Analyzing the surface passivity effect of germanium oxynitride:a comprehensive approach through first principles simulation and interface state density

High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.

The interface density dependence of the electrical properties of 0.9Pb(Sc_(0.5)Ta_(0.5))O_3–0.1PbTiO_3/0.55Pb(Sc_(0.5)Ta_(0.5))O_3–0.45PbTiO_3 multilayer thin films

The 0.9Pb（Sc0.5Ta0.5）O3-0.1PbTiO3/0.55Pb（Sc0.5Ta0.5）O3-0.45 PbTiO3 multilayer thin films（（PSTT10/45）n, n = 1-6, 10） are deposited on SiO2/Si（100） substrates by radio frequency magnetron sputtering technique with La Ni O3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 μm-1, the film shows an optimized dielectric property（high dielectric constant, εr = 765, lowest dielectric loss, tan δ = 0.041, at 1 k Hz） and ferroelectric property（highest remnant polarization,2Pr = 36.9 μC/cm2, low coercive field, 2Ec = 71.9 k V/cm）. The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.

Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al2O3 Nanocomposite Films Based on IDC and SAXS

The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.

The Richtmyer-Meshkov instability of a double-layer interface in convergent geometry with magnetohydrodynamics

The interaction between a converging cylindrical shock and double density interfaces in the presence of a saddle magnetic field is numerically investigated within the framework of ideal magnetohydrodynamics.Three fluids of differing densities are initially separated by the two perturbed cylindrical interfaces.The initial incident converging shock is generated from a Riemann problem upstream of the first interface.The effect of the magnetic field on the instabilities is studied through varying the field strength.It shows that the Richtmyer-Meshkov and Rayleigh-Taylor instabilities are mitigated by the field,however,the extent of the suppression varies on the interface which leads to non-axisymmetric growth of the perturbations.The degree of asymmetry of the interfacial growth rate is increased when the seed field strength is increased.

Theoretical simulation of the effect of deformation on local gravity in a density gradient zone

We modeled the effect of the deformation of a Density Gradient Zone （DGZ） on a local gravity field using a cubical model and introduced a new method to simulate a complex DGZ （CDGZ）. Then, we analyzed the features of the model for the influence of the deformation of the DGZ on the local gravity field. We concluded that land-based gravity is not sensitive to the thickness of the DGZ and that the magnitude of the contribution of the DGZ is one order less than that of the volume strain with the same displacement.

Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact （IBC） silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters （doping concentration and thickness） is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si：H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density.

Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

Nitrogen plasma passivation （NPP） on （111） germanium （Ge） was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition （PECVD）. The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interracial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness （EOT） scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.

Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

Intrinsic hydrogenated amorphous silicon（a-Si：H） film is deposited on n-type crystalline silicon（c-Si） wafer by hotwire chemical vapor deposition（HWCVD） to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density（D_（it）） from lifetime measurement is proposed.The interface state density（D_（it）） measurement is also performed by using deep-level transient spectroscopy（DLTS） to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si：H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry（SE） and Fourier transform infrared spectroscopy（FTIR） respectively.Lower values of interface state density（D_（it）） are obtained by using a-Si：H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.

Fermi level pinning effects at gate–dielectric interfaces influenced by interface state densities

The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor（MOS） technology.

Tensile properties of phase interfaces in Mg Li alloy: A first principles study

Employing density functional theory, we study the tensile and fracture processes of the phase interfaces in Mg–Li binary alloy. The simulation presents the strain–stress relationships, the ideal tensile strengths, and the fracture processes of three phase interfaces. The results show that the α/α and α/β interfaces have larger tensile strength than that of β/β interface. The fractures of both α/α and β/β interfaces are ductile fractures, while the α/β fractures abruptly._Further analyses show that the fracture of the α/β occurs at the interface.

High-Pressure Oxidation on Ge:Improvement of Ge/GeO2 Interface and GeO2 Bulk Properties

On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.

A Component Selection Framework of Cohesion and Coupling Metrics

Component-based software engineering is concerned with the develop-ment of software that can satisfy the customer prerequisites through reuse or inde-pendent development.Coupling and cohesion measurements are primarily used to analyse the better software design quality,increase the reliability and reduced system software complexity.The complexity measurement of cohesion and coupling component to analyze the relationship between the component module.In this paper,proposed the component selection framework of Hexa-oval optimization algorithm for selecting the suitable components from the repository.It measures the interface density modules of coupling and cohesion in a modular software sys-tem.This cohesion measurement has been taken into two parameters for analyz-ing the result of complexity,with the help of low cohesion and high cohesion.In coupling measures between the component of inside parameters and outside parameters.Thefinal process of coupling and cohesion,the measured values were used for the average calculation of components parameter.This paper measures the complexity of direct and indirect interaction among the component as well as the proposed algorithm selecting the optimal component for the repository.The better result is observed for high cohesion and low coupling in compo-nent-based software engineering.

