Based on the construction of the 8-inch fabricat ion line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor(DMOS+) insulated-gate bip...Based on the construction of the 8-inch fabricat ion line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor(DMOS+) insulated-gate bipolar transistor(IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.展开更多
In this review,we review the progress of research on ZnO-and In2O3-based diluted magnetic oxides(DMOs).Firstly,we present the preparation and characterization of DMOs.The former includes the preparation methods and co...In this review,we review the progress of research on ZnO-and In2O3-based diluted magnetic oxides(DMOs).Firstly,we present the preparation and characterization of DMOs.The former includes the preparation methods and conditions,and the latter includes the characterization techniques for measuring microstructures.Secondly,we introduce the magnetic and transport properties of DMOs,as well as the relationship between them.Thirdly,the origin and mechanism of the ferromagnetism are discussed.Fourthly,we introduce other related work,including computational work and pertinent heterogeneous structures,such as multilayers and magnetic tunnel junctions.Finally,we provide an overview and outlook for DMOs.展开更多
文摘Based on the construction of the 8-inch fabricat ion line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor(DMOS+) insulated-gate bipolar transistor(IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.
基金supported by China National Funds for Distinguished Young Scientists(Grant No.51025101)the National Natural Science Foundation of China(Grant Nos.11274214,11104173 and 61204097)+1 种基金the Research Fund for the Doctoral Program of Higher Education(Grant No. 20101404120002)the Youth Science Foundation of Shanxi Province (Grant Nos.2011021021-1,2011021021-2 and 2012021020-2)
文摘In this review,we review the progress of research on ZnO-and In2O3-based diluted magnetic oxides(DMOs).Firstly,we present the preparation and characterization of DMOs.The former includes the preparation methods and conditions,and the latter includes the characterization techniques for measuring microstructures.Secondly,we introduce the magnetic and transport properties of DMOs,as well as the relationship between them.Thirdly,the origin and mechanism of the ferromagnetism are discussed.Fourthly,we introduce other related work,including computational work and pertinent heterogeneous structures,such as multilayers and magnetic tunnel junctions.Finally,we provide an overview and outlook for DMOs.
