A resistivity distribution with a space of 3mm between test points was measured on a slice-of-silicon monocrystal （diameter 75mm） using an inclined four-point probe. This paper has determined the number of resistivi...A resistivity distribution with a space of 3mm between test points was measured on a slice-of-silicon monocrystal （diameter 75mm） using an inclined four-point probe. This paper has determined the number of resistivity divisions and their separations by statistical methods and introduced fuzzy mathematics to place the data into different fuzzy sets, after choosing the exponent function as a membership function for fuzzy sets and suitable values of thresholds. One fuzzy set corresponds to one resistivity isocontour. Then,the resistivity isocontours can be drawn with a definite separation and fi- nally shown in a map with MATLAB. The deviation of resistivity data on an isocontour is small and there are few residual test points without connections. So, the connection of the isocontours are high-quality and useful in application for instructing practical production.展开更多
A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an ...A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an atomic scale. The results show that when the cutting edge radius decreases in the nanometric grinding process with the same cut-depth and grinding speed, the depth of the damage layers and the potential energy between the silicon atoms decrease too. Also, when the cut depth increases, both the depth of the damage layers and the potential energy between silicon atoms increase. When the grinding speed is between 20 and 200m/s,the depth of the damage layers does not change much with the increase of the grinding speed under the same cutting edge radius and cut depth conditions. This means that the MD simulation is not sensitive to changes in the grinding speed, and thus increasing the grinding speed properly can shorten the sion,the subsurface damage of monocrystal silicon is silicon atoms, which is verified by the ultra-precision simulation time and enlarge the simulation scale. In conclumainly based on the change of the potential energy between grinding and CMP experiments.展开更多
Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively, analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According to ...Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively, analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According to the theory for kinetics of reaction of vapour with solid phase a nitridation kinetic model, from which it can be shown thal the rate of nitridation reaction of silicon crystal should be controlled by three stage limiting factors, was proposed. These limiting factors are chemical reaction, chemical reaction mixed with diffusion and diffu- sion. Using this model to treat our experimental data, satisfactory correlation coefficient and apparent activation energy of nitridation of p-type (lll) silicon crystal have been obtained. The nitride film was identi' fied to be a-Si_3N_4 (Hexagonal, a=0.7758nm,c_o=0.5623nm) by X-ray diffraction analysis. Morphology of the nitride films formed in different nitridation duration was observed in both planar andcross-sectional views by SEM (scanning electron microscope).展开更多
1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for ox...1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve展开更多
General Research Institute for Nonferrous Metals (GRINM) obtained firstly in China aф76 mm, 180 mm-long, 4.5 kg GaAs crystal with a ± 3 mm deviation for diameter. At present thistechnique is introducing a crysta...General Research Institute for Nonferrous Metals (GRINM) obtained firstly in China aф76 mm, 180 mm-long, 4.5 kg GaAs crystal with a ± 3 mm deviation for diameter. At present thistechnique is introducing a crystal growth process in batches.展开更多
We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor （CMOS） microelectromechanical system ...We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor （CMOS） microelectromechanical system （MEMS） process. The metal interconnection of the device is fabricated by a 0.5 μm standard CMOS process on 8-inch silicon wafer. Then, a SiO2-Si low-temperature fusion bonding is developed to bond the CMOS wafer and the MEMS wafer, with the electrical connection realized by the tungsten through silicon via process. Wafer- level A1Ge euteetic bonding is adopted to package the Pirani gauge in a non-hermetic cavity to protect the gauge from being damaged or contaminated in the dicing and assembling process, and to make it suitable for actual applications. To increase the accuracy of the test and restrain negative influence of temperature drift, the Wheatstone bridge structure is introduced. The test results show that before capping, the gauge has an average sensitivity of 1.04 × 104 K.W-1Torr-1 in dynamic range of 0.01 20 Torr. After capping, the sensitivity of the gauge does not decrease but increases to 1.12 × 104 K.W-1 Torr-1.展开更多
The isovalent element Ge doped into CZ-Si can effectively suppress the forming rate of oxygen donors andreduce their maximal concentration. The mechanical strength of silicon wafers can be increased by this proce-dure...The isovalent element Ge doped into CZ-Si can effectively suppress the forming rate of oxygen donors andreduce their maximal concentration. The mechanical strength of silicon wafers can be increased by this proce-dure. The mechanism of above phenomena has been discussed.展开更多
This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron （1.5 MeV） at 360 K.Two groups of samples with low [Oi] = 6.9 x 10^17 cm^-3 and high [O...This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron （1.5 MeV） at 360 K.Two groups of samples with low [Oi] = 6.9 x 10^17 cm^-3 and high [Oi] = 1.06 x 10^18 cm^-3 were used.We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen,it is hardly changed in the higher concentration of oxygen specimen.It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at 500 ℃,accompanied with the appearing of VO3. For both kinds of specimens,the concentration of VO3 reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃.展开更多
本文利用原子级扫描透射电子显微术(scanning transmission electron microscopy,STEM)研究了PtS_(2)在连续Ar等离子体作用下其表面S原子不断缺失并导致相转变的过程。实验发现随着S原子占比的减小,层状1T相PtS_(2)以逐层非晶化的方式...本文利用原子级扫描透射电子显微术(scanning transmission electron microscopy,STEM)研究了PtS_(2)在连续Ar等离子体作用下其表面S原子不断缺失并导致相转变的过程。实验发现随着S原子占比的减小,层状1T相PtS_(2)以逐层非晶化的方式转变为无定形非晶相PtS_(x)(x<2),并且基于径向分布函数(radial distribution function,RDF)分析定量提取了最邻近Pt-Pt、Pt-S、S-S原子对的分布概率。随着S原子占比的继续减小,表面非晶相PtSx最终转变为单晶Pt,结合电子能量损失谱(electron energy loss spectroscopy,EELS)与STEM原子序数衬度图像分析表明,Pt原子以(111)面心立方密堆的方式堆垛,形成少层甚至单层Pt晶畴。展开更多
文摘A resistivity distribution with a space of 3mm between test points was measured on a slice-of-silicon monocrystal （diameter 75mm） using an inclined four-point probe. This paper has determined the number of resistivity divisions and their separations by statistical methods and introduced fuzzy mathematics to place the data into different fuzzy sets, after choosing the exponent function as a membership function for fuzzy sets and suitable values of thresholds. One fuzzy set corresponds to one resistivity isocontour. Then,the resistivity isocontours can be drawn with a definite separation and fi- nally shown in a map with MATLAB. The deviation of resistivity data on an isocontour is small and there are few residual test points without connections. So, the connection of the isocontours are high-quality and useful in application for instructing practical production.
