As one of the most important key technologies for future advanced light source based on the energy recovery linac, a photocathode dc electron gun is supported by Institute of High Energy Physics （IHEP） to address th...As one of the most important key technologies for future advanced light source based on the energy recovery linac, a photocathode dc electron gun is supported by Institute of High Energy Physics （IHEP） to address the technical challenges of producing very low ernittance beams at high average current. Construction of the dc gun is completed and a preliminary high voltage conditioning is carried out up to 440 k V. The design, construction and preliminary HV conditioning results for the dc gun are described.展开更多
We investigate the dc Josephson effect in one-dimensional junctions where a ring conductor is sandwiched between two semiconductor nanowires with proximity-induced superconductivity. Peculiar features of the Josephson...We investigate the dc Josephson effect in one-dimensional junctions where a ring conductor is sandwiched between two semiconductor nanowires with proximity-induced superconductivity. Peculiar features of the Josephson effect arise due to the interplay of spin-orbit interaction and external Zeenmn field. By tuning the Zeeman field orientation, the device can vary from 0 to π junction. Afore importantly, nonzero ,losephson current is possible at zero phase difference across the junction. Although this anomalous Josephson current is not relevant to the topological phase transition, its magnitude can be significantly enhanced whe, n the nanowire, s become topological superconductors where Majorana bound states emerge. Distinct modulation patterns are obtained for the semiconductor nanowires in the topologically trivial and non-trivial phases. These results are useful to probe the topological phase transition in semiconductor nanowire junctions via the dc Josephson effect.展开更多
This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18...This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.展开更多
Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and ...Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements＇ chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.展开更多
A self-consistent model was adopted to study the time evolution of low-voltage pulsed DC glow discharge. The distributions of electric field, ion density and electron density in nitrogen were investigated in our simul...A self-consistent model was adopted to study the time evolution of low-voltage pulsed DC glow discharge. The distributions of electric field, ion density and electron density in nitrogen were investigated in our simulation, and the temporal shape of the discharge current was also obtained. Our results show that the dynamic behaviors of the discharge depends strongly on the applied pulse voltage, and the use of higher pulse voltages results in a significantly increase of discharge current and a decrease of discharge delay time. The current-voltage characteristic cMculated by adjusting secondary electron emission coefficient for different applied pulse voltage under the gas pressure of 1 Torr is found in a reasonable agreement with the experimental results.展开更多
Corona discharge suppression for high-voltage direct-current(HVDC)transmission lines at line terminals such as converter stations is a subject that requires attention.In this paper,a method based on a conductor covere...Corona discharge suppression for high-voltage direct-current(HVDC)transmission lines at line terminals such as converter stations is a subject that requires attention.In this paper,a method based on a conductor covered with dielectric film is proposed and implemented through a bench-scale setup.Compared with the bare conductor,the corona discharge suppression effect of the dielectric-film-covered conductor under positive polarity is studied from the composite field strength and ion current density using a line-plate experimental device.The influences of film thickness and film material on the corona discharge suppression effect are investigated.The charge accumulation and dissipation characteristics of different film materials are also studied.The results show that the conductor covered with dielectric film has excellent ability to inhibit corona discharge.The ground-level composite field strength of the conductor covered with dielectric film is lower than its nominal field strength,and its ion current density is at the nA m^(−2) level.The corona threshold voltage can be promoted by increasing the film thickness,but the ability to inhibit corona discharge becomes weak.The larger the surface electric field strength,the more charge accumulated,but the faster the charge dissipation rate.Compared with polyvinyl chloride film,cross-linked polyethylene film has stronger charge accumulation ability and slower charge dissipation rate,which can better restrain the corona discharge of HVDC transmission lines.展开更多
