We investigate the effect of ozone(O_(3))oxidation of silicon carbide(SiC)on the flat-band voltage(Vfb)stability of SiC metal–oxide–semiconductor(MOS)capacitors.The SiC MOS capacitors are produced by O_(3)oxidation,...We investigate the effect of ozone(O_(3))oxidation of silicon carbide(SiC)on the flat-band voltage(Vfb)stability of SiC metal–oxide–semiconductor(MOS)capacitors.The SiC MOS capacitors are produced by O_(3)oxidation,and their Vfbstability under frequency variation,temperature variation,and bias temperature stress are evaluated.Secondary ion mass spectroscopy(SIMS),atomic force microscopy(AFM),and x-ray photoelectron spectroscopy(XPS)indicate that O_(3)oxidation can adjust the element distribution near SiC/SiO_(2)interface,improve SiC/SiO_(2)interface morphology,and inhibit the formation of near-interface defects,respectively.In addition,we elaborate the underlying mechanism through which O_(3)oxidation improves the Vfbstability of SiC MOS capacitors by using the measurement results and O_(3)oxidation kinetics.展开更多
Resistive switching Ag/Ag2S nanoclusters were formed by sulphidation of melting-dispersed thin and continuous Ag films. The morphology, structure and electrical properties of the prepared clusters were characterized b...Resistive switching Ag/Ag2S nanoclusters were formed by sulphidation of melting-dispersed thin and continuous Ag films. The morphology, structure and electrical properties of the prepared clusters were characterized by scanning (SEM), transmitting electron (TEM), scanning resistance microscopes (SRM) and Raman scattering. Hysteretic resistive switching behavior was observed in the samples that were studied with ON/OFF switching voltage equal to 8 - 10 V respectively. Simple empirical numerical simulation model, based on Deal-Grove model assumptions and mechanisms, for silver nanoclusters sulphidation process, was proposed.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61874017)。
文摘We investigate the effect of ozone(O_(3))oxidation of silicon carbide(SiC)on the flat-band voltage(Vfb)stability of SiC metal–oxide–semiconductor(MOS)capacitors.The SiC MOS capacitors are produced by O_(3)oxidation,and their Vfbstability under frequency variation,temperature variation,and bias temperature stress are evaluated.Secondary ion mass spectroscopy(SIMS),atomic force microscopy(AFM),and x-ray photoelectron spectroscopy(XPS)indicate that O_(3)oxidation can adjust the element distribution near SiC/SiO_(2)interface,improve SiC/SiO_(2)interface morphology,and inhibit the formation of near-interface defects,respectively.In addition,we elaborate the underlying mechanism through which O_(3)oxidation improves the Vfbstability of SiC MOS capacitors by using the measurement results and O_(3)oxidation kinetics.
文摘Resistive switching Ag/Ag2S nanoclusters were formed by sulphidation of melting-dispersed thin and continuous Ag films. The morphology, structure and electrical properties of the prepared clusters were characterized by scanning (SEM), transmitting electron (TEM), scanning resistance microscopes (SRM) and Raman scattering. Hysteretic resistive switching behavior was observed in the samples that were studied with ON/OFF switching voltage equal to 8 - 10 V respectively. Simple empirical numerical simulation model, based on Deal-Grove model assumptions and mechanisms, for silver nanoclusters sulphidation process, was proposed.