文摘A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an atomic scale. The results show that when the cutting edge radius decreases in the nanometric grinding process with the same cut-depth and grinding speed, the depth of the damage layers and the potential energy between the silicon atoms decrease too. Also, when the cut depth increases, both the depth of the damage layers and the potential energy between silicon atoms increase. When the grinding speed is between 20 and 200m/s,the depth of the damage layers does not change much with the increase of the grinding speed under the same cutting edge radius and cut depth conditions. This means that the MD simulation is not sensitive to changes in the grinding speed, and thus increasing the grinding speed properly can shorten the sion,the subsurface damage of monocrystal silicon is silicon atoms, which is verified by the ultra-precision simulation time and enlarge the simulation scale. In conclumainly based on the change of the potential energy between grinding and CMP experiments.
文摘Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively, analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According to the theory for kinetics of reaction of vapour with solid phase a nitridation kinetic model, from which it can be shown thal the rate of nitridation reaction of silicon crystal should be controlled by three stage limiting factors, was proposed. These limiting factors are chemical reaction, chemical reaction mixed with diffusion and diffu- sion. Using this model to treat our experimental data, satisfactory correlation coefficient and apparent activation energy of nitridation of p-type (lll) silicon crystal have been obtained. The nitride film was identi' fied to be a-Si_3N_4 (Hexagonal, a=0.7758nm,c_o=0.5623nm) by X-ray diffraction analysis. Morphology of the nitride films formed in different nitridation duration was observed in both planar andcross-sectional views by SEM (scanning electron microscope).
文摘1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve
文摘General Research Institute for Nonferrous Metals (GRINM) obtained firstly in China aф76 mm, 180 mm-long, 4.5 kg GaAs crystal with a ± 3 mm deviation for diameter. At present thistechnique is introducing a crystal growth process in batches.
基金Supported by the National High Technology Research and Development Program of China under Grant No 2015AA042602
文摘We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor （CMOS） microelectromechanical system （MEMS） process. The metal interconnection of the device is fabricated by a 0.5 μm standard CMOS process on 8-inch silicon wafer. Then, a SiO2-Si low-temperature fusion bonding is developed to bond the CMOS wafer and the MEMS wafer, with the electrical connection realized by the tungsten through silicon via process. Wafer- level A1Ge euteetic bonding is adopted to package the Pirani gauge in a non-hermetic cavity to protect the gauge from being damaged or contaminated in the dicing and assembling process, and to make it suitable for actual applications. To increase the accuracy of the test and restrain negative influence of temperature drift, the Wheatstone bridge structure is introduced. The test results show that before capping, the gauge has an average sensitivity of 1.04 × 104 K.W-1Torr-1 in dynamic range of 0.01 20 Torr. After capping, the sensitivity of the gauge does not decrease but increases to 1.12 × 104 K.W-1 Torr-1.
文摘The isovalent element Ge doped into CZ-Si can effectively suppress the forming rate of oxygen donors andreduce their maximal concentration. The mechanical strength of silicon wafers can be increased by this proce-dure. The mechanism of above phenomena has been discussed.
基金Project supported by the National Natural Science Foundation of China (Grant No 50872028)Natural Science Foundation of Hebei Province of China (Grant Nos E200500048 and E2008000079)Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20050080006)
文摘This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron （1.5 MeV） at 360 K.Two groups of samples with low [Oi] = 6.9 x 10^17 cm^-3 and high [Oi] = 1.06 x 10^18 cm^-3 were used.We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen,it is hardly changed in the higher concentration of oxygen specimen.It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at 500 ℃,accompanied with the appearing of VO3. For both kinds of specimens,the concentration of VO3 reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃.
文摘本文利用原子级扫描透射电子显微术(scanning transmission electron microscopy,STEM)研究了PtS_(2)在连续Ar等离子体作用下其表面S原子不断缺失并导致相转变的过程。实验发现随着S原子占比的减小,层状1T相PtS_(2)以逐层非晶化的方式转变为无定形非晶相PtS_(x)(x<2),并且基于径向分布函数(radial distribution function,RDF)分析定量提取了最邻近Pt-Pt、Pt-S、S-S原子对的分布概率。随着S原子占比的继续减小,表面非晶相PtSx最终转变为单晶Pt,结合电子能量损失谱(electron energy loss spectroscopy,EELS)与STEM原子序数衬度图像分析表明,Pt原子以(111)面心立方密堆的方式堆垛,形成少层甚至单层Pt晶畴。
