Through eliminating voids not affecting the primary bonding process, and incorporating interlayer and flexible base material, the interface geometry character and brief mathematics process were put forth. Through anal...Through eliminating voids not affecting the primary bonding process, and incorporating interlayer and flexible base material, the interface geometry character and brief mathematics process were put forth. Through analyzing contact process of diffusion bonding, contact area model was settled. It can interpret the phenomenon of different interface areas taking on different strengths. In the course of physical contact, shear stresses serve an important function for the plastic deformation and the cohesion of interface voids.展开更多
In many circumstances,dissimilar metals have to be bonded together and the resulting joint interfaces must typically sustain mechanical and/or electrical forces without failure,which is not possible by fusion welding ...In many circumstances,dissimilar metals have to be bonded together and the resulting joint interfaces must typically sustain mechanical and/or electrical forces without failure,which is not possible by fusion welding processes.The melting points of magnesium(Mg)and copper(Cu)have a significant difference(nearly 400℃)and this may lead to a large difference in the microstructure and joint performance of Mg-Cu joints.However,diffusion bonding can be used to join these alloys without much difficulty.This work analyses the effect of parameters on diffusion layer thickness,hardness and strength of magnesium-copper dissimilar joints.The experiments were conducted using three-factor,five-level,central composite rotatable design matrix.Empirical relationships were developed to predict diffusion layer thickness,hardness and strength using response surface methodology.It is found that bonding temperature has predominant effect on bond characteristics.Joints fabricated at a bonding temperature of 450℃, bonding pressure of 12 MPa and bonding time of 30 min exhibited maximum shear strength and bonding strength of 66 and 81 MPa, respectively.展开更多
Ti-6Al-4V(wt.%) and Ti-22Al-25Nb(at.%) were joined by diffusion bonding at 950 ℃ and 15 MPa for 100 min, and the microstructure and mechanical properties of the resulting joints were investigated. The composition of ...Ti-6Al-4V(wt.%) and Ti-22Al-25Nb(at.%) were joined by diffusion bonding at 950 ℃ and 15 MPa for 100 min, and the microstructure and mechanical properties of the resulting joints were investigated. The composition of the diffusion layer is B2/discontinuous α/α2 layer/necklace-shaped β+α’ layer, where the content of any element at a given point mainly depends on the distance of the point from the interface and the phase type at the point. The tensile strength of the joint is 894 MPa, which is almost the same as that of the Ti-22Al-25Nb base alloy. The fracture surfaces on both sides of the joint are composed of two main regions. One region displays a relatively flat surface and fractures along the bonding interface. The other is composed of a moderate number of irregularly-shaped cavities on the Ti-6Al-4V side and many irregularly-shaped bulges on the Ti-22Al-25Nb side. Both regions result from fracture along the boundaries between β+α’ layers and αp grains or from the transcrystalline fracture of αp grains.展开更多
The atom (Ag,Cu) diffusion behavior and the effect of technology on the interface of rolled Ag/Cu composite contact were investigated. The concentration of Ag and Cu atoms near the interface was determined with electr...The atom (Ag,Cu) diffusion behavior and the effect of technology on the interface of rolled Ag/Cu composite contact were investigated. The concentration of Ag and Cu atoms near the interface was determined with electron probe. The bonding strength of composite interface was tested and the fracture in tensile sample was observed by SEM. The results show that there was inter diffusion of Ag and Cu atoms on the interface, which formed compact layer with high bonding strength of 98 MPa. The practical application proved that the Ag/Cu composite interface is reliable.展开更多
