This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana...This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.展开更多
The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specification...The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.展开更多
The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improve...The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.展开更多
This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a h...This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a high 37 dB output power dynamic range with good average power adding efficiency. The measurement results show that the PA achieves a high power gain of 23 dBm and power added efficiency (PAE) by 38%. The circuit was post layout simulated in a standard 0.18 μm CMOS technology.展开更多
This paper presents a system-level method to decrease the power consumption of integrated audio Class-G amplifiers for mobile phones by using the same implementation of the level detector, but by changing the paramete...This paper presents a system-level method to decrease the power consumption of integrated audio Class-G amplifiers for mobile phones by using the same implementation of the level detector, but by changing the parameters of the switching algorithm. This method uses an optimization based on a simplified model simulation to quickly find the best power supply switching strategy in order to decrease the losses of the internal Class-AB amplifier. Using a few relevant equations of Class-G on the electrical level and by reducing the number of calculation points, this model can dramatically reduce the calculation time to allow power consumption evaluation in realistic case conditions compared to the currently available tools. This simplified model also evaluates the audio quality reproduction thanks to a psycho-acoustic method. The model has been validated by comparing model results and practical measurements on two industrial circuits. This proposed model is used by an optimizer based on a genetic algorithm associated with a pattern search algorithm to find the best power supply switching strategy for the internal Class-AB amplifier. The optimization results improve life-time performance by saving at least 25% in power consumption for typical use-case (1mW) compared to the industrial circuit studied and without losses in audio quality.展开更多
An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influ...An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.展开更多
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadb...This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.展开更多
This paper presents a high efficiency Doherty power amplifier suitable for TV band applications. A class AB power amplifier is firstly implemented using a commercial GaN HEMT from Cree Incorporation, achieving a high ...This paper presents a high efficiency Doherty power amplifier suitable for TV band applications. A class AB power amplifier is firstly implemented using a commercial GaN HEMT from Cree Incorporation, achieving a high power-added-efficiency of 77.78% and a 40.593 dBm output power with an associated gain of 21.65 dB. The Doherty amplifier has then been designed following the previous class AB scheme for the main amplifier and a class C scheme for the peak one. This amplifier attained a high power-added-efficiency of 81.94%, a 42.77 dBm output power, an associated gain of 21.32 dB, and an operating frequency bandwidth between 550 and 1000 MHz (58.06% fractional bandwidth) which made it suitable for TV band applications.展开更多
To satisfy the design requirements of analog-to-digital converter （ADC） of high speed sampling system in an infrared focal plane array tester with 1024 × 1024 pixels, a first inter-stage amplifier of 12-bit 40-...To satisfy the design requirements of analog-to-digital converter （ADC） of high speed sampling system in an infrared focal plane array tester with 1024 × 1024 pixels, a first inter-stage amplifier of 12-bit 40- Msample/s pipelined ADC was designed with 0. 35 μm CMOS technology. On the basis of traditional two-stage amplifier, the cross-coupled class AB output stage and cascode compensation were adopted to improve the output vohage swing and bandwidth. Power dissipation was optimized with math tools. Circuit and layout design were completed. Simulation results show that the designed amplifier has good performance of 95 dB dc gain, ±2 V output voltage swing, 190 MHz bandwidth and 63° phase margin with feedback factor 1/4, 33 mW power dissipation and so on, which can meet the system requirements.展开更多
Class E变换器结构简单,变换效率高,有良好的发展前景。论文将磁集成技术应用到隔离型Class E变换器中,减小磁性元件的体积、重量、提高变换器的功率密度。文中详细分析了利用变压器漏感以及采用独立绕组两种磁集成方案,在此基础上,制...Class E变换器结构简单,变换效率高,有良好的发展前景。论文将磁集成技术应用到隔离型Class E变换器中,减小磁性元件的体积、重量、提高变换器的功率密度。文中详细分析了利用变压器漏感以及采用独立绕组两种磁集成方案,在此基础上,制作了输入12V、输出功率21W、输出电流0.43A的原理样机,通过实验验证了磁集成方案的有效性,从实验结果可以得出采用磁集成技术后,变换器中磁件的体积和重量明显降低,且变换器的效率有所提高。展开更多
Due to e-business' s variety of customers with different navigational patterns and demands, multiclass queuing network is a natural performance model for it. The open multi-class queuing network(QN) models are bas...Due to e-business' s variety of customers with different navigational patterns and demands, multiclass queuing network is a natural performance model for it. The open multi-class queuing network(QN) models are based on the assumption that no service center is saturated as a result of the combined loads of all the classes. Several formulas are used to calculate performance measures, including throughput, residence time, queue length, response time and the average number of requests. The solution technique of closed multi-class QN models is an approximate mean value analysis algorithm (MVA) based on three key equations, because the exact algorithm needs huge time and space requirement. As mixed multi-class QN models, include some open and some closed classes, the open classes should be eliminated to create a closed multi-class QN so that the closed model algorithm can be applied. Some corresponding examples are given to show how to apply the algorithms mentioned in this article. These examples indicate that multi-class QN is a reasonably accurate model of e-business and can be solved efficiently.展开更多
A novel method for analysing the performance of power saving class of Type III in IEEE 802.16e is proposed, which is applicable to design, maintenance and management for mobile wireless metropolitan area network. Cons...A novel method for analysing the performance of power saving class of Type III in IEEE 802.16e is proposed, which is applicable to design, maintenance and management for mobile wireless metropolitan area network. Considering the memoryless nature of user initiated packet arrival, a Geom/G/1 queue model with multiple vacations and setup period is built to capture the principle for the power saving class of Type III. By using an embedded Markov chain method and the boundary state variable theory, we obtain the queueing measures such as queueing length, waiting time and busy cycle in steady state. Correspondingly, we derive explicitly the performance measures for the power saving class of Type III in terms of handover ratio, energy saving ratio, and average packet response time. Based on numerical results, we develop a cost function to determine numerically the optimal length of sleep window and the minimal cost with different offered loads.展开更多
文摘This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.
