E波段矩形环对角双杆行波管的研究

高功率、宽频带是当前科研人员研究行波管的主流方向,中国工信部最新规定E波段的频率范围在71-76 GHz/81-86 GHz。虽然传统的环圈慢波结构有更高的互作用阻抗,但是当其达到E波段及以上由于其结构特点在现实中难以加工,所以难以实现工作在E波段,为了提升输出功率,本文设计了E波段矩形环对角双杆慢波结构行波管的研究,对其进行注波互作用模拟仿真和计算,带状电子注采用19.1 kV的电压,电流为0.14 A的条件下,行波管可获得最大400 W的瞬时输出功率,增益为46.02 dB、电子效率15%。

E-beam degradation of thiamphenicol and florfenicol

Thiamphenicol(THA) and florfenicol(FLO) aqueous solutions were irradiated to different doses by 1 MeV electron beams,and redox reactions of THA/FLO and radicals of OH,e_(eq)^- and ~·H were investigated under various conditions.The results showed that at 8 kGy,the decomposition rate of THA and FLO was 97.2%and 98.5%, respectively.Quantitative and qualitative analysis indicated that OH played a key role in E-beam degradation of the THA and FLO in aqueous solutions,and e_(eq)^- and ~·H radicals could initiate the degradation,too.Seven primary products of the THA and FLO degradation were identified.These indicate that E-beam radiation is an effective method to reduce THA and FLO in aqueous solutions.

E-beam radiolysis of aqueous dimethyl phthalate solution

To investigate the influence of radiolysis on kinetics and factors of dimethyl phthalate(DMP),the aqueous DMP solution is degraded by 1.8 MeV E-beam,following pseudo-first-order kinetics.The rate constant of DMP degradation decreased exponentially with increasing initial DMP concentration.The DMP is favorably degraded by radical scavengers under its low concentration and alkaline condition.At high doses,the DMP is attacked by eaq-and ·OH,producing monomethyl phthalate,phthalate acid,and a series of aliphatic carboxylic acids,which are completelymineralized into H2O and CO2.

Electron-beam induced degradation of bisphenol A

E-beam degradation of bisphenol A(BPA) was carried out,under reductive condition of ethanol-water solution and oxidative condition of acetonitrile-water solution.The degradation efficiency is higher in oxidative condition than that in reductive condition,and increases with the dose but decreased with increasing initial concentration.The BPA radiolysis follows the pseudo-first-order kinetics.Adding H_2O_2,or neutral condition,does not benefit BPA degradation in oxidative conditions.Pulsed radiolysis was used to investigate mechanism of the BPA radiolysis.The rate constant for BPA reaction with OH(1.85×10^(10) L·mor^(-1)·s^(-1)) is about an order of magnitude higher than that with e_(aq)^-(1.80×l0~9 L·mor^(-1)·s^(-1)).The degradation products were analyzed by ion chromatograph.Smaller molecules such as formic acid and acetic acid were detected,indicating that ^-OH attacks the BPA molecule.The work is of significance for the practical E-beam treatment of waste water containing BPA.

Hydrogen and Ozone SAW Based Gas Sensors with RF Magnetron Sputtered InO_x and Electron Beam Evaporated SiN_y

Layered Surface Acoustic Wave (SAW) devices with an InO_x/SiN_u/36°YX LiTaO_3 structure were investigated for sensing low concentrations of hydrogen (H_2) and ozone (O_3) at different operating temperatures.The sensor consists of a 1μm thick silicon nitride (SiN_y) intermediate layer deposited by electron beam evaporation on a 36°Y-cut X-propagating piezoelectric lithium tantalate (LiTaO_3) substrate and a 100 nm thin indium oxide (InO_x) sensing layer deposited by R.F.magnetron sputtering.The device fabrication is described and the performance of the sensor is analyzed in terms of response magnitude as a function of operating temperature.Large frequency shifts of 360 kHz for 600μg/g of H_2 and 92 kHz for 40 ng/g O_3 were recorded.In addition,the surface morphology of the deposited films were investigated by Atomic Force Microscopy (AFM) and the chemical composition by X-Ray Photoelectron Spectroscopy (XPS) to correlate gas-sensing behavior to structural characteristics of the thin film.

