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Effects of Annealing Processes on CuxSi(1-x) Thin Films
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作者 章嵩 WU Jun +3 位作者 HE Zhiqiang 涂溶 SHI Ji ZHANG Lianmeng 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2016年第1期31-34,共4页
The CuxSi(1-x) thin films have been grown by pulsed laser deposition(PLD) with in situ annealing on Si(001) and Si(111),respectively.The transformation of phase was detected by X-ray diffraction(XRD).The res... The CuxSi(1-x) thin films have been grown by pulsed laser deposition(PLD) with in situ annealing on Si(001) and Si(111),respectively.The transformation of phase was detected by X-ray diffraction(XRD).The results showed that the as-deposited films were composed of Cu on both Si(001) and Si(111).The annealed thin films consisted of Cu +η "-Cu3Si on Si(001) while Cu +η'-Cu3Si on Si(111),respectively,at annealed temperature(Ta)= 300-600℃.With the further increasing of Ta,at Ta= 700℃,there was only one main phase,η"-Cu3Si on Si(001) while η'-Cu3Si on Si(111),respectively.The annealed thin films transformed from continuous dense structure to scattered-grain morphology with increasing Ta detected by field emission scanning electron microscope(FESEM).It was also showed that the grain size would enlarge with increasing annealing time(ta). 展开更多
关键词 cuxsi1-x thin films pld phase surface morphology
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