MgxZn1-xO （x≤0.3） thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orien...MgxZn1-xO （x≤0.3） thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of MgxZn1-xO films measured at room temperature by spectroscopic ellipsometry （SE） on the wavelength 632.8 nm are systematically decreased with the increasing of Mg content. Optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24 eV at x = 0 to 3,90 eV at x = 0.30.展开更多
基金Project supported by the National Found for Fostering Talents of Basic Science (NFFTBS) of China (Grant No. J0730318)the Natural Science Foundation of Shandong Province, China (Grant No. Y2007F02)
文摘MgxZn1-xO （x≤0.3） thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of MgxZn1-xO films measured at room temperature by spectroscopic ellipsometry （SE） on the wavelength 632.8 nm are systematically decreased with the increasing of Mg content. Optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24 eV at x = 0 to 3,90 eV at x = 0.30.
