Characteristics and formation mechanisms of defect bands in vacuum-assisted high-pressure die casting AE44 alloy

The microstructure in vacuum-assisted high-pressure die casting(HPDC) Mg-4Al-4RE(AE44) alloy was studied. Special attention was paid to the characteristics of defect bands and their formation mechanisms. Since double defect bands are commonly observed, the cross section of die cast samples is divided into five parts with different grain morphologies and size distributions. The inner defect band is much wider than the outer one. Both the defect bands are solute segregation bands, resulting in a higher area fraction of Al;RE;phase than that in the adjacent regions. No obvious aggregation of porosities is observed in the defect bands of AE44 alloy. This may be due to a narrow solidification temperature range of AE44 alloy and a large amount of latent heat released during the precipitation of intermetallic phases. The formation of the defect bands is related to the shear stress acting upon the partially solidified alloy, which can lead to collapse of the grain network. However, the generation mechanisms of shear stress in the outer and inner defect bands are quite different.

Defect band formation in high pressure die casting AE44 magnesium alloy

The characteristics of defect bands in the microstructure of high pressure die casting(HPDC)AE44 magnesium alloy were investigated.Special attention was paid to the effects of process parameters during the HPDC process and casting structure on the distribution of defect bands.Results show that the defect bands are solute segregation bands with the enrichment of Al,Ce and La elements,which are basically in the form of Al_(11)RE_(3) phase.There is no obvious aggregation of porosities in the defect bands.The width of the inner defect band is 4-8 times larger than that of the outer one.The variation trends of the distribution of the inner and outer defect bands are not consistent under different process parameters and at different locations of castings.This is due to the discrepancy between the formation mechanisms of double defect bands.The filling and solidification behavior of the melt near the chilling layer is very complicated,which finally leads to a fluctuation of the width and location of the outer defect band.By affecting the content and aggregation degree of externally solidified crystals(ESCs)in the cross section of die castings,the process parameters and casting structure have a great influence on the distribution of the inner defect band.

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

The influence of a deep-level-defect（DLD） band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN（p^＋＋-GaN） contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping（VRH） transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p^＋＋-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p^＋＋-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97×10^-4Ω·cm^2 is achieved.

Influence of Defect Density, Band Gap Discontinuity and Electron Mobility on the Performance of Perovskite Solar Cells

In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 1016 cm-3 all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.

Excitation of defect modes from the extended photonic band-gap structures of 1D photonic lattices

This paper stuides numerically the model equation in a one dimensional defective photonic lattice by modifying the potential function to a periodic function. It is found that defect modes （DMs） can be regarded as Bloch modes which are excited from the extended photonie band-gap structure at Bloch wave-numbers with kx = 0. The DMs for both positive and negative defects are considered in this method.

Influence of defect states on band gaps in the two-dimensional phononic crystal of 4340 steel in an epoxy

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.

Different Feeding Techniques of Microstrip Patch Antennas with Spiral Defected Ground Structure for Size Reduction and Ultra-Wide Band Operation

Different feeding techniques of microstrip patch antennas with different spiral defected ground structures are presented in this paper. The investigated structures illustrate some merits in designing multi-electromagnetic band-gap structures by adjusting the capacitance and changing the inductance through varying the width and length of spiral defected ground structure. Then by applying the three different spirals shapes (one, two and four arms) as the ground plane of microstrip patch antenna with different feeding techniques to create multi or ultra wide-band, improve the antenna gain and reduce the antenna size, it is found that the four arms spiral defected ground structure of microstrip patch antenna with offset feed gives good performance, electrical size reduction to about 75% as compared to the original patch size and ultra-wide bandwidth extends from 2 GHz up to 12 GHz with ?8 dB impedance bandwidth.

Extreme narrow photonic passbands generated from defective two-segment-connected triangular waveguide networks

In this paper, we investigate the optical transmission properties of perfect and defective two-segment-connected tri- angular waveguide networks （2SCTWNs） and find that after introducing defects in networks, many groups of transparent extreme narrow photonic passbands （ENPPs） will be created in the middle of the transmission spectra, the number for each group and the group number of ENPPs can he adjusted by the matching ratios of waveguide length （MRWLs）, the number of defects, and the number of unit cells of 2SCTWNs. The influences of MRWL, number of defects, and number of unit cells on the number, width, and position of these ENPPs are researched and a series of quantitative rules and prop- erties are obtained. It may be useful for the designing of high-sensitive optical switches, wavelength division multiplexers, extreme-narrowband filters, and other correlative waveguide network devices.

