In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on out...In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.展开更多
随着双有源全桥(dual active bridge,DAB)变换器开关频率的提升,半导体器件的开关损耗占比越来越大,基于回流功率、电感电流峰值或有效值的单目标效率优化策略的优势逐渐丧失。为提升DAB变换器的高频工况运行效率,文中对DAB最优模态与...随着双有源全桥(dual active bridge,DAB)变换器开关频率的提升,半导体器件的开关损耗占比越来越大,基于回流功率、电感电流峰值或有效值的单目标效率优化策略的优势逐渐丧失。为提升DAB变换器的高频工况运行效率,文中对DAB最优模态与优化目标进行定量分析与选择,提出一种可同时实现电感电流有效值准最优、宽范围软开通的移相策略,在该策略下轻重载工况所有开关管均可实现软开通,中载仅有两个开关管丢失软开通。为保证软开通的有效实现,根据电荷交换和死区时长两个条件推导实现软开通所需电流的统一表达式。再者,将软开通谐振过程线性化处理,所得简化表达式可与本文移相模态相结合,可实现任意开关管在任意模态下的软开通。最后,搭建6.6 k W/150 k Hz的碳化硅实验平台进行验证。实验结果表明,所研究的多目标优化策略可同时减小开通损耗与导通损耗,有效提升DAB变换器在高频工况下的运行效率。展开更多
随着宽禁带功率半导体器件的广泛使用,更高开关频率的双有源桥(dual active bridge,DAB)变换器带来了更大的开关损耗,对于软开关技术提出更高要求。为了进一步拓展零电压开通(zero-voltage switching,ZVS)范围,文中对ZVS精确模型和传统...随着宽禁带功率半导体器件的广泛使用,更高开关频率的双有源桥(dual active bridge,DAB)变换器带来了更大的开关损耗,对于软开关技术提出更高要求。为了进一步拓展零电压开通(zero-voltage switching,ZVS)范围,文中对ZVS精确模型和传统电感电流全局最优条件方法进行分析,提出一种结合励磁电流运行的移相调制策略,该策略可实现DAB变换器全功率范围内所有开关管的ZVS运行(8-ZVS运行)。在考虑开关管非线性特性和死区时间限制基础上得到更精确的ZVS模型,并推导引入励磁电流的ZVS模型。此外,所提出的控制方案具有无缝模式转换的特点,电感电流的有效值也可以达到准最佳状态。最后,搭建6kW/150kHz的高频DAB变换器样机以验证模型有效性。实验结果表明,该控制算法可以在任意模式和工况下实现8-ZVS运行,从而提升系统在轻载和中载工况下运行效率。展开更多
双有源桥(Dual Active Bridge,DAB)在需要高效能量双向流动的工作场景有广泛的应用。在高开关频率工作时,变换器开关器件结电容充放电时间无法忽略,导致扩展移相控制下DAB零电压开通(Zero Voltage Switching,ZVS)范围断续。通过分析扩...双有源桥(Dual Active Bridge,DAB)在需要高效能量双向流动的工作场景有广泛的应用。在高开关频率工作时,变换器开关器件结电容充放电时间无法忽略,导致扩展移相控制下DAB零电压开通(Zero Voltage Switching,ZVS)范围断续。通过分析扩展移相控制下双有源桥DC-DC变换器工作模态,建立高开关频率工况下DAB变换器数学模型,提出一种利用磁化电流扩宽ZVS范围的方法。在此基础上,结合电感电流应力优化算法,提出一种适用于高频工况应用的电流应力优化下的软开关控制策略。采用该控制策略,可以有效减小导通损耗,消除开关损耗,显著提升高开关频率下的变换器效率。搭建400 kHz实验样机,验证控制策略有效性。展开更多
文摘In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.
文摘随着双有源全桥(dual active bridge,DAB)变换器开关频率的提升,半导体器件的开关损耗占比越来越大,基于回流功率、电感电流峰值或有效值的单目标效率优化策略的优势逐渐丧失。为提升DAB变换器的高频工况运行效率,文中对DAB最优模态与优化目标进行定量分析与选择,提出一种可同时实现电感电流有效值准最优、宽范围软开通的移相策略,在该策略下轻重载工况所有开关管均可实现软开通,中载仅有两个开关管丢失软开通。为保证软开通的有效实现,根据电荷交换和死区时长两个条件推导实现软开通所需电流的统一表达式。再者,将软开通谐振过程线性化处理,所得简化表达式可与本文移相模态相结合,可实现任意开关管在任意模态下的软开通。最后,搭建6.6 k W/150 k Hz的碳化硅实验平台进行验证。实验结果表明,所研究的多目标优化策略可同时减小开通损耗与导通损耗,有效提升DAB变换器在高频工况下的运行效率。
文摘随着宽禁带功率半导体器件的广泛使用,更高开关频率的双有源桥(dual active bridge,DAB)变换器带来了更大的开关损耗,对于软开关技术提出更高要求。为了进一步拓展零电压开通(zero-voltage switching,ZVS)范围,文中对ZVS精确模型和传统电感电流全局最优条件方法进行分析,提出一种结合励磁电流运行的移相调制策略,该策略可实现DAB变换器全功率范围内所有开关管的ZVS运行(8-ZVS运行)。在考虑开关管非线性特性和死区时间限制基础上得到更精确的ZVS模型,并推导引入励磁电流的ZVS模型。此外,所提出的控制方案具有无缝模式转换的特点,电感电流的有效值也可以达到准最佳状态。最后,搭建6kW/150kHz的高频DAB变换器样机以验证模型有效性。实验结果表明,该控制算法可以在任意模式和工况下实现8-ZVS运行,从而提升系统在轻载和中载工况下运行效率。
文摘双有源桥(Dual Active Bridge,DAB)在需要高效能量双向流动的工作场景有广泛的应用。在高开关频率工作时,变换器开关器件结电容充放电时间无法忽略,导致扩展移相控制下DAB零电压开通(Zero Voltage Switching,ZVS)范围断续。通过分析扩展移相控制下双有源桥DC-DC变换器工作模态,建立高开关频率工况下DAB变换器数学模型,提出一种利用磁化电流扩宽ZVS范围的方法。在此基础上,结合电感电流应力优化算法,提出一种适用于高频工况应用的电流应力优化下的软开关控制策略。采用该控制策略,可以有效减小导通损耗,消除开关损耗,显著提升高开关频率下的变换器效率。搭建400 kHz实验样机,验证控制策略有效性。
