Overview of development, design, testing and application of compact gas-insulated DC systems up to ±550 kV

The development of high-voltage direct current gas-insulated switchgear assemblies(DC GIS)of rated voltages up to±550 kV has been completed.DC GIS provide a compact technical solution with a high functional density,optimized for projects with limited space as in offshore HVDC converter platforms,onshore HVDC converter stations and transition stations between different transmission media.Up to now,no standards for testing of gas-insulated DC systems are available,although pre-standardization work is in progress within CIGRE.Some tests can be performed as required in AC GIS standards.Special aspects of DC voltage stress,like the electric field distribution of insulators influenced by the accumulation of electrical charge carriers and the operation-related inhomogeneous temperature distribution,must be considered by additional electric and thermoelectric tests.For DC GIS,the experience of long-term performance is limited today.Although ageing is expected to be of lower importance,tests are recommended.This contribution summarizes the physical and technical background to design and develop compact DC switchgear assemblies using gas-insulated technology.It explains the developed modules of the substation and gives an overview of the performed tests.Furthermore,it provides an insight in the on-going standardization activities and describes applications in converter and transition stations,showing its space-saving characteristics.

基于X射线短时照射的高压直流GIS/GIL绝缘子表面电荷主动消散方法

直流气体绝缘开关装置及气体绝缘输电管道(GIS/GIL)绝缘子长期运行过程中会积聚大量表面电荷,易引起绝缘子异常闪络。近年来国内外学者开展了大量卓有成效的工作,深刻揭示了绝缘子表面电荷的积聚和消散机理,但GIS/GIL不打开罐体条件下,绝缘子表面电荷的快速消散问题一直没有解决。该文首次提出基于X射线短时照射的绝缘子表面电荷主动消散新方法,试验研究发现X射线照射30s即能使空气中绝缘子表面电荷几乎完全消散。对基于X射线照射的绝缘子表面电荷消散机理进行了探讨,认为X射线可能通过促进气体侧电荷沿传导及绝缘子表面电荷脱陷而实现其快速消散。由于X射线能够穿透GIS/GIL金属罐体,相关实验结果为GIS/GIL不打开罐体条件下实现绝缘子表面电荷快速消散提供了可能途径,对进一步推进直流GIS/GIL工程化具有重要意义。

直流GIS/GIL盆式绝缘子表面电荷主导积聚方式的转变机理

构建气体侧传导(包含气体载流子产生、扩散、漂移、复合等输运过程)、绝缘材料体传导和表面传导共存条件下盆式绝缘子表面电荷积聚仿真模型,研究了三种参数变化条件下表面积聚特性。仿真表明,当气体中离子对生成率和绝缘子体电导率改变时,绝缘子表面电荷极性会发生改变。在此过程中,表面电荷积聚主导途径会在气体侧传导和绝缘子体传导之间转变。根据净电荷值的规律分别定义离子对生成率和体电导率改变时积聚途径改变的临界值,由于电场分布的差异导致上表面及下表面的临界离子对生成率不同,临界体电导率为5.76×10-18S/m。当绝缘子表面电导率增大时,表面传导对电荷积聚的影响逐渐增大,可以推测出表面电导率足够大时,电荷积聚主导机理会转变为表面传导。该研究有助于理解表面电荷的积聚机理,并能够为抑制电荷积聚提供新的思路。