转光棚膜对‘翠碧1号’烟苗生长及养分积累的影响

为探究转光膜在南平烟区烟草育苗中的应用效果,以‘翠碧1号’为试验材料,设普通聚乙烯棚膜和转光棚膜2个试验处理,研究转光膜对育苗棚内光照、温度和烟苗生长、养分积累的影响。结果表明,转光膜可调节育苗棚内光照和温度,转光膜处理育苗棚内13:00和14:00的光合有效辐射强度和透光率低于普通膜,而15:00和16:00的光合有效辐射强度和透光率高于普通膜。通过分析育苗棚内温度日变化发现,转光膜处理育苗棚内白天(8:00—16:00)的温度低于普通膜处理,其他时间高于普通膜处理。转光膜促进烟株的生长,与普通膜相比,转光膜处理的根系总根长、根表面积、根系体积、分支数等指标和根系干重、总干重显著高于普通膜处理。转光膜显著影响了养分的吸收和积累,转光膜处理烟苗地上部氮含量、地下部钙含量、整株磷含量和铜含量显著高于普通膜处理,而地上部钙含量和镁含量低于普通膜处理;转光膜处理促进了烟苗氮磷钾的累积。转光膜通过调节育苗棚内的光强和温度,促进烟苗生长和养分吸收,提高烟苗干物质和养分积累量。

电容器用双向拉伸聚4-甲基-1-戊烯(BOPMP)薄膜开发与应用

聚4-甲基-1-戊烯(PMP)是一种具有等规结构的新型热塑性塑料,PMP为结晶性树脂,熔点在235℃~240℃之间,耐热性好,可在高温下使用,并具有卓越的电气绝缘和介电性能。与聚丙烯树脂相比,熔点高60℃,介电常数、介电损耗相近。随着我国电子工业的发展,PMP的用量在近年来有大幅的增长。目前世界上只有日本三井化学株式会社生产,由于产量有限、售价较高,限制了PMP在国内的应用。为此本文尝试采用双向拉伸的方法,试制聚4-甲基-1-戊烯(BOPMP)薄膜,并加工成金属化膜,试制电容器,最后对电容器的性能进行相应测试评价。采用不同牌号原料生产BOPMP薄膜,其电压击穿强度差别较大,不同频率下的BOPMP薄膜电容器损耗角正切值、介电常数均与BOPP薄膜电容器接近,但其高温下的性能有待进一步验证。如何提升BOPMP薄膜电压击穿强度及其耐热性,开发出适宜于双向拉伸的PMP粒子原料,生产出高质量的BOPMP电容薄膜,将是未来重点研究的方向。

不同聚乙烯膜厚度对1-甲基环丙烯处理的‘红丰’梨果实冷藏期间果实品质的影响

为延长‘红丰’梨采后贮藏保鲜期,提升果实贮藏品质,该试验采用不同厚度聚乙烯膜包装经0.4μL/L 1-甲基环丙烯(1-methylcyclopropene,1-MCP)保鲜剂处理后的‘红丰’梨果实,于冷藏期间测定果实相关指标,探索适宜聚乙烯膜包装厚度。结果表明,0.015 mm聚乙烯(polyethylene,PE)膜包装可有效维持果实硬度,延缓果皮转黄,延缓可溶性固形物和可滴定酸含量的增加,有效抑制总酚含量降低,降低果肉褐变指数,有效抑制丙二醛含量和相对电导率的增加,抑制多酚氧化酶活性,促进抗氧化关键酶活性。因此,0.015 mm PE膜包装可通过一定程度上维持细胞膜完整性,降低膜脂氧化程度,提高果实抗氧化能力从而延缓1-MCP处理果实衰老和果肉褐变。该试验为‘红丰’梨采后贮藏保鲜方式研究奠定了理论基础。

马铃薯闽薯1号在仙游县种植表现与地膜覆盖栽培技术

马铃薯闽薯1号系龙岩市农业科学研究所与福建省农业科学院作物研究所共同选育的鲜食型马铃薯品种。2021—2022年在仙游县稻后作示范种植,表现长势旺、产量高与商品性好等特点。根据闽薯1号在仙游县稻后作的表现,针对地膜覆盖栽培的特点,从整地、种薯处理、地膜覆盖、科学施肥、合理灌溉、中耕培土、绿色防控、防冻减灾与适时收获等方面总结了仙游县稻后马铃薯的栽培技术。

Energy Stabilities, Magnetic Properties, and Electronic Structures of Diluted Magnetic Semiconductor Zn1-xMnxS（001） Thin Films

We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.

