Impact of oxygen incorporation on interface optimization and defect suppression for efficiency enhancement in Cu_(2)ZnSn(S,Se)_(4)solar cells

Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from severe carrier recombination,limiting the photovoltaic performance.Unfavorable energy band alignment at the p-n junction and defective front interface are two main causes.Herein,oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the defects.With optimized oxygen incorporation conditions,the carrier separation and collection behavior at the front interface of the device is improved.In particular,it is found that oxygen incorporated absorber exhibits increased band bending,larger depletion region width,and suppressed absorber defects.These indicate the dynamic factors for carrier separation become stronger.Meanwhile,the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier transport.As a consequence,the champion efficiency of CZTSSe solar cells has been improved from 9.74%to 12.04%with significantly improved open-circuit voltage after optimized air-annealing condition.This work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.

Efficient and Stable Inverted Perovskite Solar Modules Enabled by Solid-Liquid Two-Step Film Formation

A considerable efficiency gap exists between large-area perovskite solar modules and small-area perovskite solar cells.The control of forming uniform and large-area film and perovskite crystallization is still the main obstacle restricting the efficiency of PSMs.In this work,we adopted a solid-liquid two-step film formation technique,which involved the evaporation of a lead iodide film and blade coating of an organic ammonium halide solution to prepare perovskite films.This method possesses the advantages of integrating vapor deposition and solution methods,which could apply to substrates with different roughness and avoid using toxic solvents to achieve a more uniform,large-area perovskite film.Furthermore,modification of the NiO_(x)/perovskite buried interface and introduction of Urea additives were utilized to reduce interface recombination and regulate perovskite crystallization.As a result,a large-area perovskite film possessing larger grains,fewer pinholes,and reduced defects could be achieved.The inverted PSM with an active area of 61.56 cm^(2)(10×10 cm^(2)substrate)achieved a champion power conversion efficiency of 20.56%and significantly improved stability.This method suggests an innovative approach to resolving the uniformity issue associated with large-area film fabrication.

Hardness Measurement and Evaluation of Double-layer Films on Material Surface

A method for hardness measurement and evaluation of double-layer thin films on the material surface is proposed. Firstly, it is studied how to obtain the force-indentation response with the finite element method when the indentation is less than 100 nanometers, in which current nanoindentation experiments have no reliable accuracy. The whole hardness-displacement curve and fitted equation are obtained. At last, a formula to predict the hardness of the thin film on the material surface is derived and favorably compared with experiments.

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO：In thin film with low resistivity （2.58 × 10^-3 Ω. cm） and good surface morphology. It is found that the surface morphology of the double-layer ZnO：In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO：In thin film. Both total and direct transmittances of the double-layer ZnO：In film are above 80% in the visible light region. Single junction a-Si：H solar cell based on the double-layer ZnO：In as front electrode is also investigated.

Thickness Impacts of Vacancy Defects in Epitaxial La0.7Sr0.3MnO3 Thin Films Using Slow Positron Beam

Thickness effects of thin La0.7Sr0.3MnO3 （LSMO） films on （LaAlOa）0.3（Sr2AlTaO6）0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function of thickness and differnt annealing conditions. Results reveal there could be more than one mechanism to induce vacancy-like defects. It was found that strain-induced defects mainly influence the S value of the in situ oxygenambience annealing LSMO thin films and the strain could vanish still faster along with the increase of thickness, and the oxygen-deficient induced defects mainly affect the S value of post-annealing LSMO films.

Bauschinger and size effects in thin-film plasticity due to defect-energy of geometrical necessary dislocations

The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations （GNDs） are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations （or pile-ups） moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.

Influences of vacancy defects on thermal conductivities of Ge thin films

The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics （MD） simula- tions and theoretical analysis based on the Boltzmann equation. Both the MD and theoretical results show that the lattice thermal conductivity dramatically decreases with the increasing of vacancy concentration at 400 and 500 K. In addition, the dependence of vacancy concentration on the thermal conductivity of Ge thin films becomes less sensitive as the temperature increases. Theoretical results also confirm that the major part of the lattice thermal conductivity reduction is associated with the point-defect scattering and phonon-phonon scattering processes.

OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS

Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.

Different Thermal Stabilities of Cation Point Defects in LaAlO_3 Bulk and Films

Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAIO3 under O-rich conditions, while the AILa antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO3 films. For LaO-terminated LaAlOa fihns, La or AI vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO2-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An AI interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlOa-related materials.

