P-Type NiO foam with rough nanostructured surface was prepared by the surface treatment of Ni foam,and then it was decorated with n-type ZnO nanopyramids to construct a 3D p–n junction foam. The p–n junction foam wa...P-Type NiO foam with rough nanostructured surface was prepared by the surface treatment of Ni foam,and then it was decorated with n-type ZnO nanopyramids to construct a 3D p–n junction foam. The p–n junction foam was used for electrochemical detection of dopamine and the sensing performance was improved significantly compared with the single NiO and ZnO. High sensitivity（171 mμA/mmol/L）, fast response（2 s）, excellent selectivity and stability were achieved. It was attributed to the introduction of numerous p–n junction interfaces, the interfacial potential barrier played as a tuning factor for the electrochemical determination of dopamine. The results demonstrated it would be an important way to improve the biosensing performance by introducing the p–n junction interfaces.展开更多
基金sponsored by Qingdao City Programs for Scienceand Technology Plan Projects(No.15-9-1-82-jch)National Natural Science Foundation of China(No.51572249)+1 种基金Fundamental Research Funds for the Central University(No.201513008)Natural Science Foundation of Shandong Province(No.ZR2014EMM021)
文摘P-Type NiO foam with rough nanostructured surface was prepared by the surface treatment of Ni foam,and then it was decorated with n-type ZnO nanopyramids to construct a 3D p–n junction foam. The p–n junction foam was used for electrochemical detection of dopamine and the sensing performance was improved significantly compared with the single NiO and ZnO. High sensitivity（171 mμA/mmol/L）, fast response（2 s）, excellent selectivity and stability were achieved. It was attributed to the introduction of numerous p–n junction interfaces, the interfacial potential barrier played as a tuning factor for the electrochemical determination of dopamine. The results demonstrated it would be an important way to improve the biosensing performance by introducing the p–n junction interfaces.
