Class E变换器结构简单,变换效率高,有良好的发展前景。论文将磁集成技术应用到隔离型Class E变换器中,减小磁性元件的体积、重量、提高变换器的功率密度。文中详细分析了利用变压器漏感以及采用独立绕组两种磁集成方案,在此基础上,制...Class E变换器结构简单,变换效率高,有良好的发展前景。论文将磁集成技术应用到隔离型Class E变换器中,减小磁性元件的体积、重量、提高变换器的功率密度。文中详细分析了利用变压器漏感以及采用独立绕组两种磁集成方案,在此基础上,制作了输入12V、输出功率21W、输出电流0.43A的原理样机,通过实验验证了磁集成方案的有效性,从实验结果可以得出采用磁集成技术后,变换器中磁件的体积和重量明显降低,且变换器的效率有所提高。展开更多
This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a h...This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a high 37 dB output power dynamic range with good average power adding efficiency. The measurement results show that the PA achieves a high power gain of 23 dBm and power added efficiency (PAE) by 38%. The circuit was post layout simulated in a standard 0.18 μm CMOS technology.展开更多
基于0.25μm GaN HEMT设计了一种工作于C波段、结构简单、宽带高效的E类功率放大器。针对单片微波集成电路(MMIC)功率放大器设计中射频扼流圈所占面积较大且难以实现的问题,采用有限元直流馈电电感替代扼流圈电感,抑制晶体管寄生参数C_(...基于0.25μm GaN HEMT设计了一种工作于C波段、结构简单、宽带高效的E类功率放大器。针对单片微波集成电路(MMIC)功率放大器设计中射频扼流圈所占面积较大且难以实现的问题,采用有限元直流馈电电感替代扼流圈电感,抑制晶体管寄生参数C_(ds)对最高工作频率的影响,并采用低Q值混合参数匹配网络,将功率放大器电路输入输出的最佳阻抗匹配到标准阻抗50Ω。版图后仿真结果表明,在4.1~4.9 GHz工作频段内,功率附加效率为51.309%~58.050%,平均增益大于11 dB,输出功率大于41 dBm。版图尺寸为2.7 mm×1.4 mm。展开更多
文摘This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a high 37 dB output power dynamic range with good average power adding efficiency. The measurement results show that the PA achieves a high power gain of 23 dBm and power added efficiency (PAE) by 38%. The circuit was post layout simulated in a standard 0.18 μm CMOS technology.
