Hybrid Laser Technology for Creation of Doped Biomedical Layers

Hybrid laser technologies for deposition of thin films and basic schemes of combination of pulsed laser deposition (PLD) with magnetron sputtering and RF discharges or two lasers or three laser deposition systems are presented. Experiences with deposition of chromium doped diamond-like carbon (DLC) films for coating of prostheses are described. Layers of different chromium concentrations were prepared using hybrid systems (PLD + magnetron sputtering or by double PLD). Results of physical and mechanical characterization of film properties and biomedical tests of trivalent and toxic hexavalent chromium are given. Experiences with double laser deposition of DLC layers doped with silver are also mentioned.

Improvement of Performance of Organic Light-Emitting Diodes with Both a MoO3 Hole Injection Layer and a MoO3 Doped Hole Transport Layer

We improve the performance of organic light-emitting diodes （OLEDs） with both a MoO3 hole injection layer （HIL） and a MoO3 doped hole transport layer （HTL）, and present a systematical and comparative investigation on these devices. Compared with OLEDs with only MoO3 HIL or MoO3 doped HTL, OLEDs with both MoO3 HIL and MoO3 doped HTL show superior performance in driving voltage, power efficiency, and stability. Based on the typical NPB/Alq3 heterojunction structure, OLEDs with both MoO3 HIL and MoO3 doped HTL show a driving voltage of 5.4 V and a power efficiency of 1.41 lm/W for 1000 cd/m2, and a lifetime of around 0. 88 h with an initial luminance of 5268 cd/m2 under a constant current of 190 mA/cm2 operation in air without encapsulation. While OLEDs with only MoO3 HIL or MoO3 doped HTL show higher driving voltages of 6.4 V or 5.8 V and lower power efficiencies of 1.201m/W or 1.341m/W for 1000cd/m2, and a shorter lifetime of 0.33 or 0.60h with an initial luminance of around 5122 or 5300cd/m2 under a constant current of 200 or 216mA/cm2 operation. Our results demonstrate clearly that using both MoO3 HIL and MoO3 doped HTL is a simple and effective approach to simultaneoasly improve both the hole injection and transport efficiency, resulting from the lowered energy barrier at the anode interface and the increased hole carrier density in MoO3 doped HTL.

FORMATION AND PROPERTIES 0F POROUS SILICON LAYER ON HEAVILY DOPED n-Si

The anodic voltammetric curves of heavily doped n-Si in HF solution, on which three different regions have emerged, and were plotted, A porous silicon layer with fine morphology was formed in linear region.

Improved dual-channel 4H-SiC MESFETs with high doped n-type surface layers and step-gate structure

An improved dual-channel 4H-SiC MESFET with high doped n-type surface layer and step-gate structure is proposed, and the static and dynamic electrical performances are analyzed.A high doped n-type surface layer is applied to obtain a low source parasitic series resistance, while the step-gate structure is utilized to reduce the gate capacitance by the elimination of the depletion layer extension near the gate edge, thereby improving the RF characteristics and still maintaining a high breakdown voltage and a large drain current in comparison with the published SiC MESFETs with a dual-channel layer.Detailed numerical simulations demonstrate that the gate-to-drain capacitance, the gate-to-source capacitance, and the source parasitic series resistance of the proposed structure are about 4%, 7%, and 18% smaller than those of the dual-channel structure, which is responsible for 1.4 and 6 GHz improvements in the cut-off frequency and the maximum oscillation frequency.

Effect of Crystallinity of Fullerene Derivatives on Doping Density in the Organic Bulk Heterojunction Layer in Polymer Solar Cells

Polymer solar cells （PSCs） based on poly（3-hexylthiophene） （P3HT） and [6,6]-phenyl-C61-butyric acid methyl ester （PCBM） are fabricated by using 1,8-diiodooctane （DIO） as a solvent additive to control the doping density of the PSCs. It is shown that the processing of DIO does not change the doping density of the P3HT phase, while it causes a dramatic reduction of the doping density of the PCBM phase, which decreases the doping density of the whole blend layer from 3.7 × 10^16 cm-3 to 1.2 ×10^16 cm-3. The reduction of the doping density in the PCBM phase originates from the increasing crystallinity of PCBM with DIO addition, and it leads to a decreasing doping density in the blend film and improves the short circuit current of the PSCs.

Alloying cobalt with ruthenium in nitrogen doped graphene layers for developing highly active hydrogen evolution electrocatalysts in alkaline media

Subject Code:B01With the support by the National Natural Science Foundation of China,a creative study by the research group led by Prof.Chen Qianwang(陈乾旺)from the University of Science and Technology of China and High Magnetic Field Laboratory,Hefei Institutes of Physical Science,Chinese Academy of

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

The addition of a buffer layer can improve the device＇s secondary breakdown voltage, thus, improving the single event burnout （SEB） threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an op- timized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer ~ayer. So the linear buffer layer is more advantageous to improving the device＇s SEB performance.