Injection modulation of p^+-n emitter junction in 4H-SiC light triggered thyristor by double-deck thin n-base

To overcome hole-injection limitation of p^＋-n emitter junction in 4H-SiC light triggered thyristor, a novel high- voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two- dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole- injection of p^＋-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n- base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm^2 ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.

High efficiency spreading spectrum modulation using double orthogonal complex sequences

This paper presents a novel scheme of high efficiency spreading spectrum modulation using double orthogonal complex sequences （DoCS）. In this scheme, input data bit-stream is split into many groups with length M. Each group is then mapped into a word of width M and then utihzed to select one sequence from 2u-2 DoCS sequences each with length L. After that, the selected sequence is modulated on carrier in quadrature phase shift keying （QPSK） mode. In addition, a new method named forward phase correction （FPC） is put forward for carrier recovery. Theoretical analysis and bit-error-ratio（BER） experiment results indicate that the proposed scheme has better performance than the conventional direct sequence spread spectrum（DSSS） scheme both in bandwidth efficiency and processing gain of the receiver.

Comparison of performance between bipolar and unipolar double-frequency sinusoidal pulse width modulation in a digitally controlled H-bridge inverter system

By deriving the discrete-time models of a digitally controlled H-bridge inverter system modulated by bipolar sinu- soidal pulse width modulation （BSPWM） and unipolar double-frequency sinusoidal pulse width modulation （UDFSPWM） respectively, the performances of the two modulation strategies are analyzed in detail. The circuit parameters, used in this paper, are fixed. When the systems, modulated by BSPWM and UDFSPWM, have the same switching frequency, the stabil- ity boundaries of the two systems are the same. However, when the equivalent switching frequencies of the two systems are the same, the BSPWM modulated system is more stable than the UDFSPWM modulated system. In addition, a convenient method of establishing the discrete-time model of piecewise smooth system is presented. Finally, the analytical results are confirmed by circuit simulations and experimental measurements.

Treatable focal region modulated by double excitation signal superimposition to realize platform temperature distribution during transcranial brain tumor therapy with high-intensity focused ultrasound

Recently, the phase compensation technique has allowed the ultrasound to propagate through the skull and focus into the brain. However, the temperature evolution during treatment is hard to control to achieve effective treatment and avoid over-high temperature. Proposed in this paper is a method to modulate the temperature distribution in the focal region. It superimposes two signals which focus on two preset different targets with a certain distance. Then the temperature distribution is modulated by changing triggering time delay and amplitudes of the two signals. The simulation model is established based on an 82-element transducer and computed tomography （CT） data of a volunteer＇s head. A finite- difference time-domain （FDTD） method is used to calculate the temperature distributions. The results show that when the distances between the two targets respectively are 7.5-12.5 mm on the acoustic axis and 2.0-3.0 mm in the direction perpendicular to the acoustic axis, a focal region with a uniform temperature distribution （64-65 ℃） can be created. Moreover, the volume of the focal region formed by one irradiation can be adjusted （26.8-266.7 mm3） along with the uniform temperature distribution. This method may ensure the safety and efficacy of HIFU brain tumor therapy.

MODULES OVER DOUBLE CROSSPRODUCTS OF SKEW-HOPF PAIRS

The purpose is to study modules of double crossproducts D (X, A) of Skew-Hopf pairs ( X, A). A sufficient and necessary condition for M to be D ( X, A)-mod is shown. Relations between D ( X, A)-mod and quantam Yang-Baxter A-mod or X-mod are revealed.

Compressive Sensing Approach in Multicarrier Sparsely Indexing Modulation Systems

recently the indexed modulation(IM) technique in conjunction with the multi-carrier modulation gains an increasing attention. It conveys additional information on the subcarrier indices by activating specific subcarriers in the frequency domain besides the conventional amplitude-phase modulation of the activated subcarriers. Orthogonal frequency division multiplexing(OFDM) with IM(OFDM-IM) is deeply compared with the classical OFDM. It leads to an attractive trade-off between the spectral efficiency(SE) and the energy efficiency(EE). In this paper, the concept of the combinatorial modulation is introduced from a new point of view. The sparsity mapping is suggested intentionally to enable the compressive sensing(CS) concept in the data recovery process to provide further performance and EE enhancement without SE loss. Generating artificial data sparsity in the frequency domain along with naturally embedded channel sparsity in the time domain allows joint data recovery and channel estimation in a double sparsity framework. Based on simulation results, the performance of the proposed approach agrees with the predicted CS superiority even under low signal-to-noise ratio without channel coding. Moreover, the proposed sparsely indexed modulation system outperforms the conventional OFDM system and the OFDM-IM system in terms of error performance, peak-to-average power ratio(PAPR) and energy efficiency under the same spectral efficiency.

