Based on thermodynamic equilibrium theory,a chemical equilibrium model for GaN g rowth is given in electron cyclotron resonance plasma enhanced metalorganic chem ical vapor deposition (ECR-PEMOCVD) system.Calculation ...Based on thermodynamic equilibrium theory,a chemical equilibrium model for GaN g rowth is given in electron cyclotron resonance plasma enhanced metalorganic chem ical vapor deposition (ECR-PEMOCVD) system.Calculation indicates that the growt h driving force are functions of growth conditions:group Ⅲ input partial press ure,input Ⅴ/Ⅲ ratio,and growth temperature.Furthermore,the growth phase diag rams of hexagonal and cubic GaN film growth are obtained,which are consistent wi th our experimental conditions to some extent.Through analysis,it is explained t he reason that high temperature and high input Ⅴ/Ⅲ ratio are favorable for he xagonal GaN film growth.This model can be extended to the similar systems used f or GaN single-crystal film growth.展开更多
InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl ...InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N 2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml min 1 . The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material.展开更多
文摘Based on thermodynamic equilibrium theory,a chemical equilibrium model for GaN g rowth is given in electron cyclotron resonance plasma enhanced metalorganic chem ical vapor deposition (ECR-PEMOCVD) system.Calculation indicates that the growt h driving force are functions of growth conditions:group Ⅲ input partial press ure,input Ⅴ/Ⅲ ratio,and growth temperature.Furthermore,the growth phase diag rams of hexagonal and cubic GaN film growth are obtained,which are consistent wi th our experimental conditions to some extent.Through analysis,it is explained t he reason that high temperature and high input Ⅴ/Ⅲ ratio are favorable for he xagonal GaN film growth.This model can be extended to the similar systems used f or GaN single-crystal film growth.
基金supported by the National Natural Science Foundation of China (No. 61040058) (No. 60976006)the Fundamental Research Funds for the Central Universities (No.DUT10LK01)the Science and Technology Foundation for Higher Education of Liaoning Province, China and Science and Technology Innovation Project Foundation for Higher Education School (No.707015)
文摘InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N 2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml min 1 . The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material.
