The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs

The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies （Or） within the a-IGZO layer is suppressed by increasing Po2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po2. Therefore, the improved interface quality with increasing Po2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.

Fabrication of high-quality three-dimensional photonic crystal heterostructures

Three-dimensional photonic crystal （PC） heterostructures with high quality are fabricated by using a pressure controlled isothermal heating vertical deposition technique. The formed heterostructures have higher quality, such as deeper band gaps and sharper band edges, than the heterostructures reported so far. Such a significant improvement in quality is due to the introduction of a thin TiO2 buffer layer between the two constitutional PCs. It is revealed that the disorder caused by lattice mismatch is successfully removed if the buffer layer is used once. As a result, the formed heterostructures possess the main features in the band gap of constitutional PCs. The crucial role of the thin buffer layer is also verified by numerical simulations based on the finite-difference time-domain technique.

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [1120] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 ℃ and 10^4 Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy （AFM） and scanning electron microscopy （SEM）. Fourier transform infrared spectroscopy （FTIR） and x-ray diffraction （XRD） are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10^14 cm^-3 obtained by C-V measurements. Schottky barrier diodes （SBDs） are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.

Growth of large-area atomically thin MoS2 film via ambient pressure chemical vapor deposition

Atomically thin MoS2 films have attracted significant attention due to excellent electrical and optical properties.The development of device applications demands the production of large-area thin film which is still an obstacle.In this work we developed a facile method to directly grow large-area MoS2 thin film on Si O2 substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grown MoS2 film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on such MoS2 thin film shows carrier mobility up to 3.4 cm2V-1s-1 and on/off ratio of 105. The large-area atomically thin MoS2 prepared in this work has the potential for wide optoelectronic and photonic device applications.

Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering

Tungsten-doped zinc oxide（ZnO：W） films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature.The deposition pressure is varied from 12 to 21 Pa.The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation.The crystallinity,morphologies and resistivity of ZnO：W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure.The deposited films with an electrical resistivity as low as 1.5×10^（-4）Ω·cm,sheet resistance of 6.8Ω/□and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.

ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light

The intrinsic defects in epitaxial semi-insulating 4H-SiC prepared by low pressure chemical vapor deposition （LPCVD） are studied by electron spin resonance （ESR） with different illumination times. The results show that the intrinsic defects in as-grown 4H-SiC consist of carbon vacancy （Vc） and complex-compounds-related Vc. There are two other apexes presented in the ESR spectra after illumination by Xe light, which are likely to be Vsi and VcCsi. Illumination time changes the relative density of intrinsic defects in 4H-SiC; the relative density of intrinsic defects reaches a maximum when the illumination time is 2.5 min, and the ratio of Vc to complex compounds is minimized simultaneously. It can be deduced that some Vsi may be transformed to the complex-compounds-related Vc because of the illumination.

Growth of SiC as Binder to Adhere Diamond Particle and Tribological Properties of Diamond Particles Coated SiC

The purpose of this work was to grow SiC as binder to adhere diamond particles to graphite substrate by low pressure chemical vapor deposition （LPCVD） at 1100 ℃ and 100 Pa using methyltrichlorosilane （MTS： CH3SiCl3） as precursor. The composite coatings on graphite substrates were analyzed by various techniques. Results show that a dense SiC coating with a cloud-cluster shape was formed both on the diamond particles and the substrate after deposition, The thermal stress （290.6 MPa） strengthened the interfacial bonding between the diamond particle and the SiC coating, which is advantageous for the purpose of adhering diamond particles to graphite substrate. The applied load of sliding wear test was found to affect not only the friction coefficient, but also the wear surface morphology. With increasing loads, the asperity penetration was high and the friction coefficient decreased.

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition （LPCVD） are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems （MEMS） devices, especially in high resonance frequency （high-f） and high quality factor （high-Q） MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process （〉 1000 ℃）, and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.