The results of an experimental study of long-term relaxation of the photoelectret state of polycrystalline CdTe:(Ag, Cu, Cd) and Sb<sub>2</sub>Se<sub>3</sub>:Se films with an anomalous photovol...The results of an experimental study of long-term relaxation of the photoelectret state of polycrystalline CdTe:(Ag, Cu, Cd) and Sb<sub>2</sub>Se<sub>3</sub>:Se films with an anomalous photovoltaic property are presented. In such films, the residual photovoltage is caused by the separation of photocarriers by the built-in electrostatic field of the near-surface region of space charges and their asymmetric capture by deep levels of impurities or complexes, including impurity atoms and intrinsic defects, both in the bulk and on the surface of crystal grains. It has been shown that in activated films, a two-step exponential temporary relaxation of the initial photovoltage of the order of V<sub>APV</sub> ≈ (500-600) V is detected, and only 10% of it experiences long-term relaxation (t ≈ 100-120 min).展开更多
The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution depending on the condit...The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution depending on the conditions of preparation and heat treatment in various media are presented. It is shown that at x = 0.8 cadmium vacancies create a deep level with an activation energy Е<sub>v</sub> + (0.63 ± 0.02) eV, a complex of chlorine atom with a cadmium vacancy creates a level Е<sub>v</sub> + (0.43 ± 0.02) eV, as well as the fast recombination center Еv + (0.92 ± 0.02) eV. The formation of selenium vacancies due to the introduction of chlorine and its combination with cadmium leads to the appearance of a sticking level Е<sub>c</sub> - (0.19 ± 0.02) eV. CdSe<sub>0.8</sub>S<sub>0.2</sub> films can be used to develop light emitting diodes, photo sensors, IR and visible lasers.展开更多
文摘The results of an experimental study of long-term relaxation of the photoelectret state of polycrystalline CdTe:(Ag, Cu, Cd) and Sb<sub>2</sub>Se<sub>3</sub>:Se films with an anomalous photovoltaic property are presented. In such films, the residual photovoltage is caused by the separation of photocarriers by the built-in electrostatic field of the near-surface region of space charges and their asymmetric capture by deep levels of impurities or complexes, including impurity atoms and intrinsic defects, both in the bulk and on the surface of crystal grains. It has been shown that in activated films, a two-step exponential temporary relaxation of the initial photovoltage of the order of V<sub>APV</sub> ≈ (500-600) V is detected, and only 10% of it experiences long-term relaxation (t ≈ 100-120 min).
文摘The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution depending on the conditions of preparation and heat treatment in various media are presented. It is shown that at x = 0.8 cadmium vacancies create a deep level with an activation energy Е<sub>v</sub> + (0.63 ± 0.02) eV, a complex of chlorine atom with a cadmium vacancy creates a level Е<sub>v</sub> + (0.43 ± 0.02) eV, as well as the fast recombination center Еv + (0.92 ± 0.02) eV. The formation of selenium vacancies due to the introduction of chlorine and its combination with cadmium leads to the appearance of a sticking level Е<sub>c</sub> - (0.19 ± 0.02) eV. CdSe<sub>0.8</sub>S<sub>0.2</sub> films can be used to develop light emitting diodes, photo sensors, IR and visible lasers.
