Class E变换器结构简单,变换效率高,有良好的发展前景。论文将磁集成技术应用到隔离型Class E变换器中,减小磁性元件的体积、重量、提高变换器的功率密度。文中详细分析了利用变压器漏感以及采用独立绕组两种磁集成方案,在此基础上,制...Class E变换器结构简单,变换效率高,有良好的发展前景。论文将磁集成技术应用到隔离型Class E变换器中,减小磁性元件的体积、重量、提高变换器的功率密度。文中详细分析了利用变压器漏感以及采用独立绕组两种磁集成方案,在此基础上,制作了输入12V、输出功率21W、输出电流0.43A的原理样机,通过实验验证了磁集成方案的有效性,从实验结果可以得出采用磁集成技术后,变换器中磁件的体积和重量明显降低,且变换器的效率有所提高。展开更多
This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a h...This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a high 37 dB output power dynamic range with good average power adding efficiency. The measurement results show that the PA achieves a high power gain of 23 dBm and power added efficiency (PAE) by 38%. The circuit was post layout simulated in a standard 0.18 μm CMOS technology.展开更多
文摘This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a high 37 dB output power dynamic range with good average power adding efficiency. The measurement results show that the PA achieves a high power gain of 23 dBm and power added efficiency (PAE) by 38%. The circuit was post layout simulated in a standard 0.18 μm CMOS technology.
