A light-activated Darlington heterojunction transistor based on a SiCGe/3C-SiC hetero-structure is proposed for anti-EMI（electromagnetic interference） applications. The performance of the novel power switch is simul...A light-activated Darlington heterojunction transistor based on a SiCGe/3C-SiC hetero-structure is proposed for anti-EMI（electromagnetic interference） applications. The performance of the novel power switch is simulated using ISE. In comparison with the switches based on other polytypes of SiC,the design benefits from having fewer lattice mismatches between the SiCGe and 3C-SiC. A maximum common emitter current gain of about 890 and superb light-activation characteristics may be achievable. The performance simulation demonstrates that the device has a good I-V characteristic with a turn-on voltage knee of about 4V.展开更多
This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors. In contrast to Bipolar conventional Darlingtonpair, a...This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors. In contrast to Bipolar conventional Darlingtonpair, a MOSFET Darlington configuration is employed to reduce supply voltage (VDD) and DC consumption power (Pc). The frequency response parameters of the proposed design such as bandwidth, gain bandwidth product, input/output noises and noise figure (NF) are improved in proposed (IF) amplifier. Moreover, a dual-input and dual-output (DIDO) IF amplifier constructed from two symmetrical single input and single output (SISO) (IF) amplifier is proposed too. The idea is to achieve improved bandwidth, and flat response, because these parameters are very important in high frequency applications. Simulation results that obtained by P-SPICE program are 1.2 GHz Bandwidth (BW), 3.4 GHz (gain bandwidth product), 0.5 mW DC consumption power (Pc) and the low total output noise is 12 nV with 1.2 V single supply voltage.展开更多
Theoretical research on the heat accumulation effect of a Darlington transistor induced by high power microwave is conducted,and temperature variation as functions of pulse repetitive frequency（PRF）and duty cycle（D...Theoretical research on the heat accumulation effect of a Darlington transistor induced by high power microwave is conducted,and temperature variation as functions of pulse repetitive frequency（PRF）and duty cycle（DC）are studied.According to the distribution of the electronic field and the current density in the Darlington transistor,the research of the damage mechanism is carried out.The results show that for repetitive pulses with the same pulse widths and different PRFs,the value of temperature variation increases with PRF increases,and the peak temperature has almost no change when PRF is lower than 200 k Hz;while for the repetitive pulses with the same PRF and different pulse widths,the larger the pulse width is,the greater temperature variation varies.The response of the peak temperature caused by a single pulse demonstrates that there is no temperature variation when the rising time is much shorter than the falling time.In addition,the relationship between the temperature variation and the time during the rising edge time as well as that between the temperature variation and the time during the falling edge time are obtained utilizing the curve fitting method.Finally,for a certain average power,with DC increases the value of temperature variation decreases.展开更多
Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneo...Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneous formation process for both n-type(emitter) and p-type(base) ohmic contact. The isolated device shows current gain of 1061 and 823 with collector current density(JC) increasing from 200 to 800 A/cm2, exhibiting a slight current gain drop at high JC. By extracting the interface state density(Dit) between Si O2 and p-type 4 H-Si C, it is found that this advantage owes to the improvement of the shallow bulk minority carrier lifetime in base region. Furthermore, ISE-TCAD(technology computer aided design) simulation was carried out to study the relationship between base minority lifetime and the current gain, from which the total base minority lifetime is estimated to be 48 ns. The open base breakdown voltage(BVCEO) is 850 V at a leakage current of 2 μA due to the electric filed crowding at the isolation bottom between drive bipolar junction transistor(BJT) and output BJT. To solve this, non-isolated devices were also fabricated with improved BVCEOof 2370 V, indicating the superior potential of 4 H-Si C monolithic Darlington transistors for high power application, while the current gain is deceased to 420, which needs further improvement.展开更多
文摘A light-activated Darlington heterojunction transistor based on a SiCGe/3C-SiC hetero-structure is proposed for anti-EMI（electromagnetic interference） applications. The performance of the novel power switch is simulated using ISE. In comparison with the switches based on other polytypes of SiC,the design benefits from having fewer lattice mismatches between the SiCGe and 3C-SiC. A maximum common emitter current gain of about 890 and superb light-activation characteristics may be achievable. The performance simulation demonstrates that the device has a good I-V characteristic with a turn-on voltage knee of about 4V.
文摘This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors. In contrast to Bipolar conventional Darlingtonpair, a MOSFET Darlington configuration is employed to reduce supply voltage (VDD) and DC consumption power (Pc). The frequency response parameters of the proposed design such as bandwidth, gain bandwidth product, input/output noises and noise figure (NF) are improved in proposed (IF) amplifier. Moreover, a dual-input and dual-output (DIDO) IF amplifier constructed from two symmetrical single input and single output (SISO) (IF) amplifier is proposed too. The idea is to achieve improved bandwidth, and flat response, because these parameters are very important in high frequency applications. Simulation results that obtained by P-SPICE program are 1.2 GHz Bandwidth (BW), 3.4 GHz (gain bandwidth product), 0.5 mW DC consumption power (Pc) and the low total output noise is 12 nV with 1.2 V single supply voltage.
基金supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(No.2015-0214.XY.K)
文摘Theoretical research on the heat accumulation effect of a Darlington transistor induced by high power microwave is conducted,and temperature variation as functions of pulse repetitive frequency（PRF）and duty cycle（DC）are studied.According to the distribution of the electronic field and the current density in the Darlington transistor,the research of the damage mechanism is carried out.The results show that for repetitive pulses with the same pulse widths and different PRFs,the value of temperature variation increases with PRF increases,and the peak temperature has almost no change when PRF is lower than 200 k Hz;while for the repetitive pulses with the same PRF and different pulse widths,the larger the pulse width is,the greater temperature variation varies.The response of the peak temperature caused by a single pulse demonstrates that there is no temperature variation when the rising time is much shorter than the falling time.In addition,the relationship between the temperature variation and the time during the rising edge time as well as that between the temperature variation and the time during the falling edge time are obtained utilizing the curve fitting method.Finally,for a certain average power,with DC increases the value of temperature variation decreases.
基金supported by the National Key Research and Development Program(Grant No.2016YFB0400500)the National Grid Science&Technology Project(Grant No.5455DW150006)+2 种基金the Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.2017JM6003)the Industrial Research Project of Science and Technology Department of Shaanxi Province(Grant No.2016GY-076)the 111 Project(Grant No.B12026)
文摘Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneous formation process for both n-type(emitter) and p-type(base) ohmic contact. The isolated device shows current gain of 1061 and 823 with collector current density(JC) increasing from 200 to 800 A/cm2, exhibiting a slight current gain drop at high JC. By extracting the interface state density(Dit) between Si O2 and p-type 4 H-Si C, it is found that this advantage owes to the improvement of the shallow bulk minority carrier lifetime in base region. Furthermore, ISE-TCAD(technology computer aided design) simulation was carried out to study the relationship between base minority lifetime and the current gain, from which the total base minority lifetime is estimated to be 48 ns. The open base breakdown voltage(BVCEO) is 850 V at a leakage current of 2 μA due to the electric filed crowding at the isolation bottom between drive bipolar junction transistor(BJT) and output BJT. To solve this, non-isolated devices were also fabricated with improved BVCEOof 2370 V, indicating the superior potential of 4 H-Si C monolithic Darlington transistors for high power application, while the current gain is deceased to 420, which needs further improvement.
