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OSCILLATION THEOREMS FOR SECOND ORDER NONLINEAR DIFFERENTIAL EQUATIONS WITH DAMPING
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作者 陈伯山 《Acta Mathematica Scientia》 SCIE CSCD 1991年第4期409-416,共8页
Some new oscillation theorems are established for the second order nonlinear differential equations with damping of the form where p(t) and q(t) are allowed to change sign on [t0,∞).
关键词 OSCILLATION THEOREMS FOR SECOND ORDER NONLINEAR differential EQUATIONS WITH DAMPING
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OSCILLATION AND ASYMPTOTIC BEHAVIOR OF SOME SECOND-ORDER RETARDED DIFFERENTIAL EQUATIONS
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作者 王明新 张秦 《Acta Mathematica Scientia》 SCIE CSCD 1991年第4期433-441,共9页
In this paper, we consider the following second order retarded differential equations x″(t)+cx′(t)=qx(t-σ)-lx(t-δ) (1) x″(t)+p(t)x(t-τ)=0 (2) We give some sufficient conditions for the oscillation of all solutio... In this paper, we consider the following second order retarded differential equations x″(t)+cx′(t)=qx(t-σ)-lx(t-δ) (1) x″(t)+p(t)x(t-τ)=0 (2) We give some sufficient conditions for the oscillation of all solutions of Eq. (1) in the case where q, ι, σ, δ are positive numbers and c is a real number. And also, we study the asymptotic behavior of the nonoscillatory solutions. If necessary, we give some examples to illustrate our results. At last, we study Eq. (2) with some conditions on p(t). 展开更多
关键词 OSCILLATION AND ASYMPTOTIC BEHAVIOR OF SOME SECOND-ORDER RETARDED differential EQUATIONS
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A 1.0 V differential VCO in 0.13 μm CMOS technology 被引量:1
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作者 曹圣国 韩科锋 +2 位作者 谈熙 闫娜 闵昊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第2期126-129,共4页
A differential complementary LC voltage controlled oscillator (VCO) with high Q on-chip inductor is presented. The parallel resonator of the VCO consists of inversion-mode MOS (I-MOS) capacitors and an on-chip ind... A differential complementary LC voltage controlled oscillator (VCO) with high Q on-chip inductor is presented. The parallel resonator of the VCO consists of inversion-mode MOS (I-MOS) capacitors and an on-chip inductor. The resonator Q factor is mainly limited by the on-chip inductor. It is optimized by designing a single turn inductor that has a simulated Q factor of about 35 at 6 GHz. The proposed VCO is implemented in the SMIC 0.13μm 1P8M MMRF CMOS process, and the chip area is 1.0 ×0.8 mm2. The free-running frequency is from 5.73 to 6.35 GHz. When oscillating at 6,35 GHz, the current consumption is 2.55 mA from a supply voltage of 1.0 V and the measured phase noise at 1 MHz offset is -120.14 dBc/Hz. The figure of merit of the proposed VCO is -192.13 dBc/Hz. 展开更多
关键词 differential voltage controlled oscillator CMOS inversion-mode MOS capacitors on-chip inductors
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A 5 GHz CMOS frequency synthesizer with novel phase-switching prescaler and high-Q LC-VCO 被引量:1
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作者 曹圣国 杨玉庆 +2 位作者 谈熙 闫娜 闵昊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第8期98-103,共6页
A phase-locked loop(PLL) frequency synthesizer with a novel phase-switching prescaler and a high-Q LC voltage controlled oscillator(VCO) is presented.The phase-switching prescaler with a novel modulus control mech... A phase-locked loop(PLL) frequency synthesizer with a novel phase-switching prescaler and a high-Q LC voltage controlled oscillator(VCO) is presented.The phase-switching prescaler with a novel modulus control mechanism is much more robust on process variations.The Q factor of the inductor,I-MOS capacitors and varactors in the VCO are optimized.The proposed frequency synthesizer was fabricated by SMIC 0.13μm 1P8M MMRF CMOS technology with a chip area of 1150×2500μm^2.When locking at 5 GHz,the current consumption is 15 mA from a supply voltage of 1.2 V and the measured phase noise at a 1 MHz offset is -122.45 dBc/Hz. 展开更多
关键词 PLL frequency synthesizer differential voltage controlled oscillator phase-switching prescaler CMOS
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