THE NONLINEAR BEHAVIOR OF INTERFACE BETWEEN TWO-PHASE SHEAR FLOW WITH LARGE DENSITY RATIOS

The Navier-Stokes equations for the two-dimensional incompressible flow are used to investigate the effects of the Reynolds number and the Weber number on the behavior of interface between liquid gas shear flow. In the present study, the density ratios are fixed at approximately 10^0-10^3. The interface between the two phases is resolved using the level-set approach. The Reynolds number and the Weber number, based on the gas, are selected as 400-10000 and 40-5000, respectively. In the past, simulations reappeared the amplitude of interface growth predicted by viscous Orr-Sommerfeld linear theory, verifying the applicability and accuracy of the numerical method over a wide range of density and viscosity ratios; now, the simulations show that the nonlinear development of ligament elongated structures and resulted in the subsequent breakup of the heavier fluid into drops.

GROUP VELOCITY CONTROL SCHEME WITH LOW DISSIPATION

In order to prevent smearing the discontinuity, a modified term is added to the third order Upwind Compact Difference scheme to lower the dissipation error. Moreover, the dispersion error is controled to hold back the non physical oscillation by means of the group velocity control. The scheme is used to simulate the interactions of shock density stratified interface and the disturbed interface developing to vortex rollers. Numerical results are satisfactory.

Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest Nt of 5.68×10^11 cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage（V（ON）） of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio（I（ON）/I（OFF）） of^8 x 10^8.With increasing Nt,the V（ON）,S.S and I（ON）/I（OFF） were suppressed to-9.40 V,0.24 V/dec and 2.59×10^8,respectively.The V（TH） shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in Nt contributes to an improvement in the electrical properties and stability.

Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

The evaluation of the influence of the bending deformation of silicon nanobridges on their electrical properties is crucial for sensing and actuating applications. A combined theory/experimental approach for de- termining the resistivity and the density of interface states of the bending silicon nanobridges is presented. The suspended p-type silicon nanobridge test structures were fabricated from silicon-on-insulator wafers by using a standard CMOS lithography and anisotropic wet etching release process. After that, we measured the resistance of a set of silicon nanobridges versus their length and width under different bias voltages. In conjunction with a theoretical model, we have finally extracted both the interface state density of and resistivity suspended silicon nanobridges under different bending deformations, and found that the resistivity of silicon nanobridges without bending was 9.45 mΩ.cm and the corresponding interface charge density was around 1.7445 × 10^13 cm-2. The bending deformation due to the bias voltage slightly changed the resistivity of the silicon nanobridge, however, it significantly changed the distribution of interface state charges, which strongly depends on the intensity of the stress induced by bending deformation.

Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs

In order to investigate the characteristics and mechanisms of subthreshold voltage hysteresis(ΔV_(th,sub)) of 4 H-SiC metal-oxide-semiconductor field-effect transistors(MOSFETs),4 H-SiC planar and trench MOSFETs and corresponding P-type planar and trench metal-oxide-semiconductor(MOS) capacitors are fabricated and characterized.Compared with planar MOSFEF,the trench MOSFET shows hardly larger ΔV_(th,sub) in wide temperature range from 25 0 C to 300 0 C.When operating temperature range is from 25 ℃ to 300 ℃,the off-state negative V_(gs) of planar and trench MOSFETs should be safely above-4 V and-2 V,respectively,to alleviate the effect of ΔV_(th,sub) on the normal operation.With the help of P-type planar and trench MOS capacitors,it is confirmed that the obvious ΔV_(th,sub) of 4 H-SiC MOSFET originates from the high density of the hole interface traps between intrinsic Fermi energy level(E_(i)) and valence band(E_(v)).The maximumΔV_(th,sub) of trench MOSFET is about twelve times larger than that of planar MOSFET,owing to higher density of interface states(D_(it)) between E_(i) and E_(v).These research results will be very helpful for the application of 4 H-SiC MOSFET and the improvement of ΔV_(th,sub) of 4 H-SiC MOSFET,especially in 4 H-SiC trench MOSFET.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy（SIMS） analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio Nit/Not are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo（kMC） method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.

Interfacial characteristics of Al/Al_2O_3/ZnO/n-GaAs MOS capacitor

The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor （MOS） capacitor are investigated. The results measured by X-ray photoelectron spectroscopy （XPS） and high-resolution transmission electron microscopy （HRTEM） show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.