Dynamic characteristics of charging effects on the dielectric constant due to E-beam irradiation： a numerical simulation

A series of synthetic variations of material intrinsic properties always come with charging phenomena due to electron beam irradiation. The effects of charging on the dielectric constant will influence the charging dynamic in return. In this paper, we propose a numerical simulation for investigating the dynamic characteristics of charging effects on the dielectric constant due to electron beam irradiation. The scattering process between electrons and atoms is calculated considering elastic and inelastic collisions via the Rutherford model and the fast secondary electron model, respectively. Internal charge drift due to E-field, density gradient caused diffusion, charges trap by material defect, free electron and hole neutralization, and variation in the internal dielectric constant are considered when simulating the transport process. The dynamics of electron and hole distributions and charging states are demonstrated during E-beam irradiation. As a function of material nonlinear susceptibility and primary energy, the dynamics of charging states and dielectric constants are then presented in the charging process. It is found that the variation in the internal dielectric constant is more with respect to the depth and irradiation time. Material with a larger nonlinear susceptibility corresponds a faster charging enhancement. In addition, the effective dielectric constant and the surface potential have a linear relationship in the charging balance. Nevertheless, with shrinking charging affect range, the situation with a higher energy primary electron comes with less dielectric constant variation. The proposed numerical simulation mode of the charging process and the results presented in this study offer a comprehensive insight into the complicated charging phenomena in electron irradiation related fields.

Electron Beam Guns for High Energy Electron Accelerators: An Overview

Thermionic electron beam is a fundamental part of all types of linear accelerators around the world in the field of Experimental High Energy Physics. Thermionic beam is very inexpensive and simple to produce. In this work, we give an overview of generation, design and applications of the electron beam with particular reference to e-beam generation at high energy linear accelerators. Experimental data are presented in tabular form for ready reference. We also make an evaluation of these high energy sources with our in-house designed e-beam gun. Finally, a comparison has been presented in terms of characteristic parameters of all these high performance sources.

Investigation on the Effect of Film Thickness on the Surface Morphology, Electrical and Optical Properties of E-Beam Deposited Indium Tin Oxide (ITO) Thin Film

The following article has been retracted due to the fact that the authors practise fraud. The scientific community takes a very strong view on this matter, and the Advances in Materials Physics and Chemistry treats all unethical behavior seriously. This paper published in Vol. 4 No. 10 194-202, 2014 has been removed from this site. ? Title: Investigation on the Effect of Film Thickness on the Surface Morphology, Electrical and Optical Properties of E-Beam Deposited Indium Tin Oxide (ITO) Thin Film ? Authors: Golam Saklayen, Shahinul Islam, Ferdous Rahman, Abu Bakar

Effects of Different Titanium Sub-oxide on the Properties of Titanium Dioxide Thin Films Prepared by E-beam Evaporation Deposition with Ion Auxiliary

TiO2 thin films were prepared with Ti2O3, Ti3O5 and TiO2 as raw materials, by electron-beam evaporation deposition, using O^2- ion beam （ O2 purity up to 99.99% ） as auxiliary means. The crystal structures of the samples were inspected by the X-ray diffraction （XRD） method, and the evaporation character of warious raw materials was analyzed. Transmittance spectra were measured through a U-3310 spectrophotometer （ wavelength ranging from 200 nm to 900 nm）. The refractive index n and the thickness of films were determined from transmission spectra. The experimental results show that the thin films taking Ti2O3 as their raw material have a strong absorption, when taking Ti3O5 and TiO2 as raw materials, the thin films would have good optical properties. The experiments also show that, the crystal structure of all thin films is amorphous before post-annealing and the Ti3O5 is a congruent evaporation phase in the Ti-O system.

Fabrication of Al/AlO_x/Al junctions using pre-exposure technique at 30-keV e-beam voltage

We fabricate high-quality A1/A1Ox/A1 junctions using improved bridge and bridge-free techniques at 30-keV e-beam voltage,in which the length of undercut and the size of junction can be well controlled by the pre-exposure technique.The dose window is 5 times as large as that used in the usual Dolan bridge technique,making this technique much more robust.Similar results,comparable with those achieved using a 100-keV e-beam writer,are obtained,which indicate that the 30-keV e-beam writer could be an economic choice for the superconducting qubit fabrication.

