Characterization of power transistors is an indispensable step in the design of radio frequency and mi- crowave power amplifiers. A full harmonic load-pull measurement setup is normally required for the accurate and c...Characterization of power transistors is an indispensable step in the design of radio frequency and mi- crowave power amplifiers. A full harmonic load-pull measurement setup is normally required for the accurate and comprehensive characterization of RF power transistors. The setup is usually highly complex, leading to a rela- tively high hardware cost and low measurement throughput. This paper presents X-parameter measurement on a gallium nitride （GaN） high-electron-mobility transistor and studies the potential of utilizing an X-parameter-based modeling technique to highly reduce the complexity of the harmonic load-pull measurement setup for transistor characterization. During the X-parameter measurement and characterization, load impedance of the device is tuned and controlled only at the fundamental frequency and is left uncontrolled at other higher harmonics. However, it proves preliminarily that the extracted X-parameters can still predict the behavior of the device with moderate to high accuracy, when the load impedance is tuned up to the third-order harmonic frequency. It means that a fundamental-only load-pull test setup is already enough even though the device is to be characterized under load tuning up to the third-order harmonic frequency, by utilizing X-parameters.展开更多
A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach- Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the hi...A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach- Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the high-speed perfor- mance. Over a broadband wavelength range, high-speed operation up to 30 Gbit/s with a 4.5 dB-5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.展开更多
文摘Characterization of power transistors is an indispensable step in the design of radio frequency and mi- crowave power amplifiers. A full harmonic load-pull measurement setup is normally required for the accurate and comprehensive characterization of RF power transistors. The setup is usually highly complex, leading to a rela- tively high hardware cost and low measurement throughput. This paper presents X-parameter measurement on a gallium nitride （GaN） high-electron-mobility transistor and studies the potential of utilizing an X-parameter-based modeling technique to highly reduce the complexity of the harmonic load-pull measurement setup for transistor characterization. During the X-parameter measurement and characterization, load impedance of the device is tuned and controlled only at the fundamental frequency and is left uncontrolled at other higher harmonics. However, it proves preliminarily that the extracted X-parameters can still predict the behavior of the device with moderate to high accuracy, when the load impedance is tuned up to the third-order harmonic frequency. It means that a fundamental-only load-pull test setup is already enough even though the device is to be characterized under load tuning up to the third-order harmonic frequency, by utilizing X-parameters.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2012AA012202)the National Basic Research Program of China(Grant No.2011CB301701)+1 种基金the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant No.KGCX2-EW-102)the National Natural Science Foundation of China(Grant Nos.61107048 and 61275065)
文摘A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach- Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the high-speed perfor- mance. Over a broadband wavelength range, high-speed operation up to 30 Gbit/s with a 4.5 dB-5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.