Heavy DC sensing theory and double magnetic detector

On line measurement of heavy dc current has been studied for many years, and devices based on magnetic modulator, magnetic amplifier, optic fiber have been developed, but harsh environments made all of them are insufficient for on line measurement. A new sensing theory using magnetic modulator and magnetic amplifier is discussed. The open loop characteristic of the double detector has only one operating point corresponding to zero ampere turns. The double detector comparator possesses not only high precision, low drift, high linearity and good antimagnetic property from magnetic modulator comparators, but also the perfect stability and reliability from magnetic amplifiers. A double dc comparator with a ratio of 5 000A/1A has been constructed for testing and performance evaluation. The performance and test results show: The error of the double detector dc comparator measured with stable dc currents between 10% and 100% rated current is less than 5×10 -5 . The double detector dc comparator has successfully achieved rapid and accurate dc step response at 10 000A which is twice over the rated current, which shows the fire new detector has perfect stability and reliability.

二面体群群代数的Drinfeld double表示

研究2n阶二面体群群代数的Drinfeld double D(Dn)的不可约表示,其中基础域k为特征不整除2n的代数闭域,给出了二面体群群代数上Yetter-Drinfeld单模的结构和同构分类.

Controllable double electromagnetically induced transparency in a closed four-level-loop cavity-atom system

We present a theoretical study of an optical cavity coupled with single four-level atoms in closed loop formed via applied control lasers. The transmitted probe field from the cavity is analyzed. We show that the electromagnetically induced transparency（EIT） in the cavity and the normal mode splitting will be very different with changing the closed interaction phase and the intensity of the free-space control laser. This coupled cavity-atom system presents a variational double-EIT that comes from modulating the splitting of the dark state, which means that we could realize the gradual transfer between one EIT peak and two EIT peaks by adjusting the applied control lasers, and the normal mode splitting sidebands will shift slightly by changing the free-space control laser. This means that we could control the output cavity probe field more freely and it is easer to realize optical switch controlled by more parameters. We also depict the angular dispersion of the intracavity probe field in different free-space control laser. The large phase shift（-π → π） of the reflected intracavity probe field will be very useful for optical temporal differentiation and quantum phase gate.

High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.

Improved Ladder Wave Modulation of Circulating Current Suppressing Control Strategy of MMC

This paper partitions the arm current of MMC into uncontrollable current and controllable current. The former is determined by the load that can’t be controlled by taking any control strategy. The later caused by the unbalanced total inserted voltage of three arms can be controlled by some improved algorithms. The conclusion based on the researching the essence of circulating current is reached that change the number of the inserted sub-modules in each phase can suppress the circulating current. Combined with the improved ladder wave modulation, a novel circulating current suppression strategy particularly for the inverter station is developed. The improved strategy can adapt to load changes and reduce the circulating current and output voltage THD of MMC ac terminals greatly without increasing any peripheral circuits. Finally, the simulation model of 100 submodules in each phase is constructed in MATLAB and the simulation results verify the correctness and effectiveness of the modified control algorithm.

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage （BV）. The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.

一类三电平伪图腾柱无桥PFC变换器

针对传统二极管钳位型三电平整流器在单相电源前级功率校正(power factor correction,PFC)电路应用场景下全控开关器件数量多的问题,该文基于3种传统无桥PFC电路进行三电平电路拓扑设计,提出一类三电平伪图腾柱PFC电路(single-phase three-level pseudo totem-pole PFC circuit,STPT-PFC),该类三电平PFC具有双电感支路桥臂,两者相互配合工作为输入电流提供路径,在正负半周两电感支路桥臂工作于不同模态可有效降低分别流过两电感的电流;基于该类PFC的一个代表性电路,从工作电流路径过程、关键波形和调制脉冲分配等方面对其进行工作原理分析,并对其它电路进行电路特性总结,推导桥臂对地电压电平特性与开关脉冲分配的数学关系式。另外,该类STPT-PFC共有5种结构,结合该类STPT-PFC结构特点,提出统一区间判断条件的双层载波调制技术,该类STPT-PFC具有相同开关器件不同拓扑结构可采用同一调制方案的特点,便于该类调制技术移植。最后,基于STPT-PFC-I电路设计1台额定功率1 kW、直流输出电压400 V的实验样机,从稳态及动态两方面进行实验分析,实验结果验证所提出一类三电平伪图腾柱PFC电路的可行性和三电平统一双层调制方法的有效性。

基于双模式变频移相调制的单级式双有源桥型DC-AC变换器

针对单级式双有源桥(DAB)型DC-AC变换器关断电流较大和软开关范围有限的问题,该文提出一种双模式变频移相调制策略。首先,对DAB变换器的单移相(SPS)调制和扩展移相(EPS)调制进行时域分析,得到其功率传输特性;然后,分析变换器的关断电流与软开关条件,得到移相比和开关频率约束方程;在此基础上,分析双模式间的移相比边界条件,提出变换器运行模式的切换机制,从而在实现变换器单级功率变换的同时,保证全范围软开关并降低低压侧的关断电流;最后,通过仿真和实验验证了所提调制策略的有效性与可行性。

