Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of5.5×10^(13), 1.7×10^(14), and 3.3×1014 e cm^(-2). The forward voltage drop, minority carrier lifetime, and d...Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of5.5×10^(13), 1.7×10^(14), and 3.3×1014 e cm^(-2). The forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy(DLTS) characteristics of silicon p–n junction diodes before and after irradiation were compared. At the fluence of 3.3×10^(14) e cm^(-2), the forward voltage drop increased from 1.25 V at 0.5 MeV to 7.96μs at 5.0 MeV, while the minority carrier lifetime decreased significantly from 7.09 ls at 0.5 MeV to 0.06μs at 5.0 MeV. Six types of changes in the energy levels in DLTS spectra were analyzed and discussed.展开更多
Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to ...Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.展开更多
利用深能级瞬态谱(DLTS)研究了气源分子束外延(GSMBE)生长的InP1-xBix材料中深能级中心的性质。在未有意掺杂的InP中测量到一个多数载流子深能级中心E1,E1的能级位置为Ec-0.38 e V,俘获截面为1.87×10^(-15)cm^2。在未有意掺杂的InP...利用深能级瞬态谱(DLTS)研究了气源分子束外延(GSMBE)生长的InP1-xBix材料中深能级中心的性质。在未有意掺杂的InP中测量到一个多数载流子深能级中心E1,E1的能级位置为Ec-0.38 e V,俘获截面为1.87×10^(-15)cm^2。在未有意掺杂的InP0.9751Bi0.0249中测量到一个少数载流子深能级中心H1,H1的能级位置为Ev+0.31 eV,俘获截面为2.87×10^(-17)cm^2。深中心E1应该起源于本征反位缺陷PIn,深中心H1可能来源于形成的Bi原子对或者更复杂的与Bi相关的团簇。明确这些缺陷的起源对于InPBi材料在器件应用方面具有重要的意义。展开更多
寿命控制技术是现在广泛使用的方法,该方法旨在减少快恢复二极管(FRD)基区载流子寿命从而实现更小的反向恢复时间,同时不可避免地引起其他性能的变化。通过高能电子辐照和扩铂对1 200 V FRD进行了寿命控制,并对铂扩散和电子辐照样品在...寿命控制技术是现在广泛使用的方法,该方法旨在减少快恢复二极管(FRD)基区载流子寿命从而实现更小的反向恢复时间,同时不可避免地引起其他性能的变化。通过高能电子辐照和扩铂对1 200 V FRD进行了寿命控制,并对铂扩散和电子辐照样品在正向压降温度特性、静态和反向恢复特性等方面进行了对比分析,发现铂扩散样品随扩铂温度的增加,其击穿电压变大;高能电子辐照器件呈现电压正温度系数,其正向压降和反向恢复时间(VF-trr)折中曲线更靠近原点。实验结果表明,高能电子辐照样品具有更好的温度系数、更好的VF-trr折中特性,然而反向电流在125℃却高达约210μA。展开更多
基金supported by the Beijing education and scientific research department(No.KM201510005008)
文摘Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of5.5×10^(13), 1.7×10^(14), and 3.3×1014 e cm^(-2). The forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy(DLTS) characteristics of silicon p–n junction diodes before and after irradiation were compared. At the fluence of 3.3×10^(14) e cm^(-2), the forward voltage drop increased from 1.25 V at 0.5 MeV to 7.96μs at 5.0 MeV, while the minority carrier lifetime decreased significantly from 7.09 ls at 0.5 MeV to 0.06μs at 5.0 MeV. Six types of changes in the energy levels in DLTS spectra were analyzed and discussed.
基金supported by the Open Fund(2022E10015)of the Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced Semiconductors,ZJU-Hangzhou Global Scientific and Technological Innovation Center。
文摘Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.
文摘利用深能级瞬态谱(DLTS)研究了气源分子束外延(GSMBE)生长的InP1-xBix材料中深能级中心的性质。在未有意掺杂的InP中测量到一个多数载流子深能级中心E1,E1的能级位置为Ec-0.38 e V,俘获截面为1.87×10^(-15)cm^2。在未有意掺杂的InP0.9751Bi0.0249中测量到一个少数载流子深能级中心H1,H1的能级位置为Ev+0.31 eV,俘获截面为2.87×10^(-17)cm^2。深中心E1应该起源于本征反位缺陷PIn,深中心H1可能来源于形成的Bi原子对或者更复杂的与Bi相关的团簇。明确这些缺陷的起源对于InPBi材料在器件应用方面具有重要的意义。
文摘寿命控制技术是现在广泛使用的方法,该方法旨在减少快恢复二极管(FRD)基区载流子寿命从而实现更小的反向恢复时间,同时不可避免地引起其他性能的变化。通过高能电子辐照和扩铂对1 200 V FRD进行了寿命控制,并对铂扩散和电子辐照样品在正向压降温度特性、静态和反向恢复特性等方面进行了对比分析,发现铂扩散样品随扩铂温度的增加,其击穿电压变大;高能电子辐照器件呈现电压正温度系数,其正向压降和反向恢复时间(VF-trr)折中曲线更靠近原点。实验结果表明,高能电子辐照样品具有更好的温度系数、更好的VF-trr折中特性,然而反向电流在125℃却高达约210μA。
