<strong>Objective:</strong> To analyze the effects of chemotherapy on peripheral blood DC cells and related immune cytokines (NKG2D, DC cells, TNF-a, IFN-r, HMGB-1) in patients with non-small cell lung can...<strong>Objective:</strong> To analyze the effects of chemotherapy on peripheral blood DC cells and related immune cytokines (NKG2D, DC cells, TNF-a, IFN-r, HMGB-1) in patients with non-small cell lung cancer (NSCLC). <strong>Methods:</strong> Ninety-five NSCLC patients who attended the Oncology Department of the Affiliated Hospital of Chengde Medical College from September 2018 to February 2021 were selected as the research objects, and the changes in the expression levels of DC cells, NKG2D, TNF-a, IFN-r, HMGB-1 in the peripheral blood of patients at different time points (before chemotherapy, after the first chemotherapy, and after the second chemotherapy) were analyzed, and the correlation between DC cells in blood and NKG2D, TNF-a, IFN-r, HMGB-1 at each time point was explored. <strong>Results:</strong> The expression levels of NKG2D, TNF-a, IFN-r, and HMGB-1 in the peripheral blood of the patient before chemotherapy, after the first chemotherapy, and after the second chemotherapy gradually decreased, and there was no significant change in DC cells, except for DC cells at different times. The difference between each factor of each point was statistically significant (all P < 0.05). Pearson correlation analysis showed that there was no correlation between peripheral blood DC cells of patients at different time points and other factors. <strong>Conclusion:</strong> The decrease of other immune cytokines except DC cells in peripheral blood of patients with NSCLC after chemotherapy may be one of the mechanisms by which the patient’s immune function is suppressed. There is no correlation between DC cells and other factors.展开更多
The indium-tin oxide （ITO） film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction （HJ） solar cells. To obtain high transmittance and low resistivi...The indium-tin oxide （ITO） film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction （HJ） solar cells. To obtain high transmittance and low resistivity ITO films by direct-current （DC） magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4 x 10-4 ~.m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions： oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si：H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage （Voc） of 0.626 V, a filling factor （FF） of 0.50, and a short circuit current density （Jsc） of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si：H layer was inserted between the （p） a-Si：H and （n） c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si：H.展开更多
The interests on energy storage schemes, bidirectional dc-dc converter and uninterruptible power supplies have been increasing nowadays as there wide researches are undertaken in the area of electric vehicles. A modif...The interests on energy storage schemes, bidirectional dc-dc converter and uninterruptible power supplies have been increasing nowadays as there wide researches are undertaken in the area of electric vehicles. A modified bi directional class-E resonant dc-dc converter is introduced here in this proposed topology for the application in electric vehicles. The advantages of soft switching techniques have been utilized for making analysis simple. The main advantage here in this system is that it can operate in a wide range of frequencies with minimal switching loss in transistors. This paper elaborates a detailed analysis on converter design and the same has been simulated and verified in Matlab/Simulink.展开更多
文摘<strong>Objective:</strong> To analyze the effects of chemotherapy on peripheral blood DC cells and related immune cytokines (NKG2D, DC cells, TNF-a, IFN-r, HMGB-1) in patients with non-small cell lung cancer (NSCLC). <strong>Methods:</strong> Ninety-five NSCLC patients who attended the Oncology Department of the Affiliated Hospital of Chengde Medical College from September 2018 to February 2021 were selected as the research objects, and the changes in the expression levels of DC cells, NKG2D, TNF-a, IFN-r, HMGB-1 in the peripheral blood of patients at different time points (before chemotherapy, after the first chemotherapy, and after the second chemotherapy) were analyzed, and the correlation between DC cells in blood and NKG2D, TNF-a, IFN-r, HMGB-1 at each time point was explored. <strong>Results:</strong> The expression levels of NKG2D, TNF-a, IFN-r, and HMGB-1 in the peripheral blood of the patient before chemotherapy, after the first chemotherapy, and after the second chemotherapy gradually decreased, and there was no significant change in DC cells, except for DC cells at different times. The difference between each factor of each point was statistically significant (all P < 0.05). Pearson correlation analysis showed that there was no correlation between peripheral blood DC cells of patients at different time points and other factors. <strong>Conclusion:</strong> The decrease of other immune cytokines except DC cells in peripheral blood of patients with NSCLC after chemotherapy may be one of the mechanisms by which the patient’s immune function is suppressed. There is no correlation between DC cells and other factors.
基金supported by the National High Technology Research and Development Program of China(Grant No.2011AA050501)
文摘The indium-tin oxide （ITO） film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction （HJ） solar cells. To obtain high transmittance and low resistivity ITO films by direct-current （DC） magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4 x 10-4 ~.m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions： oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si：H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage （Voc） of 0.626 V, a filling factor （FF） of 0.50, and a short circuit current density （Jsc） of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si：H layer was inserted between the （p） a-Si：H and （n） c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si：H.
文摘The interests on energy storage schemes, bidirectional dc-dc converter and uninterruptible power supplies have been increasing nowadays as there wide researches are undertaken in the area of electric vehicles. A modified bi directional class-E resonant dc-dc converter is introduced here in this proposed topology for the application in electric vehicles. The advantages of soft switching techniques have been utilized for making analysis simple. The main advantage here in this system is that it can operate in a wide range of frequencies with minimal switching loss in transistors. This paper elaborates a detailed analysis on converter design and the same has been simulated and verified in Matlab/Simulink.
