首先测试了Cascode结构的氮化镓增强型高电子迁移率晶体管(GaN E-HEMT)的输出、转移特性曲线,分析了导通电阻、输入电容等影响开关特性的电参数。接着分析了单相逆变电路结构,研究表明,采用GaN E-HEMT可极大地减小单相逆变电路的输出滤...首先测试了Cascode结构的氮化镓增强型高电子迁移率晶体管(GaN E-HEMT)的输出、转移特性曲线,分析了导通电阻、输入电容等影响开关特性的电参数。接着分析了单相逆变电路结构,研究表明,采用GaN E-HEMT可极大地减小单相逆变电路的输出滤波电容、电感的体积。最后,比较分析了影响Cascode GaN E-HEMT和Si基MOSFET的损耗参数,并基于这两种器件结构分别搭建了两种单相逆变电路。测试结果表明,工作频率为8~90 kHz时,基于Cascode GaN E-HEMT的逆变电路的转换效率为90%以上,温度维持于25.3℃~29.3℃范围。基于Cascode GaN E-HEMT的逆变电路的总体性能优于基于Si基MOSFET的逆变电路。展开更多
The degradation mechanism of enhancement-mode Al Ga N/Ga N high electron mobility transistors（HEMTs） fabricated by fluorine plasma ion implantation technology is one major concern of HEMT＇s reliability. It is obser...The degradation mechanism of enhancement-mode Al Ga N/Ga N high electron mobility transistors（HEMTs） fabricated by fluorine plasma ion implantation technology is one major concern of HEMT＇s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the Al Ga N barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the Al Ga N barrier layer by electrons injected from 2DEG channel.Furthermore, our results show that there are few new traps generated in the Al Ga N barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons.展开更多
A voltage-controlled ring oscillator （VCO） based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor （HEMT） logic is proposed. An enhancement-mode HEMT （E-HEMT） is fabricated, whose th...A voltage-controlled ring oscillator （VCO） based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor （HEMT） logic is proposed. An enhancement-mode HEMT （E-HEMT） is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.展开更多
A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0...A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0.7N） as a barrier layer and relies on silicon nitride （SIN） passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide （AL2O3） by atomic layer deposition （ALD） on A1GaN surface would not increase the 2DEG density in the heterointerface. ALD AL2O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length （LG） of 1 μm showed a maximum drain current density （IDs） of 657 mA/mm, a maximum extrinsic transconductance （gin） of 187 mS/ram and a threshold voltage （Vth） of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of AL2O3 gate insulator. This provided an excellent way to realize E-mode A1GaN/GaN MIS-HEMTs with both high Vth and IDS.展开更多
文摘首先测试了Cascode结构的氮化镓增强型高电子迁移率晶体管(GaN E-HEMT)的输出、转移特性曲线,分析了导通电阻、输入电容等影响开关特性的电参数。接着分析了单相逆变电路结构,研究表明,采用GaN E-HEMT可极大地减小单相逆变电路的输出滤波电容、电感的体积。最后,比较分析了影响Cascode GaN E-HEMT和Si基MOSFET的损耗参数,并基于这两种器件结构分别搭建了两种单相逆变电路。测试结果表明,工作频率为8~90 kHz时,基于Cascode GaN E-HEMT的逆变电路的转换效率为90%以上,温度维持于25.3℃~29.3℃范围。基于Cascode GaN E-HEMT的逆变电路的总体性能优于基于Si基MOSFET的逆变电路。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61474091)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(Grant No.ZHD201206)+1 种基金the New Experiment Development Funds for Xidian University,China(Grant No.SY1213)the Scientific Research Foundation for the Returned Overseas Chinese Scholars
文摘The degradation mechanism of enhancement-mode Al Ga N/Ga N high electron mobility transistors（HEMTs） fabricated by fluorine plasma ion implantation technology is one major concern of HEMT＇s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the Al Ga N barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the Al Ga N barrier layer by electrons injected from 2DEG channel.Furthermore, our results show that there are few new traps generated in the Al Ga N barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons.
文摘A voltage-controlled ring oscillator （VCO） based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor （HEMT） logic is proposed. An enhancement-mode HEMT （E-HEMT） is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.
基金Project supported by the National Natural Science Foundation of China(Nos.61474101,61106130)the Natural Science Foundation of Jiangsu Province of China(No.BK20131072)
文摘A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0.7N） as a barrier layer and relies on silicon nitride （SIN） passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide （AL2O3） by atomic layer deposition （ALD） on A1GaN surface would not increase the 2DEG density in the heterointerface. ALD AL2O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length （LG） of 1 μm showed a maximum drain current density （IDs） of 657 mA/mm, a maximum extrinsic transconductance （gin） of 187 mS/ram and a threshold voltage （Vth） of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of AL2O3 gate insulator. This provided an excellent way to realize E-mode A1GaN/GaN MIS-HEMTs with both high Vth and IDS.
