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Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy
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作者 Jin Sui Jiaxiang Chen +3 位作者 Haolan Qu Yu Zhang Xing Lu Xinbo Zou 《Journal of Semiconductors》 EI CAS CSCD 2024年第3期58-63,共6页
Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-sec... Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment. 展开更多
关键词 GaN deep level transient spectroscopy minority carrier trap time constant trap concentration
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Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells 被引量:2
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作者 黎兵 冯良桓 +8 位作者 王钊 郑旭 郑家贵 蔡亚平 张静全 李卫 武莉莉 雷智 曾广根 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第3期378-381,共4页
It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimati... It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation (CSS). The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I-V and C-V measurements and deep level transient spectroscopy (DLTS). By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580℃sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev + 0.341 eV(H4), E, + 0.226 eV(HS) and Ec - 0.147 eV(E3), are found in the 580℃sample, and the possible source of deep levels is analysed and discussed. 展开更多
关键词 CDTE electrical properties deep level transient spectroscopy
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Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact 被引量:1
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作者 王钊 黎兵 +5 位作者 郑旭 谢婧 黄征 刘才 冯良桓 郑家贵 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第2期461-464,共4页
Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep... Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at Ev+0.128~eV, originates from the vacancy of Cd (VCd. The electron trap E1, found at Ec-0.178~eV, is considered to be correlated with the interstitial Cui= in CdTe. 展开更多
关键词 deep level transient spectroscopy CdS/CdTe solar cells Te:Cu back contact
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Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon,as-irradiated and after thermal annealing
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作者 李炳生 张崇宏 +2 位作者 杨义涛 周丽宏 张洪华 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第1期246-250,共5页
Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscop... Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873 K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073 K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres. 展开更多
关键词 helium-ion irradiation defect activation energy charge-sensitive deep level transient spectroscopy
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Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling
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作者 Ken K.Chin Zimeng Cheng 《Journal of Semiconductors》 EI CAS CSCD 2016年第9期26-32,共7页
The widely used deep level transient spectroscopy(DLTS) theory and data analysis usually assume that the defect level distribution is uniform through the depth of the depletion region of the n–p junction. In this w... The widely used deep level transient spectroscopy(DLTS) theory and data analysis usually assume that the defect level distribution is uniform through the depth of the depletion region of the n–p junction. In this work we introduce the concept of effective Fermi level of the steady state of semiconductor, by using which deep level transient spectroscopy depth profiling(DLTSDP) is proposed. Based on the relationship of its transition free energy level(TFEL) and the effective Fermi level, the rules of detectivity of the defect levels are listed. Computer simulation of DLTSDP is presented and compared with experimental data. The experimental DLTS data are compared with what the DLTSDP selection rules predicted. The agreement is satisfactory. 展开更多
关键词 Fermi level deep level transient spectroscopy Schottky junction
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Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing
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作者 Huifan Xiong Xuesong Lu +5 位作者 Xu Gao Yuchao Yan Shuai Liu Lihui Song Deren Yang Xiaodong Pi 《Journal of Semiconductors》 EI CAS CSCD 2024年第7期77-83,共7页
Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to ... Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects. 展开更多
关键词 4H-SIC deep level transient spectroscopy(DLTS) photoluminescence(PL) DEFECTS
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Electric properties of Ge quantum dot embedded in Si matrix
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作者 马锡英 施维林 《Journal of Central South University of Technology》 2005年第2期159-162,共4页
The electric characteristics of Ge quantum dot grown by molecular beam epitaxy in Si matrix were investigated by admittance spectroscopy and deep level transient spectroscopy. The admittance spectroscopy measurements ... The electric characteristics of Ge quantum dot grown by molecular beam epitaxy in Si matrix were investigated by admittance spectroscopy and deep level transient spectroscopy. The admittance spectroscopy measurements show that the activation energy of 0.341eV can be considered as the emitting energy of hole from the ground state of the quantum dot. And the capacitance variation with temperature of the sample shows a platform at various frequencies with reverse bias (0.5 V,) which indicates that the boundary of space charge region is located at the quantum dot layer where the large confined hole concentration blocks the further extension of space charge region. When the temperature increases from 120K to 200K, the holes in the dot emit out completely. The position of the platform shifting with the increase of the applied frequency shows the frequency effects of the charges in the quantum dot. The deep level transient spectroscopy results show that the charge concentration in the Ge quantum dot is a function of the pulse duration and the reverse bias voltage, the activation energy and capture cross-section of hole decrease with the increase of pulse duration due to the Coulomb charging effect. The valence-band offsets of hole in Ge dot obtained by admittance spectroscopy and deep level transient spectroscopy are 0.341 and 0.338eV, respectively. 展开更多
关键词 Ge quantum dot admittance spectroscopy deep level transient spectroscopy
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