Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from severe carrier recombination,limiting the photovoltaic performance.Unfavorable energy band alignment at the p-n junction and defective front interface are ...Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from severe carrier recombination,limiting the photovoltaic performance.Unfavorable energy band alignment at the p-n junction and defective front interface are two main causes.Herein,oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the defects.With optimized oxygen incorporation conditions,the carrier separation and collection behavior at the front interface of the device is improved.In particular,it is found that oxygen incorporated absorber exhibits increased band bending,larger depletion region width,and suppressed absorber defects.These indicate the dynamic factors for carrier separation become stronger.Meanwhile,the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier transport.As a consequence,the champion efficiency of CZTSSe solar cells has been improved from 9.74%to 12.04%with significantly improved open-circuit voltage after optimized air-annealing condition.This work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.展开更多
A considerable efficiency gap exists between large-area perovskite solar modules and small-area perovskite solar cells.The control of forming uniform and large-area film and perovskite crystallization is still the mai...A considerable efficiency gap exists between large-area perovskite solar modules and small-area perovskite solar cells.The control of forming uniform and large-area film and perovskite crystallization is still the main obstacle restricting the efficiency of PSMs.In this work,we adopted a solid-liquid two-step film formation technique,which involved the evaporation of a lead iodide film and blade coating of an organic ammonium halide solution to prepare perovskite films.This method possesses the advantages of integrating vapor deposition and solution methods,which could apply to substrates with different roughness and avoid using toxic solvents to achieve a more uniform,large-area perovskite film.Furthermore,modification of the NiO_(x)/perovskite buried interface and introduction of Urea additives were utilized to reduce interface recombination and regulate perovskite crystallization.As a result,a large-area perovskite film possessing larger grains,fewer pinholes,and reduced defects could be achieved.The inverted PSM with an active area of 61.56 cm^(2)(10×10 cm^(2)substrate)achieved a champion power conversion efficiency of 20.56%and significantly improved stability.This method suggests an innovative approach to resolving the uniformity issue associated with large-area film fabrication.展开更多
A method for hardness measurement and evaluation of double-layer thin films on the material surface is proposed. Firstly, it is studied how to obtain the force-indentation response with the finite element method when...A method for hardness measurement and evaluation of double-layer thin films on the material surface is proposed. Firstly, it is studied how to obtain the force-indentation response with the finite element method when the indentation is less than 100 nanometers, in which current nanoindentation experiments have no reliable accuracy. The whole hardness-displacement curve and fitted equation are obtained. At last, a formula to predict the hardness of the thin film on the material surface is derived and favorably compared with experiments.展开更多
Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of ace...Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58 × 10^-3 Ω. cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.展开更多
Thickness effects of thin La0.7Sr0.3MnO3 (LSMO) films on (LaAlOa)0.3(Sr2AlTaO6)0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function...Thickness effects of thin La0.7Sr0.3MnO3 (LSMO) films on (LaAlOa)0.3(Sr2AlTaO6)0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function of thickness and differnt annealing conditions. Results reveal there could be more than one mechanism to induce vacancy-like defects. It was found that strain-induced defects mainly influence the S value of the in situ oxygenambience annealing LSMO thin films and the strain could vanish still faster along with the increase of thickness, and the oxygen-deficient induced defects mainly affect the S value of post-annealing LSMO films.展开更多
The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations (GNDs) are analytically investigated in this paper. Firstly, this defect-ener...The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations (GNDs) are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations (or pile-ups) moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.展开更多
The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics (MD) simula- tions and theoretical analysis based on the Boltzmann equation. Both the MD ...The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics (MD) simula- tions and theoretical analysis based on the Boltzmann equation. Both the MD and theoretical results show that the lattice thermal conductivity dramatically decreases with the increasing of vacancy concentration at 400 and 500 K. In addition, the dependence of vacancy concentration on the thermal conductivity of Ge thin films becomes less sensitive as the temperature increases. Theoretical results also confirm that the major part of the lattice thermal conductivity reduction is associated with the point-defect scattering and phonon-phonon scattering processes.展开更多
Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-...Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.展开更多
Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptor...Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAIO3 under O-rich conditions, while the AILa antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO3 films. For LaO-terminated LaAlOa fihns, La or AI vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO2-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An AI interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlOa-related materials.展开更多
基金supported by the National Natural Science Foundation of China(62074052,61974173,52072327)the Joint Talent Cultivation Funds of NSFC-HN(U1904192)the Science and Technology Innovation Talents in Universities of Henan Province(21HASTIT023)。
文摘Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from severe carrier recombination,limiting the photovoltaic performance.Unfavorable energy band alignment at the p-n junction and defective front interface are two main causes.Herein,oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the defects.With optimized oxygen incorporation conditions,the carrier separation and collection behavior at the front interface of the device is improved.In particular,it is found that oxygen incorporated absorber exhibits increased band bending,larger depletion region width,and suppressed absorber defects.These indicate the dynamic factors for carrier separation become stronger.Meanwhile,the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier transport.As a consequence,the champion efficiency of CZTSSe solar cells has been improved from 9.74%to 12.04%with significantly improved open-circuit voltage after optimized air-annealing condition.This work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.
