扩展角对Diamond-Jet型超音速火焰喷涂流场的影响

采用计算流体力学方法对超音速火焰喷涂过程进行数值模拟，研究了扩展角的变化对燃烧场的影响。研究发现扩展角对马赫锥形成的位置具有影响，随着扩展角的变化，马赫锥产生的位置向燃烧室方向偏移，当扩展角为0°～3．0°时，最大马赫数随扩展角度增大而增大。研究了扩展角对Diamond—Jet喷枪的温度场影响，当扩展角为0°～1．0°时，温度随扩展角的增加而降低，燃烧能转化为气体的动能；但是当扩展角度继续增加时，温度不再降低。

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

This paper used optical emission spectroscopy （OES） to study the gas phase in high power DC arc plasma jet chemical vapour deposition （CVD） during diamond films growth processes. The results show that all the deposition parameters （methane concentration, substrate temperature, gas flow rate and ratio of H2/Ar） could strongly influence the gas phase. C2 is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C2 and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C2 is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.

Diamond Film Synthesis with a DC Plasma Jet:Effect of the Contacting Interface between Substrate and Base on the Substrate Temperature

The contacting interface between the substrate and water-cooled base is vital to the substrate temperature during diamond films deposition by a DC （direct current） plasma jet. The effects of the solid contacting area,conductive materials and fixing between the substrate and the base were investigated without affecting the other parameters. Experimental results indicated that the preferable solid contacting area was more than 60% of total contacting areal; the particular Sn-Pb alloy was more suitable for conducting heat and the concentric fixing ring was a better setting for controlling the substrate temperature. The result was explained in terms of the variable thermal contact resistance at the interface between substrate and base. The diamond films were analyzed by scanning electron microscopy （SEM） for morphology, X-ray diffraction （XRD） for the intensity of characteristic spectroscopy and Raman spectroscopy for structure.

Preparation and Characterization of High Quality Diamond Films by DC ArcPlasma Jet CVD Method

Under optimal conditions free-standing high quality diamond films were prepared by DC arc plasma jet CVD method at a growth rate of 7-10 Pm/h. Surface and cross section morphologies of the diamond films were observed by SEM. Raman spectrometer wasused to characterize the quality of diamond films. The IR transmittivity measured by IR spectrometer is close to the theoretical value ofabout 71% in the far infrared band. The thermal conductivity measured by photothermal deflection exceeds 18 W/cm' K. <l 10> is thepreferential growth orientation of the films detected by X-ray diffractometer. As s result, the extremely high temperature of DC arc plasma jet can produce supersaturated atomic hydrogen, which played an important role in the process for the deposition of high quality diamond films.

Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition

The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K·cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition(CVD) were examined using a low-temperature photoluminescence(PL) technique. The results show that most of the nitrogen-vacancy(NV) complexes are present as NV-centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N_2 incorporation and the high mobility of vacancies under growth temperatures of 950–1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy(Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition(MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV-centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.

DIAMOND FILMS MADE BY DC PLASMA JET

This paper is about the diamond films fabricated by dc plasma jet method. Scanning electron microscopy(SEM), X-ray diffractometry and Roman scattering spectroscopy have been used to characterize the diamond films deposited under different experimental conditions and different substrates.

DIAMOND PORT JET INTERACTION WITH SUPERSONIC FLOW

Interaction flow field of the sonic air jet through diamond shaped orifices at different incidence angles （10 degrees, 27.5 degrees, 45 degrees and 90 degrees） and total pressures （0.10 MPa and 0. 46 MPa） with a Mach 5.0 freestream was studied experimentally. A 90 degrees circular injector was examined for comparison. Crosssection Mach number contours were acquired by a Pitot-cone five-hole pressure probe. The results indicate that the low Mach semicircular region close to the wall is the wake region. The boundary layer thinning is in the areas adjacent to the wake. For the detached case, the interaction shock extends further into the freestream, and the shock shape has more curvature, also the low-Mach upwash region is larger. The vortices of the plume and the height of the jet interaction shock increase with increasing incidence angle and jet pressure. 90 degrees diamond and circular injector have stronger plume vorticity, and for the circular injector low-Mach region is smaller than that for the diamond injector. Tapered ramp increases the plume vorticity, and the double ramp reduces the level of vorticity. The three-dimensional interaction shock shape was modeled from the surface shock shape, the center plane shock shape, and crosssectional shock shape. The shock total pressure was estimated with the normal component of the Mach number using normal shock theory. The shock induced total pressure losses decrease with decreasing jet incidence angle and injection pressure, where the largest losses are incurred by the 90 degrees, circular injector.