Cu/Al bar clad material was fabricated by a drawing process and a subsequent heat treatment.During these processes,intermetallic compounds have been formed at the interface of Cu/Al and have affected its bonding prope...Cu/Al bar clad material was fabricated by a drawing process and a subsequent heat treatment.During these processes,intermetallic compounds have been formed at the interface of Cu/Al and have affected its bonding property.Microstructures of Cu/Al interfaces were observed by OM,SEM and EDX Analyser in order to investigate the bonding properties of the material.According to the microstructure a series of diffusion layers were observed at the interface and the thicknesses of diffusion layers have increased with aging time as a result of the diffusion bonding.The interfaces were composed of 3-ply diffusion layers and their compositions were changed with aging time at 400 °C.These compositional compounds were revealed to be η2,(θ+η2),(α+θ) intermetallic phases.It is evident from V-notch impact tests that the growth of the brittle diffusion layers with the increasing aging time directly influenced delamination distance between the Cu sleeve and the Al core.It is suggested that the proper holding time at 400 °C for aging as post heat treatment of a drawn Cu/Al bar clad material would be within 1 h.展开更多
Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo...Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.展开更多
Skutterudite(SKD)thermoelectric materials have high conversion efficiency,great mechanical proper-ties,and economical practicability in the medium temperature range(500e550C).They need to bejoined with metal electrode...Skutterudite(SKD)thermoelectric materials have high conversion efficiency,great mechanical proper-ties,and economical practicability in the medium temperature range(500e550C).They need to bejoined with metal electrodes to form a thermoelectric power generation device during application.However,high contact resistivity,severe element diffusion,and large coefficient of thermal expansionmismatch are main obstacles for their applications.To address these issues,a FeCoNiCrMo high-entropyalloy diffusion barrier layer was designed and prepared using an arc smelting method in this paper.Effectof heating temperatures on the microstructure and properties of the bonded joints were investigated.The maximum shear strength was 21.6 Mpa and the corresponding reaction layer thickness,contactresistivity were 3.77 mm,1.8 mUcm2 respectively at 600C,40 MPa,10 min.Shear strength dropped downto 18.8 MPa and the contact resistivity increased to 4.2 mU cm2 after aging for 640 h.Numerical modelwas established and it predicted that the contact resistivity would keep lower than 6.5 mU cm2(300 h,100 days)and 11 mU cm2(8760 h,1 year)and the reaction layer thickness would not exceed 25 mm(2400 h,100 days)and 45 mm(8760 h,1 year).展开更多
文摘Through eliminating voids not affecting the primary bonding process, and incorporating interlayer and flexible base material, the interface geometry character and brief mathematics process were put forth. Through analyzing contact process of diffusion bonding, contact area model was settled. It can interpret the phenomenon of different interface areas taking on different strengths. In the course of physical contact, shear stresses serve an important function for the plastic deformation and the cohesion of interface voids.
基金support rendered through a Major Research Project No. F-31-51/2005(SR)
文摘In many circumstances,dissimilar metals have to be bonded together and the resulting joint interfaces must typically sustain mechanical and/or electrical forces without failure,which is not possible by fusion welding processes.The melting points of magnesium(Mg)and copper(Cu)have a significant difference(nearly 400℃)and this may lead to a large difference in the microstructure and joint performance of Mg-Cu joints.However,diffusion bonding can be used to join these alloys without much difficulty.This work analyses the effect of parameters on diffusion layer thickness,hardness and strength of magnesium-copper dissimilar joints.The experiments were conducted using three-factor,five-level,central composite rotatable design matrix.Empirical relationships were developed to predict diffusion layer thickness,hardness and strength using response surface methodology.It is found that bonding temperature has predominant effect on bond characteristics.Joints fabricated at a bonding temperature of 450℃, bonding pressure of 12 MPa and bonding time of 30 min exhibited maximum shear strength and bonding strength of 66 and 81 MPa, respectively.
基金the financial supports from the National Natural Science Foundation of China(No.51505323)State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,China(No.AWJ-17M-04).