Band structure engineering and defect control of oxides for energy applications

Metal oxides play an essential role in modern optoelectronic devices because they have many unique physical properties such as structure diversity, superb stability in solution, good catalytic activity, and simultaneous high electron conductivity and optical transmission. Therefore, they are widely used in energy-related optoelectronic applications such as photovoltaics and photoelectrochemical（PEC） fuel generation. In this review, we mainly discuss the structure engineering and defect control of oxides for energy applications, especially for transparent conducting oxides（TCOs） and oxide catalysts used for water splitting. We will review our current understanding with an emphasis on the contributions of our previous theoretical modeling, primarily based on density functional theory. In particular, we highlight our previous work：（i） the fundamental principles governing the crystal structures and the electrical and optical behaviors of TCOs;（ii） band structures and defect properties for n-type TCOs;（iii） why p-type TCOs are difficult to achieve;（iv） how to modify the band structure to achieve p-type TCOs or even bipolarly dopable TCOs;（v） the origin of the high-performance of amorphous TCOs; and（vi） band structure engineering of bulk and nano oxides for PEC water splitting. Based on the understanding above, we hope to clarify the key issues and the challenges facing the rational design of novel oxides and propose new and feasible strategies or models to improve the performance of existing oxides or design new oxides that are critical for the development of next-generation energy-related applications.

Effect of Defects at the Buffer Layer CdS/Absorber CIGS Interface on CIGS Solar Cell Performance

This scientific paper presents a study investigating the effects of defects at the CdS/CIGS and CdS/SDL interfaces on the performance of CIGS solar cells. The objective of this study is to analyze the influence of defects at the interface between the CdS buffer layer and the CIGS absorber, as well as the surface defect layer (SDL), on CIGS solar cell performance. The study explores three key aspects: the impact of the conduction band offset (CBO) at the CdS/CIGS interface, the effects of interface defects and defect density on performance, and the combined influence of CBO and defect density at the CdS/ SDL and SDL/CIGS interfaces. For interface defects not exceeding 1013 cm-2, we obtained a good efficiency of 22.9% when -0.1 eV analyzing the quality of CdS/SDL and SDL/CIGS junctions, it appears that defects at the SDL/CIGS interface have very little impact on the performances of the CIGS solar cell. By optimizing the electrical parameters of the CdS/SDL interface defects, we achieved a conversion efficiency of 23.1% when -0.05 eV < CBO < 0.05 eV.

含空位的二维GaN电子结构和光学性质的第一性原理研究

基于密度泛函理论,计算了二维GaN及其Ga、N空位体系的电子结构和光学性质,通过形成能的计算分析了空位缺陷体系的稳定性,然后进一步计算了各体系的电子结构,分析并讨论了空位缺陷对吸收光谱的影响。计算结果表明:Ga-N空位体系形成能最小,该结构最容易形成;Ga空位体系产生的缺陷能级使二维GaN呈现p型半导体特性,反之N空位缺陷呈现n型半导体特性,缺陷能级的出现有利于提高二维GaN电子迁移率以及光响应能力;各空位体系的吸收光谱均发生红移,其吸收系数在低能区域均大于本征二维GaN,这说明Ga、N空位的产生可以提升二维GaN对可见光的吸收能力。

某空气预热器钢板内部缺陷分析

某空气预热器Q235B牌号的钢板发现内部裂纹缺陷。对该钢板开展超声波探伤、化学成分分析、力学性能、宏观检查及金相分析。试验结果及分析表明:该钢板的力学性能和化学成分符合GB/T700-2006标准中Q235B的要求,金相组织和晶粒度符合材质特征,但内部存在宽度约为20mm的条带状缺陷,该缺陷为严重超标的A类夹杂物。

添加剂提高宽带隙钙钛矿太阳电池的性能

该文研究聚对苯乙烯磺酸钠(PSS)对宽带隙钙钛矿薄膜及电池的影响。研究发现PSS添加剂可改善宽带隙钙钛矿薄膜的形貌,提升结晶度并减少缺陷态密度,这有利于抑制混合卤素宽带隙钙钛矿薄膜的相分离问题。J-V测试结果表明钝化后的宽带隙钙钛矿太阳电池性能得到明显提升。在掺有PSS的宽带隙钙钛矿太阳电池中,开路电压最高可达1.23 V,效率最高可达20.54%,并且相分离被抑制后的封装钙钛矿太阳电池稳定性显著改善,在一个太阳连续光照500 h后,电池效率仍可保持在初始效率的81.9%(氮气环境,温度40℃)。

单靶磁控溅射Cu(In,Ga)Se_(2)太阳电池的背接触界面设计

通过磁控溅射单一四元靶材磁控得到的黄铜矿Cu(In,Ga)Se_(2)(CIGS)太阳电池开发的主要瓶颈是严重的载流子复合,其开路电压非常低.CIGS与钼(Mo)之间不良的缺陷环境是吸收体和界面复合严重的主要原因之一.其中,在背界面处引入的CuGaSe_(2)(CGS)低温缓冲层可以有效地抑制吸收体与背电极在高温磁控过程中的不利界面反应,从而获得高质量的晶体.通过这种背界面工程,不仅可以很好地解决吸收体和界面质量不佳的问题,而且有利于在吸收层中形成梯度带隙结构,从而使深能级InGa缺陷转换为较低能级的VCu缺陷,最终CIGS太阳电池的转换效率达到15.04%.这项工作为直接溅射高效率CIGS太阳电池的产业化提供了一种新的方法.

