Fe-N films were prepared on Si substrate by dual ion beam sputtering (DIBS). It is found that the crystal structure of the films varies from α-Fe, to ε-Fe2-3N, ε-Fe2-3N +γ-Fe4N, and finally γ'-Fe4N with the i...Fe-N films were prepared on Si substrate by dual ion beam sputtering (DIBS). It is found that the crystal structure of the films varies from α-Fe, to ε-Fe2-3N, ε-Fe2-3N +γ-Fe4N, and finally γ'-Fe4N with the increase in substrate temperature (TS). The magnetic properties of the films were investigated by a vibrating sample magnetometer (VSM). The structure of the films is insensitive to the ratios of N2/Ar in main ion source(MIS), and is mainly influenced by the substrate temperature (Ts).展开更多
Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray diffraction （XRD）, atom force microscopy （AFM）, and Fourier transform infrared s...Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray diffraction （XRD）, atom force microscopy （AFM）, and Fourier transform infrared spectrum （FTIR） were employed to measure the crystalline structure, surface morphology, and infrared optical transmittance. The phase transition properties were characterized by transmittance. The results show that the annealed vanadium oxide thin film is composed of monoclinic VO2, with preferred orientation of （011）. The maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80 C. The reversible changes in optical transmittance against temperature were observed. The change rate of transmittance at short wavelength is higher than that at long wavelength at the same temperature across semiconductor-metal phase transition. This phenomenon was discussed using diffraction effect.展开更多
基金Jiangsu Province key laboratory of thin film with Grant No. K2021.
文摘Fe-N films were prepared on Si substrate by dual ion beam sputtering (DIBS). It is found that the crystal structure of the films varies from α-Fe, to ε-Fe2-3N, ε-Fe2-3N +γ-Fe4N, and finally γ'-Fe4N with the increase in substrate temperature (TS). The magnetic properties of the films were investigated by a vibrating sample magnetometer (VSM). The structure of the films is insensitive to the ratios of N2/Ar in main ion source(MIS), and is mainly influenced by the substrate temperature (Ts).
基金supported by the National High-Tech Research and Development Program of China(No.2008AA031401)the National Natural Science Foundation of China (No.60771019)+2 种基金the Natural Science Foundation of Tianjin, China (No.08JCZD-JC17500)the StateKey Lab on Integrated Optoelectronics (No.2010KFB001)The Research Fund for the Doctoral Program of Higher Education of China (No.20100032120029)
文摘Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray diffraction （XRD）, atom force microscopy （AFM）, and Fourier transform infrared spectrum （FTIR） were employed to measure the crystalline structure, surface morphology, and infrared optical transmittance. The phase transition properties were characterized by transmittance. The results show that the annealed vanadium oxide thin film is composed of monoclinic VO2, with preferred orientation of （011）. The maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80 C. The reversible changes in optical transmittance against temperature were observed. The change rate of transmittance at short wavelength is higher than that at long wavelength at the same temperature across semiconductor-metal phase transition. This phenomenon was discussed using diffraction effect.