A direct-current air plasma jet operated underwater presents three stable modes including an intermittently-pulsed discharge, a periodically-pulsed discharge and a continuous discharge with increasing the power voltag...A direct-current air plasma jet operated underwater presents three stable modes including an intermittently-pulsed discharge, a periodically-pulsed discharge and a continuous discharge with increasing the power voltage. The three discharge modes have different appearances for the plasma plumes. Moreover, gap voltage-current characteristics indicate that the continuous discharge is in a normal glow regime. Spectral lines from reactive species（OH, N2, N2^＋, Hα,and O） have been revealed in the emission spectrum of the plasma jet operated underwater.Spectral intensities emitted from OH radical and oxygen atom increase with increasing the power voltage or the gas flow rate, indicating that reactive species are abundant. These reactive species cause the degradation of the methylene blue dye in solution. Effects of the experimental parameters such as the power voltage, the gas flow rate and the treatment time are investigated on the degradation efficiency. Results indicate that the degradation efficiency increases with increasing the power voltage, the gas flow rate or the treatment time. Compared with degradation in the intermittently-pulsed mode or the periodically-pulsed one, it is more efficient in the continuous mode, reaching 98% after 21 min treatment.展开更多
目的:研究双侧经颅直流电刺激(dual-hemispheric transcranial direct current stimulation,Dual-tDCS)对慢性期脑卒中患者上肢运动功能的影响,为治疗慢性期脑卒中上肢功能障碍提供基于神经机制的理论依据。方法:选取某院24例慢性期脑...目的:研究双侧经颅直流电刺激(dual-hemispheric transcranial direct current stimulation,Dual-tDCS)对慢性期脑卒中患者上肢运动功能的影响,为治疗慢性期脑卒中上肢功能障碍提供基于神经机制的理论依据。方法:选取某院24例慢性期脑卒中上肢运动功能障碍患者,按照随机数字表法将其分为研究组(n=13)和对照组(n=11)。对照组采用tDCS伪刺激联合常规康复治疗,研究组采用Dual-tDCS联合常规康复治疗。治疗前后,采用Fugl-Meyer运动功能评定量表上肢部分(Fugl-Meyer assessment upper limb scale,FMA-UL)及日常生活活动能力(activities of daily living,ADL)测评量表对患者活动能力进行评估。对比治疗前后初级运动皮层(M1区)与全脑功能连接(functional connectivity,FC)的变化。使用SPSS 24.0统计学软件进行数据分析。结果:治疗后,2组患者的FMA-UL、ADL评分比治疗前均显著提高,且研究组评分明显高于对照组,差异有统计学意义(P<0.05)。M1区与全脑FC分析显示,治疗后对照组健侧M1区到患侧枕中回、健侧舌回、健侧角回FC降低(P<0.01);患侧M1区未见FC变化脑区。治疗后研究组健侧M1区到健侧小脑、健侧小脑蚓部FC降低,到患侧中央前回FC增加(P<0.01);患侧M1区到患侧小脑、患侧颞中回FC增加,到健侧中央前回FC降低(P<0.01)。结论:Dual-tDCS对大脑的神经调控作用可改善慢性期卒中患者运动和非运动相关脑区的FC,可能是慢性期脑卒中上肢运动功能障碍的康复机制。展开更多
电网换相换流器型高压直流输电(line commutated converter-based high voltage direct current,LCC-HVDC)系统若发生后续换相失败,将严重影响交直流混联电网的安全稳定运行。文中首先针对LCC-HVDC系统故障恢复过程中电流偏差控制作用...电网换相换流器型高压直流输电(line commutated converter-based high voltage direct current,LCC-HVDC)系统若发生后续换相失败,将严重影响交直流混联电网的安全稳定运行。文中首先针对LCC-HVDC系统故障恢复过程中电流偏差控制作用阶段易再次发生换相失败的问题,对电流偏差控制参数与换相失败之间的关系进行理论分析,发现此阶段系统若不发生换相失败,逆变侧LCC直流电压和交流换相电压须满足一定的约束关系,且该约束关系受电流偏差控制参数的直接影响。然后,基于理论分析结果,提出一种电流偏差控制参数整定方法,可改善系统故障恢复过程中对直流电压恢复速度和程度的控制要求,使系统更易满足直流电压与交流换相电压稳定运行约束关系,以降低后续换相失败概率。最后,利用PSCAD/EMTDC仿真平台CIGRE标准测试模型验证了理论分析的正确性以及参数整定方法的有效性。展开更多
同步参考坐标系锁相环是高压直流(high voltage direct current,HVDC)同步触发控制系统中广泛应用的一种窄带宽锁相环,在交流系统故障引起相位跳变情况下,其动态响应缓慢。为增大锁相环的带宽,一种滑动平均滤波器(moving average filter...同步参考坐标系锁相环是高压直流(high voltage direct current,HVDC)同步触发控制系统中广泛应用的一种窄带宽锁相环,在交流系统故障引起相位跳变情况下,其动态响应缓慢。为增大锁相环的带宽,一种滑动平均滤波器(moving average filter,MAF)被前置于锁相环路,然而MAF本身存在响应延迟,制约了锁相环的同步速度。为了缓解响应延迟问题,文中提出一种考虑MAF延时和前馈补偿的HVDC快速锁相环。首先,利用MAF线性暂态特征预测相位变化,并分别针对故障接入和切除引起的相位跳变问题提出不同的补偿策略;接着,利用不变性原理对锁相环路进行前馈补偿,在负反馈控制和前馈补偿共同构成的复合校正控制系统的作用下,锁相环能够在较小PI参数下实现快速响应;最后,将所提快速锁相环在CIGRE HVDC标准模型和三峡—上海直流工程模型中进行仿真验证。结果表明,该快速锁相环能够有效缓解滤波器响应延迟的制约,缩短失锁时间,进而提高高压直流逆变侧抵御换相失败的能力。展开更多
基金Supported by the Innovation and Technology Fund of Institute of High Energy Physics
文摘As one of the most important key technologies for future advanced light source based on the energy recovery linac, a photocathode dc electron gun is supported by Institute of High Energy Physics （IHEP） to address the technical challenges of producing very low ernittance beams at high average current. Construction of the dc gun is completed and a preliminary high voltage conditioning is carried out up to 440 k V. The design, construction and preliminary HV conditioning results for the dc gun are described.