Effect of concentration of cadmium sulfate solution on structural,optical and electric properties of Cd_(1-x)Zn_(x)S thin films

Cd_(1-x)Zn_(x)S thin films were deposited by chemical bath deposition(CBD)on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film.The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity.The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase,decrease,and increase with the increase of cadmium sulfate concentration.XRD studies exhibit the crystal structure of the film is the hexagonal phase,and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M.Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E_(g) can be expressed by the equation E_(g)(x)=0.59x^(2)+0.69x+2.43.Increasing the zinc content can increase the optical band gap,and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration,however,all of them have good transmittance.At a concentration of 0.005 M,the thin film has good absorbance in the 300-800 nm range,80%transmittance,and band gap value of 3.24 eV,which is suitable for use as a buffer layer for solar cells.

Composition-induced structural modifications in the quaternary CuIn1-xGaxSe2 thin films： bond properties versus Ga content

In this paper the dependence of structural properties of the quaternary CuIn1-xGaxSe2 films with tetragonal structure on the Ga content has been systematically investigated by Raman scattering and x-ray diffraction spectra. The shift of the dominant A1 mode, unlike the lattice constants, does not follow the linear Vegard law with increasing Ga content x, whereas exhibits approximately polynomial change from 174 cm^-1 for CuInSe2 to 185 cm^-1 for CuGaSe2. Such behaviour should be indicative of presence of the asymmetric distribution of Ga and In on a microscopic scale in the films, due to Ga addition. The changes in the tetragonal distortion η lead to a significant variation in the anion displacement parameter U, which should be responsible for the evolution of bond parameters and resultant Raman bands with x.

Preparation and Effect of Oxygen Annealing on the Electrical and Magnetic Properties of Epitaxial (0001) Zn_(1-x)Co_xO Thin Films

Epitaxial （0001）-oriented Zn1-xCoxO （x= 0.01, 0.05 and 0.1） thin films were grown on c-sapphire substrates by pulsed laser deposition. The XRD analysis, optical transmittance and XPS measurements revealed that the Co2＋ substituted Zn2＋ ions were incorporated into the lattice of ZnO in Zn1-xCoxO thin films. The electrical properties measurements revealed that the Co concentration had a non- monotonic influence on the electrical properties of the Zn1-xCoxO thin films due to the defects resulted from imperfections induced by Co substitution. The resistivity remarkably increased and the carrier concentration remarkably decreased in Zn1-x CoxO thin films after oxygen annealing at 600 ℃ under 15 Pa O2 pressure for 60 mins. Room-temperature ferromagnetic was observed and the ferromagnetic Co amount was smaller than the nominal Co concentration for Zn1-xCoxO samples before oxygen annealing. After oxygen annealing, the Zn1-x CoxO thin films exhibited paramagnetic behavior. It is suggested that the room-temperature ferromagnetic ofZn1-x CoxO thin films may attribute to defects or carriers induced mechanism.

X-ray Photoelectron Spectroscopy Studies of Ti_(x)Al_(1-x)N Thin Films Prepared by RF Reactive Magnetron Sputtering

TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the Nls core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p3/2 line between TiN and TixAl1-xN th77pj in film was 0.7 eV.

SYNTHESIS OF PERFLUORO-1-OCTANESULFONATED FULLERENE AND THE FRICTION PROPERTIES OF ITS THIN FILM

A star-shaped compound of perfluoro-1-octanesulfonated fullerene was synthesized. The measurement of the friction for its spin-coating film by friction force microscopy (FFM) reveals that the films possess lower friction force compared to that of the star-shaped C-60-polystyrene films.

Optical study of Ba(Mn_xTi_(1-x)O_3) thin films by spectroscopic ellipsometry

Stoichiometric Ba（MnxTi（1-x）O3） （BMT） thin films with various values of x were deposited on Si（111） substrates by the sol-gel technique. The influence of Mn content on the optical properties was studied by spectroscopic ellipsometry （SE） in the UV–Vis–NIR region. By fitting the measured ellipsometric parameter （Ψ and Δ） with a four-phase model （air/BMT＋voids/BMT/Si（111））, the key optical constants of the thin films have been obtained. It was found that the refractive index n and the extinction coefficient k increase with increasing Mn content due to the increase in the packing density. Furthermore, a strong dependence of the optical band gap Eg on Mn/Ti ratios in the deposited films was observed, and it was inferred that the energy level of conduction bands decreases with increasing Mn content.

