γ-LiAlO_2 Single Crystal Grown by Czochralski Technique and Modified by Vapor Transport Equilibration (VTE) Technique

Large-sized （～2 inch, 50.8 mm） γ-LiAlO2 single crystal has been grown by conventional Czochralski （Cz） method, but the crystal has a milky, dendriform center. The samples taken from transparent and milky parts were ground and examined by X-ray diffraction. All diffraction peaks could be indexed in γ-LiAlO2. The crystal quality was characterized by X-ray rocking curve. The full-width at half-maximum （FWHM） values are 116.9 and 132.0 arcsec for transparent and milky parts, respectively. The vapor transport equilibrium （VTE） technique was introduced to modify the crystal quality. After 1000℃/48 h, 1100℃/48 h, 1200℃/48 h VTE processes, the FWHM values dropped to 44.2 and 55.2 arcsec for transparent and milky part, respectively. The optical transmission of transparent part was greatly enhanced from 85% to 90%, and transmission of milky part from 75% to 80% in the range of 190~1900 nm at room temperature. When the VTE temperature was raised to 1300℃, the sample cracked and FWHM values of transparent and milky parts were increased to 55.2 and 80.9 arcsec, respectively. By combining Cz technique with VTE technique, large-sized and high quality γ-LiAlO2 crystal can be obtained.

Growth and Spectroscopic Characteristics of Yb^3+:LiGd(WO_4)_2 Crystal

The Yb3＋：LiGd（WO4）2 crystal with the dimension of Ф15×35 mm3 was grown by Czochralski technique. The spectroscopic characterization and fluorescence dynamics of Yb3＋ in yb3＋：LiGd（WO4）2 crystal were investigated. The yb3＋：LiGd（WO4）2 crystal exhibits a broad absorption band centered near 975 nm with the linewidths of 16 and 11 nm and maximal absorption cross-section of 3.60 × 10-20 and 2.90× 10-20 cm2 for π- and σ-polarization, respectively. The emission broadband has an FWHM of 47 and 45 nm with the emission cross sections of 3.92 × 10-20 and 3.34× 10-2o cm2 at 1020 nm for re- and or-polarization, respectively. The measured fluorescence lifetime is 398 gs. The blue light emission around 480 nm through cooperative upconversion from the de-excitation of excited Yb3＋-Yb3＋ pairs at 4 K was observed under 932-nm excitation and demonstrated.

Grown-in Defects of InSb Crystals:Models and Computation

In this paper,we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski(CZ)technique.Our model is similar to the ones used for silicon crystal,which includes the Fickian diffusion and a recombina-tion mechanism.This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals.The temperature solution and the advance of the melt-crystal interface,which determines the time-dependent domain of the model,are based on a recently derived perturbation model.We propose a finite difference method which takes into account the moving interface.We study the effect of thermal flux on the point defect patterns during and at the end of the growth process.Our results show that the concentration of excessive point defects is positively correlated to the heat flux in the system.