Depolymerization of <i>α</i>- &<i>β</i>-Chitosan by <i>e</i>-Beam Irradiation

α- and β-chitosan with molecular weight of 190,000 and 800,000 respectively, were depolymerized by e-beam irradiation with various doses. The radiation yield of scission (Gs) and degradation rate of the chitosans were identified. The synergistic chemical degradation in the presence of hydrogen peroxide is more effective at lower doses. Mw of β-chitosan was dramatically decreased from 800,000 to 21,030 at the irradiation dose 5 kGy, on the other hand, that of α-chitosan was decreased much more gradually from 190,000 to 36,000. The values of Gs at 10 kGy in the solution without H2O2 and with H2O2 were respectively 6.09 × 10-5 mol/cal and 30.6 × 10-5 mol/cal for α-Chitosan, and 8.18 × 10-5 mol/cal and 43.8 × 10-5 mol/cal for β-chitosan. It was obviously effective on depolymerization by using the combination of e-beam and H2O2. α-Chitosan molecules are likely to adopt a diffuse conformation in the solution and make the different morphologies depending on the concentration.

Deposition of Carbon Particulates Surfaces on Zeolites by Electron-Beam Evaporation of Graphite

Disordered carbon particulates were deposited on the surface of natural acid treated zeolite through graphite evaporation by electron beam to improve adsorption properties of the porous material. This study focuses on the development of the new material and not on applications. The effect of acid treatment and carbon deposition on the physical properties of the natural material was investigated. The zeolites were characterized via spectroscopic and microscopic methods, thermal analysis, and gas sorption analysis. Analysis revealed that the surface area and volume increased by a factor of ten after the carbon-coating was deposited onto the zeolite surface and indicated that the Si/Al ratio was higher with the acid treated sample. The acid treatment promoted dealumination of the zeolite and increased overall surface area, whereas the carbon coating re-aluminated the zeolite while adding silica back to the main molecular framework, thus increasing crystallinity and thermal stability and further improving the high surface area produced by the acid treatment.

Contribution for Efficient Planning of Millimeter Wave Frequencies: Case of the 80 GHz E-Band for High-Speed Broadband Transmissions

Due to the very high demand for Internet data capacity from mobile and fixed customers as well as the saturation of conventional frequency bands by numerous services, many countries have opened the E band, for broadcasting services. E-band involves the creation of a significant number of links in a given area. The present work addressed the problem that arises in the context of transmission is that of assigning the frequencies of this band to these multiple transmission links. The aim of this work is to study and plan the radio links of the 80 GHz frequency and to implement them in a tool in order to define an optimal distribution on the telecommunications network by guaranteeing maximum flow of data traffic while minimizing the interference. The contribution of this work is part of its unique subject: the planning of E-band frequencies for improving the quality of service of transmission in the network of telecommunications operators. Also, it intends to contribute to the resolution of unsatisfied situations of poor planning of E-band radio frequencies in telecommunications networks. With the aim of opening several opportunities for alternative high-speed data transport solutions, our work has helped prove that E-band transmission links are very efficient with capacities in the gigabyte range.

E型波导振荡器反转永磁引导系统初步设计

开展了E型波导振荡器永磁引导系统的物理与设计研究。对强流相对论电子束在理想方波形反转引导磁场中的传输条件进行了理论分析,给出了相对论条件下轴对称复合场中电子束的傍轴轨迹方程和最小引导磁场的计算公式。根据该理论分析,针对C波段E型波导振荡器高频互作用区的结构特点,设计了反转永磁引导系统,同时给出了漂移管内各个磁场分量的表达式。该系统由轴径向磁化空心永磁体组合产生反转引导磁场,永磁体的总质量约为2.5 kg。采用爆炸发射阴极,展示了强流相对论电子束在该引导磁场中的传输特性。研究结果显示,所设计反转永磁引导系统可引导400 kV、580 A的环形电子束稳定通过半径为6 mm的漂移管,带入器件,得到112.5 MW的4.8 GHz微波输出功率,效率为48.49%,确定了反转永磁引导系统应用于E型波导振荡器的技术可能性。

