Deposition of SiO_x on Metal Surface with a DBD Plasma Gun at Atmospheric Pressure for Corrosion Prevention

In this study, SiOx films were deposited by a dielectric barrier discharge （DBD） plasma gun at an atmospheric pressure. The relationship of the film structures with plasma powers was investigated by Fourier transform infrared spectroscopy （FTIR）, and scanning electron microscope （SEM）. It was shown that an uniform and cross-linking structure film was formed by the DBD gun. As an application, the SiOx films were deposited on a carbon steel surface for the anti-corrosion purpose. The experiment was carried out in a 0.1 M NaCl solution. It was found that a very good anti-corrosive property was obtained, i.e., the corrosion rate was decreased c.a. 15 times in 5% NaCl solution compared to the non-SiOx coated steel, as detected by the potentiodynamic polarization measurement.

DBD等离子体枪聚合SiOx薄膜用于金属表面防腐性能研究

用高频介质阻挡放电(DBD)等离子体枪,以六甲基二硅氧烷为单体,在大气下于铸铁表面聚合S iOx薄膜。采用红外光谱(FTIR)分析了等离子体功率对聚合膜的结构和沉积速度等影响、SEM对试样表面进行观察。实验发现铸铁表面沉积S iOx薄膜呈现致密纳米棒状交联结构,并随着厚度的增加粒子间出现团聚现象。在0.5%NaC l溶液中的腐蚀实验表明,S iOx薄膜能显著的提高铸铁的防腐性能,而通过在5%NaC l溶液中进行的动电位极化特性曲线计算得到,铸铁的腐蚀速率为4.72E-3mm/a,约为纯铸铁的1/15。

大气压聚合SiOx薄膜用于新型印刷板材的研究

以六甲基二硅氧烷(HMDSO)为单体,采用DBD等离子体枪在大气环境下进行聚合物合成,对2种不同进样方式的放电特性、聚合效果作了比较,发现2种进样方式的放电特性相同,唯一不同在于等离子体区下游进样放电等离子体炬长在低流量时先增大后减小,而等离子体区直接进样方式放电炬长直接达到起弧最大值。FTIR显示单体不同的输入方式对聚合膜结构影响不大,但对聚合膜的沉积速度有明显的影响,单体输入到等离子体区下游成膜速度明显快于单体直接进入等离子体区。扫描电子显微镜(SEM)给出了聚合膜的表面形态,表面能测试显示其接触角可达110度,推墨实验表明等离子体下游区进样聚合膜斥墨性好,可做无水胶印板材。