm respectively. By the impedance spectroscopy technique, we have found a decrease with temperature of all the serial resistance Rs, the parallel resistance Rp and the capacitance Cp. The frequency dependence of the imaginary part of this impedance was carried out to characterize the carrier transport properties in the heterostructure. From the Arrhenius diagram, we have estimated the activation energy at 460 meV. An equivalent electrical circuit was used for modeling these results.
基金Project(06FJ4059) supported by Hunan Provincial Academician Foundation
文摘CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were characterized by X-ray diffractometry (XRD), scanning electron microscopy(SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. And the influence of pulse parameters on film quality was studied. The chalcopyrite phase CuInSe2 films with smooth surface and stoichiometric composition are obtained at a pulse potential from -0.65 to -0.7 V (vs SCE), a pulse period of 1-9 ms with a duty cycle of 33% and annealing treatment.