基于压电传感器的混凝土空洞缺陷发展与修复监测试验研究

为监测混凝土结构服役期间其空洞缺陷的发展情况、缺陷修复后混凝土的缺陷程度并判定相应的抗压强度,探索一种基于应力波的监测方法:将两枚压电传感器粘贴在混凝土试件表面,一枚作为致动器,另一枚作为传感器,利用信号源产生电压信号激励致动器产生应力波,同时测量试件在不同空洞缺陷直径下及缺陷修复后传感器的输出电压,引入输出电压的特征值,之后测试相应试块的抗压强度,建立特征值与混凝土抗压强度间的定量关系评价混凝土力学性能。通过有限元模型研究了混凝土在不同直径的空洞缺陷下应力波的传播特性,证明了幅值与相位表征混凝土缺陷程度的可行性,由此提出基于波飞行时间的损伤参数和基于幅值的能量指数评价混凝土缺陷状态。最后设计了混凝土空洞缺陷发展与修复监测试验,采用扫频信号和脉冲信号对试块进行监测并提取特征值(能量指数、损伤参数)评价混凝土缺陷修复前后的缺陷状态及抗压强度,验证了该方法的可行性并给出了不同激励信号的适用条件。

低碳出口材卷取工艺优化与应用

详细研究了不同卷取工艺下低碳出口材亮带缺陷变化情况,采用分组试验和实物跟踪方式,通过亮带发生位置及受力机理分析,找到亮带缺陷产生原因。经过多轮技术迭代,找到控制亮带缺陷的关键技术:开发尾部自动减张程序,优化卷取张力曲线;降低带钢的总张力、夹送辊和助卷辊的压力;定期清理夹送辊冷却水嘴,确保冷却均匀性,并缩短夹送辊换辊周期。通过以上措施,有效解决了亮带质量问题。

基于缺陷地和开口谐振环的三频段小型化天线

提出了一种新型三频段工作的小型微带贴片天线,天线采用不对称结构,在接地板上引入缺陷地结构(DGS)改变了天线表面电流分布,改善工作频率,衍生在无线局域网(WLAN)(2.4 GHz)处的频带。加载开口谐振环(SRR)金属环结构在独立控制WLAN(5.8 GHz)的频带的同时,减小了12%的天线体积。天线结构紧凑,整体尺寸为12.5 mm×28.5 mm×1.5 mm。结果表明,天线覆盖3个独立的阻抗带宽,分别为800 MHz(1.96~2.76 GHz),200 MHz(5.65~5.85 GHz)和1 460 MHz(7.64~9.1 GHz),在频段内的回波损耗均小于-10 dB,具有良好的方向性和增益,支持WLAN(5.8/2.4 GHz)频段和国际电信联盟(ITU)(8.0~8.7 GHz)频段的应用。

基于超表面的多通道窄带滤光片研究

针对传统多通道窄带滤光片存在尺寸大、通道选择性差的问题,该文设计了由分布式布拉格反射镜(DBR)和超表面微纳阵列组成的多通道窄带滤光片。利用传输矩阵法分析单侧DBR介质周期以及缺陷层折射率对透射光谱的影响,并优化了窄带滤光片结构。通过Comsol Multiphysics软件搭建窄带滤光片单元结构进行模拟仿真,研究了超表面以及入射角对窄带滤光片滤波特性的影响。仿真结果表明:通过调节超表面边长能够调控窄带滤光片的中心波长,在634 nm~714 nm的红光波段均可以获得一个带宽窄、透射率高的透射峰;每一个通道的的中心波长都可以通过调节超表面边长来调控,从而实现多个光谱通道的窄带滤光;入射光线小角度范围(0°~10°)内的变化对滤波性能的影响甚微。该结果为多通道窄带滤光片的设计提供了一条新的思路。

宽带隙钙钛矿太阳能电池预旋涂工艺研究

宽带隙钙钛矿太阳能电池是晶硅-钙钛矿叠层电池的主要组成部分。由于宽带隙钙钛矿材料存在缺陷密度大、相分离严重等问题,限制了宽带隙钙钛矿太阳能电池的发展。为改善这些问题,提出了一种预旋涂方法,即两步法制备钙钛矿薄膜,在碘化铅层表面均匀涂覆甲胺乙醇溶液(MES)+苯乙基碘化铵(PEAI)完成预旋涂工艺。通过预旋涂后,器件最佳效率为20.81%,优于未预旋涂器件(19.7%)及单一PEAI预旋涂处理器件(20.2%),同时也表现出优良的稳定性。

WAVELET METHOD FOR CALCULATING THE DEFECT STATES OF TWO-DIMENSIONAL PHONONIC CRYSTALS

Based on the variational theory, a wavelet-based numerical method is developed to calculate the defect states of acoustic waves in two-dimensional phononic crystals with point and line defects. The supercell technique is applied. By expanding the displacement field and the material constants （mass density and elastic stiffness） in periodic wavelets, the explicit formulations of an eigenvalue problem for the plane harmonic bulk waves in such a phononic structure are derived. The point and line defect states in solid-liquid and solid-solid systems are calculated. Comparisons of the present results with those measured experimentally or those from the plane wave expansion method show that the present method can yield accurate results with faster convergence and less computing time.