Diagnosis of gas phase near the substrate surface in diamond film deposition by high-power DC arc plasma jet CVD

Optical emission spectroscopy （OES） was used to study the gas phase composition near the substrate surface during diamond deposition by high-power DC arc plasma jet chemical vapor deposition （CVD）. C2 radical was determined as the main carbon radical in this plasma atmosphere. The deposition parameters, such as substrate temperature, anode-substrate distance, methane concentration, and gas flow rate, were inspected to find out the influence on the gas phase. A strong dependence of the concentrations and distribution of radicals on substrate temperature was confirmed by the design of experiments （DOE）. An explanation for this dependence could be that radicals near the substrate surface may have additional ionization or dissociation and also have recombination, or are consumed on the substrate surface where chemical reactions occur.

采用DC Arc Plasma JetCVD方法沉积微/纳米复合自支撑金刚石膜

在30kW级直流电弧等离子体喷射化学气相沉积(DC Arc P lasm a Jet CVD)设备上,采用Ar-H2-CH4混合气体,通过调节甲烷浓度以及控制其他沉积参数,在Mo衬底上沉积出微/纳米复合自支撑金刚石膜。实验表明,当微米金刚石膜层沉积结束后,在随后的沉积中,随着甲烷浓度的增加,金刚石膜表面的晶粒大小是逐渐减小的。当甲烷浓度达到20%以上时,金刚石膜生长面晶粒呈现菜花状的小晶团,膜体侧面已经没有了粗大的柱状晶,而是呈现出光滑的断口,对该层进行拉曼谱分析显示,位于1145 cm-1附近有一定强度的散射峰出现。这说明所沉积的晶粒全部变为纳米级尺寸。

Study on the Dielectric Properties of Chemical Vapor Deposited Diamond Film

Aim To study the dielectric properties of diamond film. Methods Dielectric properties (the frequency dependenCe of conductance, permittivity, and loss factor) of diamond film preped by DC are plasma jet chemical vapor deposition (CVD) were studied. Resuls Dielectric properties of CVD diamond fAn depend mainly on its polycrystalline nature, and the presence of non-diamond disordered graphitic regions and impurities between diamond grains of the film. Annealing at 500℃ leads to the removal of greater part of disordered graphitic regions, but am not remove all disordered graphitic regions and impurities. Conclusion Much work nab to be done tO prepare or post-treat diamond films before using CVD diamond as a substrate for electronic devices.

金刚石涂层游动芯头制备及其在铜管生产中的应用

通过沉积方式和旋转装置设计,采用直流电弧等离子体喷射法在硬质合金游动芯头表面均匀沉积金刚石涂层,并利用白光干涉仪、扫描电子显微镜、Raman光谱仪和压痕法对涂层的表面粗糙度、形貌、质量均匀性和膜–基附着力等进行测试分析。结果表明:金刚石涂层抛光后的表面平均粗糙度S_(a)为76.4 nm,金刚石涂层脱落位置到压痕中心的平均距离为287.9μm,且各位置的金刚石涂层厚度均匀性和质量均较好。将制备的金刚石涂层游动芯头应用于高精度精密铜管生产线中,与硬质合金游动芯头对比,其在降低劳动强度、保证铜管一致性和延长芯头使用寿命方面都有显著效果。

大孔径不锈钢薄壁焊管金刚石涂层拉拔模具制备及应用

研究了利用直流电弧等离子体喷射法,在硬质合金拉拔模具表面沉积CVD金刚石涂层。采用孔径测量仪、接触式粗糙度仪和Raman光谱仪对金刚石涂层厚度、表面粗糙度和质量进行了测试分析。结果表明:金刚石涂层厚度d为24.5μm,沉积速率v为2.45μm/h,抛光后定径区表面平均粗糙度Ra为46 nm,拉拔模具入口区、压缩区和定径区在1 332 cm~(-1)附近都有明显的金刚石涂层特征峰。将制备的金刚石涂层拉拔模具应用于不锈钢焊管生产线中,经与硬质合金拉拔模具对比,使用寿命提高200倍,并在环保、降低劳动强度和管材一致性上都有了明显的优势。

大尺寸低损耗金刚石窗片制备及微波窗口封接

为满足长脉冲大功率回旋管研制需求,采用直流电弧等离子体喷射化学气相沉积法合成大尺寸低损耗金刚石厚膜窗片;通过表面金属化和钎焊工艺进行微波窗口的封接。采用法布里-玻罗(Fabry-Perot)开放激励腔、激光导热仪、三维轮廓仪、激光干涉仪等对金刚石窗片介电损耗、热导率、表面平坦度、粗糙度等性能参数进行了表征;采用氦质谱检漏仪、高功率长脉冲微波测试平台测试了窗口气密性和微波吸收特性。实验结果表明,抛光厚度1.36 mm的金刚石窗片具有高尺寸精度,热导率达到17.9~18.7 W·cm^(-1)·K^(-1);波导窗片介电损耗tanδ=1.76×10^(-4),回旋管窗片tanδ=2.6×10^(-4)。计算结果表明,在1 MW微波输入功率下波导窗损耗功率约2.34 kW,窗片中心热应力在安全数值内,相同损耗功率条件下回旋管窗口可承受至少680 kW的输出功率。

