The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable den...The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable density were directly introduced thirough a submicrondiamond powder layer. The diamond grits partially were buried in the copper substrate leadingto better adhesion. Another method with nickel intermediate layer for enhancing the adhesionwas studied here in detail. It was suggested that Cu-Ni eutectic between the copper substrate andNi interlayer might contribute to the adhesion improvement. The quality of the diamond filmsdeposited wlth rnckel interlayer was investigated by scanning electron microscopy and Ramanspectroscopy.展开更多
As electronic packages become more compact, run at faster speeds and dissipate more heat, package designers need more effective thermal management materials. CVD diamond, because of its high thermal conductivity, low ...As electronic packages become more compact, run at faster speeds and dissipate more heat, package designers need more effective thermal management materials. CVD diamond, because of its high thermal conductivity, low dielectric loss and its great mechanical strength, is an excellent material for three dimensional （319） multichip modules （MCMs） in the next generation compact high speed computers and high power microwave components. In this paper, we have synthesized a large area freestanding diamond films and substrates, and polished diamond substrates, which make MCMs diamond film sink becomes a reality.展开更多
文摘The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable density were directly introduced thirough a submicrondiamond powder layer. The diamond grits partially were buried in the copper substrate leadingto better adhesion. Another method with nickel intermediate layer for enhancing the adhesionwas studied here in detail. It was suggested that Cu-Ni eutectic between the copper substrate andNi interlayer might contribute to the adhesion improvement. The quality of the diamond filmsdeposited wlth rnckel interlayer was investigated by scanning electron microscopy and Ramanspectroscopy.
基金Supported by National Natural Science Foundation of China (No.60371006)
文摘As electronic packages become more compact, run at faster speeds and dissipate more heat, package designers need more effective thermal management materials. CVD diamond, because of its high thermal conductivity, low dielectric loss and its great mechanical strength, is an excellent material for three dimensional （319） multichip modules （MCMs） in the next generation compact high speed computers and high power microwave components. In this paper, we have synthesized a large area freestanding diamond films and substrates, and polished diamond substrates, which make MCMs diamond film sink becomes a reality.