文摘Ti-6Al-4V(wt.%) and Ti-22Al-25Nb(at.%) were joined by diffusion bonding at 950 ℃ and 15 MPa for 100 min, and the microstructure and mechanical properties of the resulting joints were investigated. The composition of the diffusion layer is B2/discontinuous α/α2 layer/necklace-shaped β+α’ layer, where the content of any element at a given point mainly depends on the distance of the point from the interface and the phase type at the point. The tensile strength of the joint is 894 MPa, which is almost the same as that of the Ti-22Al-25Nb base alloy. The fracture surfaces on both sides of the joint are composed of two main regions. One region displays a relatively flat surface and fractures along the bonding interface. The other is composed of a moderate number of irregularly-shaped cavities on the Ti-6Al-4V side and many irregularly-shaped bulges on the Ti-22Al-25Nb side. Both regions result from fracture along the boundaries between β+α’ layers and αp grains or from the transcrystalline fracture of αp grains.
文摘The atom (Ag,Cu) diffusion behavior and the effect of technology on the interface of rolled Ag/Cu composite contact were investigated. The concentration of Ag and Cu atoms near the interface was determined with electron probe. The bonding strength of composite interface was tested and the fracture in tensile sample was observed by SEM. The results show that there was inter diffusion of Ag and Cu atoms on the interface, which formed compact layer with high bonding strength of 98 MPa. The practical application proved that the Ag/Cu composite interface is reliable.
基金Project supported by the Fundamental Materials Development funded by the Korean Ministry of Knowledge Economy
文摘Cu/Al bar clad material was fabricated by a drawing process and a subsequent heat treatment.During these processes,intermetallic compounds have been formed at the interface of Cu/Al and have affected its bonding property.Microstructures of Cu/Al interfaces were observed by OM,SEM and EDX Analyser in order to investigate the bonding properties of the material.According to the microstructure a series of diffusion layers were observed at the interface and the thicknesses of diffusion layers have increased with aging time as a result of the diffusion bonding.The interfaces were composed of 3-ply diffusion layers and their compositions were changed with aging time at 400 °C.These compositional compounds were revealed to be η2,(θ+η2),(α+θ) intermetallic phases.It is evident from V-notch impact tests that the growth of the brittle diffusion layers with the increasing aging time directly influenced delamination distance between the Cu sleeve and the Al core.It is suggested that the proper holding time at 400 °C for aging as post heat treatment of a drawn Cu/Al bar clad material would be within 1 h.
基金supported by the National Key R&D Program of China(no.2018YFE0203400)the National Natural Science Foundation of China(no.62074102)+1 种基金the Guangdong Basic and Applied Basic Research Foundation(no.2022A1515010979)the Science and Technology plan project of Shenzhen(nos.JCYJ20190808120001755 and 20220808165025003)。
文摘Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.
基金The authors gratefully acknowledge National Natural Science Foundation of China[Grant No.51805113 and 51775142]National Key R&D Program of China[2019YFA0705201]+2 种基金China Postdoctoral Science Foundation funded project[Grant No.2020T130143,2018M631923]Fundamental Research Funds for the Central Uni-versities[Grant No.FRFCU5710050920]Heilongjiang Touyan Team[XNAUEA 5640202520]。
文摘Skutterudite(SKD)thermoelectric materials have high conversion efficiency,great mechanical proper-ties,and economical practicability in the medium temperature range(500e550C).They need to bejoined with metal electrodes to form a thermoelectric power generation device during application.However,high contact resistivity,severe element diffusion,and large coefficient of thermal expansionmismatch are main obstacles for their applications.To address these issues,a FeCoNiCrMo high-entropyalloy diffusion barrier layer was designed and prepared using an arc smelting method in this paper.Effectof heating temperatures on the microstructure and properties of the bonded joints were investigated.The maximum shear strength was 21.6 Mpa and the corresponding reaction layer thickness,contactresistivity were 3.77 mm,1.8 mUcm2 respectively at 600C,40 MPa,10 min.Shear strength dropped downto 18.8 MPa and the contact resistivity increased to 4.2 mU cm2 after aging for 640 h.Numerical modelwas established and it predicted that the contact resistivity would keep lower than 6.5 mU cm2(300 h,100 days)and 11 mU cm2(8760 h,1 year)and the reaction layer thickness would not exceed 25 mm(2400 h,100 days)and 45 mm(8760 h,1 year).
