Hydrogenic donor impurity states and intersubband optical absorption spectra of monolayer transition metal dichalcogenides in dielectric environments

The hydrogenic donor impurity states and intersubband optical absorption spectra in monolayer transition metal dichalcogenides(ML TMDs) under dielectric environments are theoretically investigated based on a two-dimensional(2D)nonorthogonal associated Laguerre basis set. The 2D quantum confinement effect together with the strongly reduced dielectric screening results in the strong attractive Coulomb potential between electron and donor ion, with exceptionally large impurity binding energy and huge intersubband oscillator strength. These lead to the strong interaction of the electron with light in a 2D regime. The intersubband optical absorption spectra exhibit strong absorption lines of the non-hydrogenic Rydberg series in the mid-infrared range of light. The strength of the Coulomb potential can be controlled by changing the dielectric environment. The electron affinity difference leads to charge transfer between ML TMD and the dielectric environment, generating the polarization-electric field in ML TMD accompanied by weakening the Coulomb interaction strength. The larger the dielectric constant of the dielectric environment, the more the charge transfer is, accompanied by the larger polarization-electric field and the stronger dielectric screening. The dielectric environment is shown to provide an efficient tool to tune the wavelength and output of the mid-infrared intersubband devices based on ML TMDs.

Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells

The shallow hydrogenic donor impurity states in square, V-shaped, and parabolic quantum wells are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The first four impurity energy levels and binding energy of the ground state are more easily calculated than with the variation method. The calculation results indicate that impurity energy levels decrease with the increase of the well width and decrease quickly when the well width is small. The binding energy of the ground state increases until it reaches a maximum value, and then decreases as the well width increases. The results are meaningful and can be widely applied in the design of various optoelectronie devices.

Electron energy states in a two-dimensional GaAs quantum ring with hydrogenic donor impurity in the presence of magnetic field

Using the finite element method, we investigate the lowest and first few excited state energies in a two- dimensional GaAs quantum ring （QR） with a hydrogenic donor impurity and effective mass approximation under a uniform magnetic field perpendicular to the ring plane. We study in detail the dependence of the energy spectrum with different angular momentum on the inner radius, the outer radius and width of the QR, the magnetic field and impurity position. The results reveal that the electron energies increase with the inner radius while decrease with the outer radius and width of the QR; for a fixed ring, the magnetic field induces the increase of the electron energies. Moreover, the existence of impurity reduces energy levels, and the energy levels depend highly on the impurity position, which decreases as the impurity is far away from the center of the QR. Also, the dependence of the angular momentum on the energy spectrum is analyzed in detail.

Donor-bound electron states in a two-dimensional quantum ring under uniform magnetic field

The electron states in a two-dimensional GaAs/AlGaAs quantum ring are theoretically studied in effective mass approximation. On-centre donor impurity and uniform magnetic field perpendicular to the ring plane are taken into account. The energy spectrum with different angular momentum changes dramatically with the geometry of the ring. The donor impurity reduces the energies with an almost fixed value; however, the magnetic field alters energies in a more complex way. For example, energy levels under magnetic field will cross each other when increasing the inner radius and outer radius of the ring, leading to the fact that the arrangement of energy levels is distinct in certain geometry of the ring. Moreover, energy levels with negative angular momentum exhibit the non-monotonous dependence on the increasing magnetic field.

Polaron Energy and Effective Mass in Parabolic Quantum Wells

The energy and effective mass of a polaron in a parabolic quantum well are studied theoretically by using LLP-like transformations and a variational approach. Numerical results are presented for the polaron energy and effective mass in the GaAs/Al0.3Ga0.7As parabolic quantum well. The results show that the energy and the effective mass of the polaron both have their maxima in the finite parabolic quantum well but decrease monotonously in the infinite parabolic quantum well with the increasing well width. It is verified that the bulk longitudinal optical phonon mode approximation is an adequate formulation for the electron-phonon coupling in parabolic quantum well structures.

Effect of Hydrostatic Pressure on Interband Transitions in Coupled Quantum Wires

We calculate the exciton binding energy and interband optical absorption in a rectangular coupled quantum wire under the hydrostatic pressure in the effective-mass approximation, using the variational approach. It is found that the interband optical absorption strongly depend on the hydrostatic pressure and the coupling parameter, and that the magnitude of the absorption coefficient for the HH1-E1 transition in the coupled quantum wire is larger than that of the single quantum wire.

MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

Low-frequency and high-frequency Capacitance-Voltage （C-V） curves of Metal-Oxide- Semiconductor Capacitors （MOSC）, including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from 〉 0.01Cox to 〉 10Cox. Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, NDD, the ground state electron trapping energy level depth measured from the conduction band edge, Ec - ED, the degeneracy of the trapped electron at the ground state, gD, the device temperature, T, and the gate oxide thickness, xox.