基金the financial support from Shanxi Province Science and Technology Department(20201101012,202101060301016)the support from the APRC Grant of the City University of Hong Kong(9380086)+5 种基金the TCFS Grant(GHP/018/20SZ)MRP Grant(MRP/040/21X)from the Innovation and Technology Commission of Hong Kongthe Green Tech Fund(202020164)from the Environment and Ecology Bureau of Hong Kongthe GRF grants(11307621,11316422)from the Research Grants Council of Hong KongGuangdong Major Project of Basic and Applied Basic Research(2019B030302007)Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials(2019B121205002).
文摘A considerable efficiency gap exists between large-area perovskite solar modules and small-area perovskite solar cells.The control of forming uniform and large-area film and perovskite crystallization is still the main obstacle restricting the efficiency of PSMs.In this work,we adopted a solid-liquid two-step film formation technique,which involved the evaporation of a lead iodide film and blade coating of an organic ammonium halide solution to prepare perovskite films.This method possesses the advantages of integrating vapor deposition and solution methods,which could apply to substrates with different roughness and avoid using toxic solvents to achieve a more uniform,large-area perovskite film.Furthermore,modification of the NiO_(x)/perovskite buried interface and introduction of Urea additives were utilized to reduce interface recombination and regulate perovskite crystallization.As a result,a large-area perovskite film possessing larger grains,fewer pinholes,and reduced defects could be achieved.The inverted PSM with an active area of 61.56 cm^(2)(10×10 cm^(2)substrate)achieved a champion power conversion efficiency of 20.56%and significantly improved stability.This method suggests an innovative approach to resolving the uniformity issue associated with large-area film fabrication.
基金Chinese Academy of Sciences Foundation (KGCX1-11) N ational Natural Science Foundation of China (10 2 3 2 0 5 0 ) Min-istry of Science and Technology Foundation (2 0 0 2 CB412 70 6)
文摘A method for hardness measurement and evaluation of double-layer thin films on the material surface is proposed. Firstly, it is studied how to obtain the force-indentation response with the finite element method when the indentation is less than 100 nanometers, in which current nanoindentation experiments have no reliable accuracy. The whole hardness-displacement curve and fitted equation are obtained. At last, a formula to predict the hardness of the thin film on the material surface is derived and favorably compared with experiments.
基金supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602)Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500)+3 种基金the National Basic Research Program of China (Grant Nos. 2011CB201605 and 2011CB201606)the National Natural Science Foundation of China (Grant No. 60976051)International Cooperation Project between China-Greece Government (Grant No. 2009DFA62580)Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295)
文摘Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58 × 10^-3 Ω. cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.
文摘Thickness effects of thin La0.7Sr0.3MnO3 (LSMO) films on (LaAlOa)0.3(Sr2AlTaO6)0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function of thickness and differnt annealing conditions. Results reveal there could be more than one mechanism to induce vacancy-like defects. It was found that strain-induced defects mainly influence the S value of the in situ oxygenambience annealing LSMO thin films and the strain could vanish still faster along with the increase of thickness, and the oxygen-deficient induced defects mainly affect the S value of post-annealing LSMO films.
基金supported by the National Natural Science Foundation of China (10772096)
文摘The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations (GNDs) are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations (or pile-ups) moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.
基金supported by the Program for Changjiang Scholars and Innovative Research Team in the Universities of the Ministry of Education of China (No. IRT0520)
文摘The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics (MD) simula- tions and theoretical analysis based on the Boltzmann equation. Both the MD and theoretical results show that the lattice thermal conductivity dramatically decreases with the increasing of vacancy concentration at 400 and 500 K. In addition, the dependence of vacancy concentration on the thermal conductivity of Ge thin films becomes less sensitive as the temperature increases. Theoretical results also confirm that the major part of the lattice thermal conductivity reduction is associated with the point-defect scattering and phonon-phonon scattering processes.
基金This work was supported by the Chinese Academy of Sciences within"The Hundred Talent Projecr"(99-019-122288)National High Technical Research and Development Programme of China(No.2001AA513060)+1 种基金the 10th Five-Year Plan of Guangdong Province(A1100501)the National Natural Science Fundation of China(No.50376067).
文摘Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.
基金Supported by the Hebei Provincial Young Top-Notch Talent Support Program under Grant No BJRC2016the Innovative Funding Project of Graduates of Hebei University under Grant No hbu2018ss62the Midwest Universities Comprehensive Strength Promotion Project
文摘Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAIO3 under O-rich conditions, while the AILa antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO3 films. For LaO-terminated LaAlOa fihns, La or AI vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO2-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An AI interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlOa-related materials.