基金Supported by the Fundamental Research Funds for the Central Universities under Grant No 15D210901the National Natural Science Foundation of China under Grant Nos 11174049 and 61290301the National University Student Innovation Program under Grant No 14T10902
文摘We investigate the dc Josephson effect in one-dimensional junctions where a ring conductor is sandwiched between two semiconductor nanowires with proximity-induced superconductivity. Peculiar features of the Josephson effect arise due to the interplay of spin-orbit interaction and external Zeenmn field. By tuning the Zeeman field orientation, the device can vary from 0 to π junction. Afore importantly, nonzero ,losephson current is possible at zero phase difference across the junction. Although this anomalous Josephson current is not relevant to the topological phase transition, its magnitude can be significantly enhanced whe, n the nanowire, s become topological superconductors where Majorana bound states emerge. Distinct modulation patterns are obtained for the semiconductor nanowires in the topologically trivial and non-trivial phases. These results are useful to probe the topological phase transition in semiconductor nanowire junctions via the dc Josephson effect.
基金supported by the National Natural Science Foundation of China (Grant No. 60807001)the National Basic Research Program of China (Grant No. 2011CB201605)the Foundation of Henan Educational Committee (Grant No. 2010A140017)
文摘This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.
基金Supported by the RU Top-Down under Grant No 1001/CSS/870019
文摘Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements＇ chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.
基金supported by the Program for Innovative Research Team of High Education in Liaoning province of China (No.2009T055)
文摘A self-consistent model was adopted to study the time evolution of low-voltage pulsed DC glow discharge. The distributions of electric field, ion density and electron density in nitrogen were investigated in our simulation, and the temporal shape of the discharge current was also obtained. Our results show that the dynamic behaviors of the discharge depends strongly on the applied pulse voltage, and the use of higher pulse voltages results in a significantly increase of discharge current and a decrease of discharge delay time. The current-voltage characteristic cMculated by adjusting secondary electron emission coefficient for different applied pulse voltage under the gas pressure of 1 Torr is found in a reasonable agreement with the experimental results.
基金by State Grid Shandong Electric Power Company(52062618001M)。
文摘Corona discharge suppression for high-voltage direct-current(HVDC)transmission lines at line terminals such as converter stations is a subject that requires attention.In this paper,a method based on a conductor covered with dielectric film is proposed and implemented through a bench-scale setup.Compared with the bare conductor,the corona discharge suppression effect of the dielectric-film-covered conductor under positive polarity is studied from the composite field strength and ion current density using a line-plate experimental device.The influences of film thickness and film material on the corona discharge suppression effect are investigated.The charge accumulation and dissipation characteristics of different film materials are also studied.The results show that the conductor covered with dielectric film has excellent ability to inhibit corona discharge.The ground-level composite field strength of the conductor covered with dielectric film is lower than its nominal field strength,and its ion current density is at the nA m^(−2) level.The corona threshold voltage can be promoted by increasing the film thickness,but the ability to inhibit corona discharge becomes weak.The larger the surface electric field strength,the more charge accumulated,but the faster the charge dissipation rate.Compared with polyvinyl chloride film,cross-linked polyethylene film has stronger charge accumulation ability and slower charge dissipation rate,which can better restrain the corona discharge of HVDC transmission lines.