基于稀疏成像的半导体薄膜材料界面缺陷检测

复杂背景下检测半导体薄膜材料界面微小缺陷具有一定的难度,为了精准检测半导体薄膜材料界面缺陷,提出一种稀疏成像下半导体薄膜材料界面缺陷检测方法。扫描采集半导体薄膜材料界面二维图像,对含有噪声的半导体薄膜材料界面实施小波分解,获取不同频带的子图像。低频图像保持不变,选择对应的模板对高频图像滤波处理,将滤波处理后的高频图像和低频图像两者合成,获取去噪后的图像。通过机器视觉定位薄膜材料界面的缺陷位置,提取缺陷区域特征,采用稀疏成像对特征参数修正,完成半导体薄膜材料界面缺陷检测。仿真结果表明,采用所提方法可以获取更加精准的检测结果,用时比较短,满足高效与高精度检测需求。

表面局部缺陷角接触球轴承弹流润滑性能研究

根据高速角接触球轴承自旋的运动特征,同时考虑轴承高速摩擦生热的影响,建立了表面具有局部缺陷的角接触球轴承弹流润滑模型。采用多重网格法获得弹流润滑各参数数值解,同时计算出轴承油膜刚度。研究了自旋、热效应和表面局部缺陷对球轴承弹流润滑性能的影响规律,计算结果表明:考虑自旋条件时,轴承的油膜厚度减小、压力增大,油膜刚度增大;随着轴承温度升高,轴承油膜厚度减小,油膜压力和油膜刚度增大;当润滑油流经轴承表面局部缺陷时,缺陷区域轴承润滑油油膜厚度增大,油膜压力减小,而非缺陷区域轴承最小油膜厚度减小,最大油膜压力增大,油膜刚度增大。

太阳电池阵电池基板PI薄膜黏结质量检测技术

航天器太阳电池阵电池基板上PI薄膜的黏结质量直接影响基板工作寿命。为有效、迅速、准确地检测PI薄膜黏结质量,通过热循环和热真空等环境试验,对PI薄膜黏结后微观尺度、非显性化的脱黏、气泡和凸起等典型缺陷进行充分暴露;利用基于偏振成像技术的视觉检测方法,对制备的4组试验样件进行正交试验,准确识别出PI薄膜黏结区域的典型缺陷及其具体尺寸范围。试验结果表明该技术对PI薄膜黏结质量缺陷的检测效果良好。

SiC基GaN上多晶金刚石散热膜生长及其影响

通过微波等离子体化学气相沉积(MPCVD)法,在SiC基GaN高电子迁移率晶体管(HEMT)异质结构材料上生长多晶金刚石散热膜,采用光学显微镜(OM)、拉曼光谱、非接触霍尔测试系统、X射线衍射(XRD)和扫描电子显微镜(SEM)对生长样品进行表征,研究了生长温度、多晶金刚石散热膜厚度对GaN HEMT异质结构材料性能的影响。测试结果表明,当多晶金刚石生长温度为625℃,散热膜厚度为20μm时,GaN材料载流子迁移率降低9.8%,载流子浓度上升5.3%,(002)衍射峰半高宽增加40%。生长温度越高,金刚石散热膜的生长速率越快。当金刚石散热膜厚度相差不大时,生长温度越高,GaN所受拉应力越大,材料电特性衰退越明显。多晶金刚石高温生长过程中,金刚石引入的应力未对GaN结构产生破坏作用,GaN材料中没有出现孔洞等缺陷。

无菌生物护创膜在严重创伤致软组织缺损创面早期治疗中的应用效果分析

目的探讨无菌生物护创膜在严重创伤致软组织缺损创面早期治疗中的临床效果。方法选取2019年1月至2020年12月苏州大学附属第一医院收治的40例严重创伤致软组织缺损患者作为研究对象,按照不同治疗方法将其分为护创膜组(20例)与纱布组(20例),护创膜组患者在对症支持治疗的基础上局部创面早期行无菌生物护创膜联合负压封闭引流治疗,纱布组患者在对症支持治疗的基础上局部创面早期行灭菌凡士林纱布联合负压封闭引流治疗,对比观察两组患者创面疼痛评分、创面基底准备时间、创面愈合时间、住院时间、创面一次性愈合比值以及术后并发症发生情况。结果护创膜组患者治疗第7天时创面视觉模拟评分法(VAS)评分明显低于纱布组(Z=-2969,P=0003),创面基底准备时间、创面愈合时间及住院时间均明显短于纱布组(Z/t=-2394、-2782、3186,P=0017、0005、0003),而创面一次性愈合比值与纱布组无明显差异(χ^(2)=0173,P=0677);护创膜组患者术后并发症发生率为150%,与纱布组患者的术后并发症发生率200%无明显差异(χ^(2)=0173,P=0677)。结论无菌生物护创膜可有效减轻严重创伤致软组织缺损创面的疼痛程度,缩短创面基底准备时间、创面愈合时间及住院时间,具有较高的临床应用价值。