Preparation of Y_(1-x)Ho_xBa_2Cu_3O_(7-δ) Superconductive Thin Films

Y_(1-x)Ho_xBa_2Cu_3O_(7-δ)(0<x<1) sinsle crystal thin films oriented with the caxis perpendicular to the sur-face were grown by DC magnetron sputtering technique. Target was pieced together with half of YBa_2Cu_3O_(7-δ)(YBCO) and half of HoBa_2Cu_3O_(7-δ)(HBCO) superconducting materials. As the distance between HBCO targetmaterial and substrate is varied , the Ho content in material is changed respectively. When the content of Ho is0. 7 (atom ratio) , the T_c>83K.

Fe含量对CuNi10FeMn1合金组织与性能的影响

研究Fe含量(1.05%~2.44%,质量分数)对CuNi10FeMn1合金组织、微观偏析、耐海水冲刷腐蚀性能和力学性能的影响,采用SEM、能谱和XPS等手段分析合金的腐蚀产物膜。结果表明:CuNi10FeMn1合金中Ni、Fe元素易于富集在枝晶干,Mn元素易于富集在枝晶间;随着Fe含量的增加,合金组织明显细化,α固溶体中的Fe含量增加;当Fe含量从1.05%增大至1.80%时,Ni、Fe元素的偏析比分别由0.49和0.45增大到0.77和0.61,偏析程度下降;当Fe含量继续增大时,Ni、Fe元素的偏析比则下降为0.62~0.65和0.49~0.51,偏析程度也随之增加。随着Fe含量的增加,合金的腐蚀速率呈先减小后增大的趋势,当Fe含量为1.80%时,合金腐蚀速率最小,表面形成致密的、缺陷较少的富Fe、Ni的腐蚀产物膜,对基体的保护作用增强,是其具有良好耐海水冲刷腐蚀性能的主要原因。随着Fe含量的增加,CuNi10FeMn1合金的抗拉强度和屈服强度由Fe含量为1.05%时的245和90MPa分别增大到Fe含量为2.44%时的303和151MPa,而断后伸长率由39.2%下降到32.8%。

The transverse laser induced thermoelectric voltages in step flow growth (1-x)Pb(Mg_(1/3)Nb_(2/3))O_(3-x)PbTiO_3 thin films

This paper reports that the transverse laser induced thermoelectric voltages （LITV） axe observed for the first time in the step flow growth （1- x）PD（Mg1/3Nb2/3）O3-xPbTiO3 （PMN-PT, x = 0.20, 0.33, 0.50） thin films deposited on vicinal-cut strontium titanate single crystal substrates. Because lead magnesium niobate-lead titanate is a solid solution of lead magnesium niobate （PMN） and lead titanate （PT）, there are two types of signals. One is wide with a time response of a microsecond, and the other superimposed with the wide signal is narrow with a time response of a nanosecond. The transverse LITV signals depend on the ratio of PMN to PT drastically. Under the irradiation of 28-ns pulsed KrF excimer laser with the 248-nm wavelength, the largest induced voltage is observed in the 0.50Pb（Mg1/3Nb2/3）O3-0.50 PbTiO3 films. Moreover, the effects of film thickness, substrates, and tilt angles of substrates are also investigated.

Growth and transport features of electron-doped superconductor Pr_(1-x)LaCe_xCuO_(4-δ) thin films

Tt-phase electron-doped superconductor Pr1-xLaCexCuO4-δ（PLCCO） thin films are successfully prepared on SrTiOs （100） substrates by using the dc magnetron sputtering method. It is found that the films each have a highly oriented structure along the c-axis. For optimally doped films with x ≈ 0.10, the superconducting transition temperature Tc is 25.5 K, which is similar to that of a single crystal. The quadratic temperature dependence of the resistivity is observed when T 〉 To, which can be attributed to the two-dimensional Fermi liquid behaviour. Besides, the optimal conditions for preparing the T1-phase PLCCO thin films are also discussed in detail.

Polycrystalline ZnSx Se1—x thin films deposited on ITO glass by MBE

MBE growth of ZnS_xSe_1-x thin films on ITO coated glass substrate s were carried o ut using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these films indicated that the as-gro wn polycrystalline ZnS_xSe_1-x thin films had a preferred orientat ion along the (1 11) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD laye r peaks showed strong growth temperature dependence, with the optimized temperat ure being about 290℃. Both AFM and TEM measurements of these thin films also in dicated a similar growth temperature dependence. High quality ZnS_xSe_1- x thin fil m grown at the optimized temperature had the smoothest surface with lowest RMS v alue of 1.2 nm and TEM cross-sectional micrograph showing a well defined column ar structure.