文摘The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.
文摘The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.
文摘This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a high 37 dB output power dynamic range with good average power adding efficiency. The measurement results show that the PA achieves a high power gain of 23 dBm and power added efficiency (PAE) by 38%. The circuit was post layout simulated in a standard 0.18 μm CMOS technology.
文摘This paper presents a system-level method to decrease the power consumption of integrated audio Class-G amplifiers for mobile phones by using the same implementation of the level detector, but by changing the parameters of the switching algorithm. This method uses an optimization based on a simplified model simulation to quickly find the best power supply switching strategy in order to decrease the losses of the internal Class-AB amplifier. Using a few relevant equations of Class-G on the electrical level and by reducing the number of calculation points, this model can dramatically reduce the calculation time to allow power consumption evaluation in realistic case conditions compared to the currently available tools. This simplified model also evaluates the audio quality reproduction thanks to a psycho-acoustic method. The model has been validated by comparing model results and practical measurements on two industrial circuits. This proposed model is used by an optimizer based on a genetic algorithm associated with a pattern search algorithm to find the best power supply switching strategy for the internal Class-AB amplifier. The optimization results improve life-time performance by saving at least 25% in power consumption for typical use-case (1mW) compared to the industrial circuit studied and without losses in audio quality.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016801)
文摘An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.
文摘This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.
文摘This paper presents a high efficiency Doherty power amplifier suitable for TV band applications. A class AB power amplifier is firstly implemented using a commercial GaN HEMT from Cree Incorporation, achieving a high power-added-efficiency of 77.78% and a 40.593 dBm output power with an associated gain of 21.65 dB. The Doherty amplifier has then been designed following the previous class AB scheme for the main amplifier and a class C scheme for the peak one. This amplifier attained a high power-added-efficiency of 81.94%, a 42.77 dBm output power, an associated gain of 21.32 dB, and an operating frequency bandwidth between 550 and 1000 MHz (58.06% fractional bandwidth) which made it suitable for TV band applications.
文摘To satisfy the design requirements of analog-to-digital converter （ADC） of high speed sampling system in an infrared focal plane array tester with 1024 × 1024 pixels, a first inter-stage amplifier of 12-bit 40- Msample/s pipelined ADC was designed with 0. 35 μm CMOS technology. On the basis of traditional two-stage amplifier, the cross-coupled class AB output stage and cascode compensation were adopted to improve the output vohage swing and bandwidth. Power dissipation was optimized with math tools. Circuit and layout design were completed. Simulation results show that the designed amplifier has good performance of 95 dB dc gain, ±2 V output voltage swing, 190 MHz bandwidth and 63° phase margin with feedback factor 1/4, 33 mW power dissipation and so on, which can meet the system requirements.
文摘Due to e-business' s variety of customers with different navigational patterns and demands, multiclass queuing network is a natural performance model for it. The open multi-class queuing network(QN) models are based on the assumption that no service center is saturated as a result of the combined loads of all the classes. Several formulas are used to calculate performance measures, including throughput, residence time, queue length, response time and the average number of requests. The solution technique of closed multi-class QN models is an approximate mean value analysis algorithm (MVA) based on three key equations, because the exact algorithm needs huge time and space requirement. As mixed multi-class QN models, include some open and some closed classes, the open classes should be eliminated to create a closed multi-class QN so that the closed model algorithm can be applied. Some corresponding examples are given to show how to apply the algorithms mentioned in this article. These examples indicate that multi-class QN is a reasonably accurate model of e-business and can be solved efficiently.
基金Supported by the National Natural Science Foundation of China (No.10671170,60773100)the Natural Science Foundation of Hebei Province,China (No.2009000475)
文摘A novel method for analysing the performance of power saving class of Type III in IEEE 802.16e is proposed, which is applicable to design, maintenance and management for mobile wireless metropolitan area network. Considering the memoryless nature of user initiated packet arrival, a Geom/G/1 queue model with multiple vacations and setup period is built to capture the principle for the power saving class of Type III. By using an embedded Markov chain method and the boundary state variable theory, we obtain the queueing measures such as queueing length, waiting time and busy cycle in steady state. Correspondingly, we derive explicitly the performance measures for the power saving class of Type III in terms of handover ratio, energy saving ratio, and average packet response time. Based on numerical results, we develop a cost function to determine numerically the optimal length of sleep window and the minimal cost with different offered loads.