自成形硅表面微结构:表面特征及潜在应用

采用等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition, PECVD)制备掺氢非晶硅膜,并对其表面结构学进行研究。该文发现在晶体硅衬底上沉积非晶硅薄膜时,会在表面形成非均匀分布的起泡缺陷。在已制备的非晶硅薄膜上进一步沉积了氮化硅/非晶硅的交替层,在起泡缺陷原位形成了一个完美的穹顶多壳的微结构,并且没有明显的结构坍塌。该文总结了自成形穹顶微结构的3个独特的结构特性,并进一步指出了该自成形穹顶微结构在纳米光学和微机电系统中的潜在应用。

反溶剂对CsPbBr_(3)太阳电池性能的影响

分别在钙钛矿前驱体中添加一系列的反溶剂乙酸乙酯(EA)和乙腈(ACN),制备出不同形貌的CsPbBr_(3)薄膜,探究薄膜质量与太阳电池性能的内在联系。结果表明,在大气制备环境中,反溶剂有助于CsPbBr_(3)晶粒的生长,薄膜表面缺陷明显减少,太阳电池各性能参数(短路电流密度、开路电压以及填充因子)均有所提升,尤其是添加乙腈(V(PbBr_(2)/DMF)∶V(ACN)=10∶1)后,光电转换效率(PCE)从3.16%提高到7.10%。

集磁器内壁轮廓形状对磁脉冲辅助半固态钎焊接头连接质量的影响

针对磁脉冲辅助半固态钎焊工艺中使用等内径集磁器连接铜、铝管件时存在的界面氧化膜去除效果不均、扩散层深度差异较大等问题,通过数值模拟方法分析了集磁器内壁轮廓形状及其结构参数对界面冲击应力及钎料剪切流变速率的影响。为实现连接区域内界面冲击及轴向剪切流变沿轴向分布的均匀性,对集磁器形状结构参数进行了优化,并针对性地制造了相应的集磁器,在特定的工艺参数下进行了系列钎焊实验。结果表明,相较于常规等内径集磁器,优化后的集磁器能够更好地去除母材表面氧化膜,促进界面扩散反应并减少连接缺陷,扩散层厚度增加且分布更为均匀,接头性能得到有效提升。

咪唑添加剂对钙钛矿太阳能电池性能的影响

为钝化钙钛矿薄膜中的缺陷并改善薄膜质量,将咪唑(Imidazole,IM)添加到钙钛矿前驱体中,并通过旋涂法制备钙钛矿薄膜;采用X射线光电子能谱仪、扫描电子显微镜、X射线衍射仪、紫外-可见分光光度计和稳态-瞬态荧光寿命光谱仪对钙钛矿薄膜形貌、结构和性能进行表征。结果表明:IM同时具有路易斯酸性与路易斯碱性,能够有效调控钙钛矿晶体生长,增大钙钛矿晶粒,改善钙钛矿薄膜质量;IM与钙钛矿中未配位的Pb2+和I-形成络合,协同钝化薄膜表面与晶界处的Pb2+和I-缺陷;经过IM修饰的电池器件,其光电转化效率从15.43%提高到17.02%;具有较大晶粒以及较低缺陷态密度的高质量钙钛矿薄膜,可以有效阻挡水分子的入侵,提高电池器件的稳定性。基于IM添加剂成功制备了低缺陷的高质量钙钛矿薄膜,为钙钛矿太阳能电池的商业化生产提供了理论指导。

纸膜双层缺陷检测的视觉成像光场设计

为实现包装盒纸质基底层和透明膜层缺陷的同步检测,开展了对纸和膜缺陷的同步成像研究。首先,分别建立了标准球面积分光场、椭球面积分光场和弧面积分光场模型,并利用COMSOL Multiphysics 5.6对3类光场进行射线仿真,对比分析了球面积分光场下射线角度均匀性及辐照均匀性,通过正交仿真优化椭球面积分光场参数;其次,在椭球面积分光场环境、亮场前打光环境、暗场前打光环境下对包装盒成像。与此同时,对包装盒的油污、抵触、开口、泡皱、破损5项常见缺陷依次进行物理检测和机器视觉检测,验证缺陷成像的有效性。试验结果表明,在椭球面积分光场下成像,图像对纸质基底层缺陷特征、透明膜层缺陷特征均有较好的呈现效果,图像上油污、抵触、开口、泡皱、破损的物理检出率分别为96.2%、92.5%、100%、95%、92%,异常检出率分别为98.6%、97.5%、100%、100%、98.4%,缺陷类别检出率分别为97.6%、96%、100%、97%、96%。研究结果表明,椭球面积分光场光路角度和辐照强度均匀,覆透明膜包装盒的缺陷特征呈现清晰,满足工业生产的检测要求。