基金sponsored by National Natural Science Foundation of China under Grant Nos.11575050 and 10805013One Hundred Talent Project of Hebei Province under GrantNo.SLRC2017021+3 种基金the Midwest Universities Comprehensive Strength Promotion Projectthe Natural Science Foundation of Hebei province,China,under Grant Nos.A2015201092,A2016201042 and A2015201199the Research Foundation of Education Bureau of Hebei province,China,under Grant No.LJRC011the 333 Talents Project of Hebei province,China,under Grant No.A2016005005
文摘A direct-current air plasma jet operated underwater presents three stable modes including an intermittently-pulsed discharge, a periodically-pulsed discharge and a continuous discharge with increasing the power voltage. The three discharge modes have different appearances for the plasma plumes. Moreover, gap voltage-current characteristics indicate that the continuous discharge is in a normal glow regime. Spectral lines from reactive species（OH, N2, N2^＋, Hα,and O） have been revealed in the emission spectrum of the plasma jet operated underwater.Spectral intensities emitted from OH radical and oxygen atom increase with increasing the power voltage or the gas flow rate, indicating that reactive species are abundant. These reactive species cause the degradation of the methylene blue dye in solution. Effects of the experimental parameters such as the power voltage, the gas flow rate and the treatment time are investigated on the degradation efficiency. Results indicate that the degradation efficiency increases with increasing the power voltage, the gas flow rate or the treatment time. Compared with degradation in the intermittently-pulsed mode or the periodically-pulsed one, it is more efficient in the continuous mode, reaching 98% after 21 min treatment.
文摘目的:研究双侧经颅直流电刺激(dual-hemispheric transcranial direct current stimulation,Dual-tDCS)对慢性期脑卒中患者上肢运动功能的影响,为治疗慢性期脑卒中上肢功能障碍提供基于神经机制的理论依据。方法:选取某院24例慢性期脑卒中上肢运动功能障碍患者,按照随机数字表法将其分为研究组(n=13)和对照组(n=11)。对照组采用tDCS伪刺激联合常规康复治疗,研究组采用Dual-tDCS联合常规康复治疗。治疗前后,采用Fugl-Meyer运动功能评定量表上肢部分(Fugl-Meyer assessment upper limb scale,FMA-UL)及日常生活活动能力(activities of daily living,ADL)测评量表对患者活动能力进行评估。对比治疗前后初级运动皮层(M1区)与全脑功能连接(functional connectivity,FC)的变化。使用SPSS 24.0统计学软件进行数据分析。结果:治疗后,2组患者的FMA-UL、ADL评分比治疗前均显著提高,且研究组评分明显高于对照组,差异有统计学意义(P<0.05)。M1区与全脑FC分析显示,治疗后对照组健侧M1区到患侧枕中回、健侧舌回、健侧角回FC降低(P<0.01);患侧M1区未见FC变化脑区。治疗后研究组健侧M1区到健侧小脑、健侧小脑蚓部FC降低,到患侧中央前回FC增加(P<0.01);患侧M1区到患侧小脑、患侧颞中回FC增加,到健侧中央前回FC降低(P<0.01)。结论:Dual-tDCS对大脑的神经调控作用可改善慢性期卒中患者运动和非运动相关脑区的FC,可能是慢性期脑卒中上肢运动功能障碍的康复机制。
文摘电网换相换流器型高压直流输电(line commutated converter-based high voltage direct current,LCC-HVDC)系统若发生后续换相失败,将严重影响交直流混联电网的安全稳定运行。文中首先针对LCC-HVDC系统故障恢复过程中电流偏差控制作用阶段易再次发生换相失败的问题,对电流偏差控制参数与换相失败之间的关系进行理论分析,发现此阶段系统若不发生换相失败,逆变侧LCC直流电压和交流换相电压须满足一定的约束关系,且该约束关系受电流偏差控制参数的直接影响。然后,基于理论分析结果,提出一种电流偏差控制参数整定方法,可改善系统故障恢复过程中对直流电压恢复速度和程度的控制要求,使系统更易满足直流电压与交流换相电压稳定运行约束关系,以降低后续换相失败概率。最后,利用PSCAD/EMTDC仿真平台CIGRE标准测试模型验证了理论分析的正确性以及参数整定方法的有效性。
文摘同步参考坐标系锁相环是高压直流(high voltage direct current,HVDC)同步触发控制系统中广泛应用的一种窄带宽锁相环,在交流系统故障引起相位跳变情况下,其动态响应缓慢。为增大锁相环的带宽,一种滑动平均滤波器(moving average filter,MAF)被前置于锁相环路,然而MAF本身存在响应延迟,制约了锁相环的同步速度。为了缓解响应延迟问题,文中提出一种考虑MAF延时和前馈补偿的HVDC快速锁相环。首先,利用MAF线性暂态特征预测相位变化,并分别针对故障接入和切除引起的相位跳变问题提出不同的补偿策略;接着,利用不变性原理对锁相环路进行前馈补偿,在负反馈控制和前馈补偿共同构成的复合校正控制系统的作用下,锁相环能够在较小PI参数下实现快速响应;最后,将所提快速锁相环在CIGRE HVDC标准模型和三峡—上海直流工程模型中进行仿真验证。结果表明,该快速锁相环能够有效缓解滤波器响应延迟的制约,缩短失锁时间,进而提高高压直流逆变侧抵御换相失败的能力。