Effects of Annealing Processes on CuxSi(1-x) Thin Films

The CuxSi（1-x） thin films have been grown by pulsed laser deposition（PLD） with in situ annealing on Si（001） and Si（111）,respectively.The transformation of phase was detected by X-ray diffraction（XRD）.The results showed that the as-deposited films were composed of Cu on both Si（001） and Si（111）.The annealed thin films consisted of Cu ＋η ＂-Cu3Si on Si（001） while Cu ＋η＇-Cu3Si on Si（111）,respectively,at annealed temperature（Ta）= 300-600℃.With the further increasing of Ta,at Ta= 700℃,there was only one main phase,η＂-Cu3Si on Si（001） while η＇-Cu3Si on Si（111）,respectively.The annealed thin films transformed from continuous dense structure to scattered-grain morphology with increasing Ta detected by field emission scanning electron microscope（FESEM）.It was also showed that the grain size would enlarge with increasing annealing time（ta）.

Influence of Iodine Pressure on the Growth of CuIn_1-xGa_xSe₂Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”

We present the results concerning photovoltaic materials CuIn1-xGaxSe2 thin films, which were obtained by close-spaced vapor transport “CSVT”. The influence of the iodine pressure on the growth of CuIn1-xGaxSe2 thin films was studied. The thin films were characterized by Energy Dispersive Spectrometry (EDS), Scanning Electron Microscope (SEM), hot point probe method, X-Ray Diffraction (XRD), Photoluminescence, and Optical response (Photoconductivity). At high pressure, the deposition rate was very important. The films were relatively thick and homogeneous with large grains dimensions. These films are formed of crystals placed in a preferential orientation depending on the plan (112). At low pressure, the films were thin and inhomogeneous with relatively small grains. These films of crystals didn’t have preferential orientation.

Optoelectronic Characterization of Chemical Bath Deposited Cd_xCo_1-xS Thin Film

Cadmium Cobalt Sulphide (CdxCo1-xS) thin film was deposited on microscopic glass substrate using chemical bath deposition technique at room temperature from aqueous solutions of Cadmium Chloride, Cobalt Chloride and Thiourea in which ammonium solution was used as complexing agents. The optical properties were characterized using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200 - 1000 nm. We report the deposition and optimization of the growth parameter with respect to time which showed that the band gap energy and the composition verified from the extended Vegard’s law are highly dependent on deposition time. The average transmittance of the film in VIS-NIR region ranges between 30% and 78% with absorbance range of 0.15 - 0.47 within the same wavelength range. The film was also observed to exhibit poor reflectance (11 x = 0.75;0.83 and 0.94), respectively. Other optical and dielectric properties of the films were also characterized. Based on the exhibited properties of the film, it can be concluded that it is a promising material for selective coatings for solar cells;effective coatings for poultry houses;use as antireflective coating materials, and for fabrication of optoelectronic devices.

PBAT/PLA复合膜结合1-MCP处理对金玉兰菜保鲜效果的影响

为研究金玉兰菜新型可降解保鲜包装及保鲜新技术,以聚苯乙烯(expanded polystyrene,EPS)泡沫箱包装作为对照,采用聚己二酸/对苯二甲酸丁二醇酯/聚乳酸[poly(butyleneadipate-co-terephthalate)/polylactic acid,PBAT/PLA]复合膜包装结合1.0μL/L 1-甲基环丙烯(1-methylcyclopropene,1-MCP)对金玉兰菜进行处理,分析测定贮藏期间[(4.0±0.5)℃],金玉兰菜呼吸强度、色差、总酚含量、多酚氧化酶活性、营养物质含量等指标的变化。结果表明,采用PBAT/PLA复合膜包装的金玉兰菜在贮藏24 d后,硬度仍保持了1.98 kg/cm^(2),感官评分平均值维持在3.425,高于对照组(1.15);PBAT/PLA+1-MCP能够延迟呼吸高峰的出现时间,并降低呼吸峰值10.72 mg CO_(2)/(kg·h),褐变指数较未添加1-MCP的处理组降低了2.3~5.7,有效抑制了营养物质的损耗。PBAT/PLA复合膜结合1-MCP处理能够有效提高金玉兰菜冷藏过程中的品质,在拓宽可降解包装材料在农产品保鲜中的应用及提高金玉兰菜保鲜技术水平方面具有潜在应用前景。