基于磁场补偿的定子永磁型磁场调制电机转矩性能提升研究

在定子永磁型磁场调制(stator-permanent-magnet field modulated,S-FMPM)电机的设计基础上,引入磁场补偿设计,以期改善磁场调制效应,为实现电机转矩性能提升提供可能。基于气隙磁场调制理论,建立S-FMPM电机的调制函数,并展现磁场调制过程,确定主要气隙谐波参与电机转矩性能研究。研究过程中,采用转子分区设计形成双气隙电机,使气隙磁场获得一定的补偿效果。接着,探讨双气隙电机的磁势分配规律,并基于此验证磁势利用效果的改善和电机转矩性能的提升;进一步,为改善该电机的磁场补偿效果,定义了体现磁势利用效果的谐波因子和反映转矩补偿效果的转矩补偿因子,分别作为优化目标,并引入分层优化策略对电机进行优化。最后,为了验证电机设计和优化分析的有效性,对电机电磁性能进行评估与分析,制造样机并进行实验,验证电机及其优化设计的合理性和有效性。

基于全光混沌注入双环电光相位反馈环的混沌保密通信系统研究

针对现有混沌保密光通信系统时延特征隐藏所需反馈增益系数较大这一问题,设计了一种基于全光混沌注入双环电光相位反馈环的混沌保密通信系统。首先,由全光反馈产生光混沌并将其耦合至2个电光相位混沌反馈环中。然后,通过相位调制的方式实现信息与混沌载波的非线性耦合并参与混沌载波的生成。最后,在检测端通过光混沌同步实现信号的解密。借助MATLAB软件仿真分析了系统中混沌信号的复杂度、时延特征隐藏、同步性、鲁棒性和通信性能。仿真结果表明,所设计的混沌保密通信系统在较小的反馈系数时具有较高的复杂度且时延特征得到较好的隐藏。

基于部分能量耦合线圈的无线能量与信号同步传输方法研究

针对无线电能传输系统中能量发送端与接收端进行全双工通信的需求,提出一种基于部分能量耦合线圈的无线能量与信号同步传输方法。利用能量耦合线圈的内侧和外侧部分线圈分别作为信号正反向传输耦合机构,并在信号接收回路中采用LC并联支路抑制同侧信号载波的串扰。通过构建系统模型,分析能量传输与信号传输的增益以及系统传输干扰,得到系统参数对传输特性影响规律。为提高信号传输增益以及减小信号正反向传输之间的串扰,优化了耦合机构线圈布置方案。最后,搭建了传输功率为20 W的无线能量与信号全双工同步传输平台,实验结果表明,在电能传输不受影响的同时,实现了正向传输速率200 kbps、反向传输速率400 kbps的信号全双工同步传输,验证了所提方法的可靠性和有效性。

基于平稳交错正交调制辅助的抗衰落低分辨毫米波定时恢复算法

信号衰落严重时,现有的低分辨毫米波定时恢复算法估计精度不足。针对上述问题,文中提出一种基于平稳交错正交调制辅助的抗衰落低分辨毫米波定时恢复算法。该算法设计了独特的二次重采样数据平稳器以及交错正交调制辅助的抗衰落估计器。二次重采样数据平稳器模块对信号二次重采样,实现对数据的非有理过采样。通过非有理过采样,该模块获得了具有均匀采样抖动的平稳基带信号。交错正交调制辅助的抗衰落估计器推导了平稳低位宽量化信号的定时误差估计公式,通过对平稳的基带信号低通滤波与延迟相关,最终导出定时误差估计值。仿真结果表明,所提算法的均方误差性能优于现有的其他算法,具有较高的定时恢复精度。

一种采用柔性缓冲垫块的双面散热SiC MOSFET双向开关模块研究

随着功率模块朝着高温、高功率、高密度方向发展,这对模块的封装结构提出了新的要求。较传统的引线键合结构,双面散热结构由于具有高散热能力和低寄生电感等特点受到广泛关注。但是双面散热结构材料间热膨胀系数的差异使之承受较大的热-机械应力,降低了功率模块的可靠性。因此,为设计具有低热-机械应力双面散热双向开关,本研究首先使用仿真分析了芯片布局对模块散热性能以及寄生电感的影响,在此基础上提出了一种具有低杨氏模量的柔性缓冲垫块,综合仿真及试验初步证明其降低热-机械应力、提高模块可靠性的可行性。

双面散热SiC功率模块温度均匀性和开关特性评估

碳化硅MOSFET因其材料特性被广泛应用于新能源汽车的高压、高频和高功率密度场合。在考虑双面水冷散热过程,往往忽略芯片布局间距对于散热以及芯片温度均匀性的影响,未考虑芯片温度均匀性对于多芯片并联电流均匀性的影响。针对上述问题,设计一种双面水冷的封装结构,分析不同芯片布局间距对芯片温度均匀性的影响,分析不同结温及不同芯片布局对寄生参数及开关特性的影响,并针对不同芯片布局间距和不同液冷工况,采用大量仿真及响应面对比分析,验证了所提方法的有效性,为SiC功率模块封装对芯片温度均匀性及开关特性的影响提供技术方法指导和定量分析。