Single-crystalline silicon materials with large dimensions have been widely used as assemblies in plasma silicon etching machines.However,information about large-diameter low-cost preparation technology has not been s...Single-crystalline silicon materials with large dimensions have been widely used as assemblies in plasma silicon etching machines.However,information about large-diameter low-cost preparation technology has not been sufficiently reported.In this paper,it was focused on the preparation of 400-mm silicon（100） crystal lightly doped with boron from 28-in.hot zones.Resistivity uniformity and oxygen concentration of the silicon crystal were investigated by direct-current（DC） four-point probes method and Fourier transform infrared spectroscopy（FTIR）,respectively.The global heat transfer,melt flow and oxygen distribution were calculated by finite element method（FEM）.The results show that 28-in.hot zones can replace conventional 32 in.ones to grow 400-mm-diameter silicon single crystals.The change in crucible diameter can save energy,reduce cost and improve efficiency.The trend of oxygen distribution obtained in calculations is in good agreement with experimental values.The present model can well predict the 400-mm-diameter silicon crystal growth and is essential for the optimization of furnace design and process condition.展开更多
p -type CZ silicon crystals annealed at 450℃ have been investigated by low temperature infrared spectroscopy with high resolusion. It has been shown that the 2p± and 3p± bands of neutral thermal donors TD~&...p -type CZ silicon crystals annealed at 450℃ have been investigated by low temperature infrared spectroscopy with high resolusion. It has been shown that the 2p± and 3p± bands of neutral thermal donors TD~° are all split into two bands, which have not been reported before. In addition, the concentrations ofindi- vidual TD_i and total TD have been derived from the heights of 2po bands, and the boron concentrations de- rived from that of 320 cm^(-1) band. The room temperature resistivities of samples have been evaluated and the comparison with practically measured resistivities have been made.展开更多
A global analysis of heat transfer and fluid flow in a real Czochralski single silicon crystal furnace is developed using the FLUENT package.Good agreement was obtained for comparisons of the power and crystal growth ...A global analysis of heat transfer and fluid flow in a real Czochralski single silicon crystal furnace is developed using the FLUENT package.Good agreement was obtained for comparisons of the power and crystal growth speed between the simulation and experimental data,and the effect of the length of the crystal on heat transfer and fluid flow was analyzed.The results showed that T_（max） increases and its location moves downward as the crystal length increases.The flow pattern in the melt does not change until the crystal grows to 900 mm.As the crystal length increases,the flow pattern in the first gas area only changes when the crystal length is less than 700 mm,but the flow pattern in the second area changes throughout the growth process.展开更多
通过使用基于非正交网格有限体积法的FLUTRAPP(fluid flow and transport phenomena program)程序模拟了工业8in单晶硅提拉法生长过程,数值模拟结果表明,流场及提拉速率在单晶硅生长过程中具有振荡特性,提拉速率的振荡周期大约为2 min,...通过使用基于非正交网格有限体积法的FLUTRAPP(fluid flow and transport phenomena program)程序模拟了工业8in单晶硅提拉法生长过程,数值模拟结果表明,流场及提拉速率在单晶硅生长过程中具有振荡特性,提拉速率的振荡周期大约为2 min,尖形磁场的引入能够抑制坩埚中熔体流动的振荡,减小提拉速率的振幅,从而有利于提高所生长单晶的质量.展开更多
基金financially supported by the Major National Science and Technology Projects(No.2008ZX02401)
文摘Single-crystalline silicon materials with large dimensions have been widely used as assemblies in plasma silicon etching machines.However,information about large-diameter low-cost preparation technology has not been sufficiently reported.In this paper,it was focused on the preparation of 400-mm silicon（100） crystal lightly doped with boron from 28-in.hot zones.Resistivity uniformity and oxygen concentration of the silicon crystal were investigated by direct-current（DC） four-point probes method and Fourier transform infrared spectroscopy（FTIR）,respectively.The global heat transfer,melt flow and oxygen distribution were calculated by finite element method（FEM）.The results show that 28-in.hot zones can replace conventional 32 in.ones to grow 400-mm-diameter silicon single crystals.The change in crucible diameter can save energy,reduce cost and improve efficiency.The trend of oxygen distribution obtained in calculations is in good agreement with experimental values.The present model can well predict the 400-mm-diameter silicon crystal growth and is essential for the optimization of furnace design and process condition.
文摘p -type CZ silicon crystals annealed at 450℃ have been investigated by low temperature infrared spectroscopy with high resolusion. It has been shown that the 2p± and 3p± bands of neutral thermal donors TD~° are all split into two bands, which have not been reported before. In addition, the concentrations ofindi- vidual TD_i and total TD have been derived from the heights of 2po bands, and the boron concentrations de- rived from that of 320 cm^(-1) band. The room temperature resistivities of samples have been evaluated and the comparison with practically measured resistivities have been made.
基金supported by the Jiangsu Zhongli PV Technology Co.,Ltd
文摘A global analysis of heat transfer and fluid flow in a real Czochralski single silicon crystal furnace is developed using the FLUENT package.Good agreement was obtained for comparisons of the power and crystal growth speed between the simulation and experimental data,and the effect of the length of the crystal on heat transfer and fluid flow was analyzed.The results showed that T_（max） increases and its location moves downward as the crystal length increases.The flow pattern in the melt does not change until the crystal grows to 900 mm.As the crystal length increases,the flow pattern in the first gas area only changes when the crystal length is less than 700 mm,but the flow pattern in the second area changes throughout the growth process.
文摘通过使用基于非正交网格有限体积法的FLUTRAPP(fluid flow and transport phenomena program)程序模拟了工业8in单晶硅提拉法生长过程,数值模拟结果表明,流场及提拉速率在单晶硅生长过程中具有振荡特性,提拉速率的振荡周期大约为2 min,尖形磁场的引入能够抑制坩埚中熔体流动的振荡,减小提拉速率的振幅,从而有利于提高所生长单晶的质量.