菱形自由射流与圆形自由射流流动特性的粒子图像测速研究

针对菱形和圆形2种不同出口形状的孔板自由射流,在出口雷诺数Re 72 000(速度使用射流平均出口速度Ue,特征长度使用当量直径De)的情况下应用粒子图像测速(particle image velocimetry,PIV)技术对空气射流在初始段和过渡段的流场进行测量,并对2种不同形状出口的射流流动特性进行对比分析。结果表明:与圆形自由射流相比,菱形自由射流有更强的混合和卷吸周围流体的能力,具体表现在菱形自由射流的势流核更短,速度衰减和扩散更快以及湍流强度更大;另外,在菱形射流中还出现了长短轴半值宽变换的现象。

直流电弧等离子体喷射在金刚石膜制备和产业化中的应用

综述了北京科技大学在直流电弧等离子体喷射CVD金刚石膜沉积系统研制和改进及大面积高质量(包括光学级)金刚石自支撑膜沉积的研究进展和产业化状况。用同样技术研发出了可用于复杂形状硬质合金工具金刚石膜涂层工具批量生产的强电流直流伸展电弧等离子体CVD金刚石膜涂层系统,讨论了利用该设备研发金刚石膜涂层硬质合金工具及其现场切削试验的结果。

直流等离子体喷射制备无裂纹自支撑金刚石膜体的晶体组织设计(英文)

在自支撑金刚石膜体中发现网状、河流状和环状三种裂纹形式 ,这几种裂纹形式依沉积温度不同而不同。首次采用了原子力显微镜分析了金刚石自支撑膜体裂纹断裂机制 ,发现了穿晶断裂和沿晶断裂两种机制 ,其中 ,在网状裂纹中 ,穿晶断裂机制占主要地位 ;环状裂纹中 ,沿晶断裂机制占主要地位 ,而河流状裂纹是两种机制的混合。对应X射线衍射结果 ,(111)晶面占优的膜体易于开启穿晶断裂机制 ,(2 2 0 )晶面占优的膜体易于开启沿晶断裂机制。使用Raman谱测试的膜体中的本征应力在几十到几百MPa之间 ,且在膜体中存在应力剖面分布。Raman谱的结果还显示低缺陷的膜体组织有利于阻挡裂纹扩展。通过建立简单力学分析模型 ,推测了膜体组织对断裂强度的作用。根据实验结果和力学模型 ,制备了最厚 2mm、最大直径 12 0mm的无裂纹自支撑金刚石膜。

大面积球面金刚石膜的均匀沉积研究

利用直流电弧等离子体喷射法沉积装置在底径65 mm、高5 mm的Mo球面衬底上制备出厚度大于500μm金刚石膜。用千分尺测量膜径向厚度以判断膜厚均匀性,用SEM观察膜的表面形貌,用拉曼谱仪测量膜的表面纯度,通过分析电镜形貌和拉曼谱峰的分布特点来判断金刚石膜的质量均匀性。结果表明,在优化工艺条件下,直流电弧等离子体喷射法设备可以在球面Mo衬底上生长出厚度和质量都比较均匀的半透光的自支撑球面金刚石厚膜。

直流电弧等离子体喷射金刚石厚膜生长不稳定性问题

采用高功率直流电弧等离子体CVD工艺制备了不同厚度的金刚石自支撑膜。观察到在金刚石厚膜生长过程中出现形貌不稳定性 ,并往往导致膜层组织疏松 ,强度降低。本文从理论和实验观察两个方面进行了讨论。生长不稳定性在任何高速沉积CVD过程中都可能发生 ,而直流电弧等离子体的高温造成碳源高饱和度以及高温等离子体射流对衬底表面的冲击 ,使之比其它CVD金刚石膜沉积工艺具有更大的不稳定生长倾向。基于实验研究结果 ,建议在较低的气体压力下沉积 。

直流等离子体法中脱膜开裂的金刚石膜组织结构分析

为了解决用直流等离子体喷射法制备金刚石膜在脱膜过程中膜体开裂的问题,本文对3组脱膜开裂的金刚石膜组织结构进行了分析,发现由热应力作用产生的裂纹形貌随沉积温度的不同而呈现网状、河流状和环状,裂纹尖端的膜体具有最小的Raman谱峰半高宽值。在所研究的温度范围内,膜体断口都是穿晶断裂和沿晶断裂的混合断口,而且断口面中的占优晶面都是[111]晶面。X射线和Raman谱结果还表明沉积温度愈高,膜体中的残余应力愈大。