A deep trench super-junction LDMOS with double charge compensation layer(DC DT SJ LDMOS)is proposed in this paper.Due to the capacitance effect of the deep trench which is known as silicon-insulator-silicon(SIS)capaci...A deep trench super-junction LDMOS with double charge compensation layer(DC DT SJ LDMOS)is proposed in this paper.Due to the capacitance effect of the deep trench which is known as silicon-insulator-silicon(SIS)capacitance,the charge balance in the super-junction region of the conventional deep trench SJ LDMOS(Con.DT SJ LDMOS)device will be broken,resulting in breakdown voltage(BV)of the device drops.DC DT SJ LDMOS solves the SIS capacitance effect by adding a vertical variable doped charge compensation layer and a triangular charge compensation layer inside the Con.DT SJ LDMOS device.Therefore,the drift region reaches an ideal charge balance state again.The electric field is optimized by double charge compensation and gate field plate so that the breakdown voltage of the proposed device is improved sharply,meanwhile the enlarged on-current region reduces its specific on-resistance.The simulation results show that compared with the Con.DT SJ LD-MOS,the BV of the DC DT SJ LDMOS has been increased from 549.5 to 705.5 V,and the R_(on,sp) decreased to 23.7 mΩ·cm^(2).展开更多
This work focuses on the ground-state phase diagram,the compensation temperatures and the critical behaviors of a ferrimagnetic graphene-like trilayer induced by crystal fields and exchange couplings.The simulation re...This work focuses on the ground-state phase diagram,the compensation temperatures and the critical behaviors of a ferrimagnetic graphene-like trilayer induced by crystal fields and exchange couplings.The simulation results show that a negative decrease in crystal field or an increase in exchange coupling can increase the critical temperature.More importantly,an M curve with double compensation temperatures can be observed,which is not predicted by the Neel theory.This remarkable compensation phenomenon has potential application value in the field of magnetic recording.展开更多
文摘A deep trench super-junction LDMOS with double charge compensation layer(DC DT SJ LDMOS)is proposed in this paper.Due to the capacitance effect of the deep trench which is known as silicon-insulator-silicon(SIS)capacitance,the charge balance in the super-junction region of the conventional deep trench SJ LDMOS(Con.DT SJ LDMOS)device will be broken,resulting in breakdown voltage(BV)of the device drops.DC DT SJ LDMOS solves the SIS capacitance effect by adding a vertical variable doped charge compensation layer and a triangular charge compensation layer inside the Con.DT SJ LDMOS device.Therefore,the drift region reaches an ideal charge balance state again.The electric field is optimized by double charge compensation and gate field plate so that the breakdown voltage of the proposed device is improved sharply,meanwhile the enlarged on-current region reduces its specific on-resistance.The simulation results show that compared with the Con.DT SJ LD-MOS,the BV of the DC DT SJ LDMOS has been increased from 549.5 to 705.5 V,and the R_(on,sp) decreased to 23.7 mΩ·cm^(2).
基金funded by National Natural Science Foundation of China (grant no. U22A20215)the Natural Science Foundation of Liaoning Province (grant no. 2023MS-218)
文摘This work focuses on the ground-state phase diagram,the compensation temperatures and the critical behaviors of a ferrimagnetic graphene-like trilayer induced by crystal fields and exchange couplings.The simulation results show that a negative decrease in crystal field or an increase in exchange coupling can increase the critical temperature.More importantly,an M curve with double compensation temperatures can be observed,which is not predicted by the Neel theory.This remarkable compensation phenomenon has potential application value in the field of magnetic recording.