扭转梁悬架和E型四连杆悬架对比分析

乘用车后悬架类型较多,主流车后悬架大量采用的是扭转梁悬架和E型四连杆悬架,但两种悬架形式在布置空间、价格、性能等方面均存在一定区别。文章从结构、承载能力、性能等维度对主流车常见的两种后悬架结构——扭转梁悬架和E型四连杆悬架进行对比分析。结果可知,扭转梁悬架仅在后备箱空间、轮胎磨损方面有优势,而E型四连杆悬架在承载能力、四驱空间、操纵稳定性、平顺性方面都具有优势。建议成本优先的A0、A级车采用经济型扭转梁悬架;操稳和舒适优先的A、B级车采用成本较高的E型四连杆悬架。该分析结论为汽车研发期间后悬架类型的选择提供了一定的参考依据。

NEA GaN光电阴极的制备及其应用

近年来,随着晶体生长技术的发展,GaN基材料的生长技术与生长工艺取得了重大突破。基于NEA的GaN紫外光电阴极是非常理想的新型紫外光电阴极。本文重点探讨了NEA GaN光电阴极材料的金属有机化学汽相沉积(MOCVD)、分子束外延(MBE)和卤化物汽相外延(HVPE)等主流生长技术的优缺点,介绍了两步生长、横向外延生长及悬空外延技术等新工艺。讨论了GaN光电阴极的性能特点、制备方法以及在紫外光电探测器和电子束平版印刷术领域的应用状况。

应用于PHEMT器件的深亚微米T形栅光刻技术

PHEMT器件和基于它的高频单片集成电路广泛应用于现代微波/毫米波系统。当PHEMT器件的栅长缩短到足够短的时候,沿着栅宽方向的寄生电阻会影响PHEMT器件的性能。为了解决这个问题,一种具有大截面面积而底部长度却很小的T形栅结构通常被用于制作PHEMT器件,因为这种结构可以有效地减少由于栅寄生电阻而引起的晶体管噪声。对几种常用的制作深亚微米T形栅的三种光刻技术即光学光刻、电子束光刻、X射线光刻技术进行了比较分析。对于光学光刻技术,通常需要采用移相和光学邻近效应校正技术,它的制作成本低,但是很难用于制作深亚微米T形栅;对于电子束光刻技术,通常需要采用高灵敏度和低灵敏度的多层胶技术,虽然它的栅长可以制作到非常小,但是它的生产成本非常高,而且它的生产效率非常低;对于X射线光刻技术,它不仅可以用于制作深亚微米T形栅,而且它的生产效率非常高,T形栅的形状可以非常容易控制。

蒸发制备金属薄膜实现MEMS工艺中电互连

介绍了利用蒸发方法制备金属薄膜来实现MEMS工艺中的互连,采用剥离方法制作金属互连柱。分别在剥离层为双层AZ5214负胶、聚酰亚胺(ZKPI-305IID)和AZ5214负胶、ENPI剥离胶的情况下,实验并制备了金属Ni互连柱(双层AZ5214金属柱高1.86μm,聚酰亚胺(ZKPI-305IID)和AZ5214柱高2.0μm,ENPI柱高1.5μm),都起到了较好的互连作用。

ZEP520正性电子抗蚀剂的工艺研究

详细研究了ZEP520在Si衬底上的对比度、灵敏度、分辨率,并分析了曝光剂量、抗蚀剂厚度对ZEP520线条和圆孔尺寸的影响;同时还初步研究了ZEP520在GaAs衬底上的曝光工艺。实验结果表明,ZEP520的灵敏度远高于PMMA,在Si和GaAs上用ZEP520能分别制作出100nm和130nm宽的细线条,通过预烘GaAs衬底,可以消除ZEP520中的裂纹,因此用ZEP520制作器件或电路中各种细小凹槽图形是十分有利的。

电子束光刻制备5000line/mm光栅掩模关键技术研究

为了制备高线密度X射线透射光栅掩模,分析了电子束光刻中场拼接对高线密度光栅图形的影响;利用几何校正技术和低灵敏度的950 k的PMMA电子束抗蚀剂,克服了电子束的邻近效应对厚胶图形曝光的影响。采用电子束光刻和微电镀的方法制备了5000 line/mm X射线透射光栅的掩模,并将栅线宽度精确控制在100 nm^110 nm,为X射线光刻复制高线密度X射线透射光栅创造了有利条件。