A method was developed to estimate EEPROM device life based on the consistency for break- down charge, QBD, for constant voltage time dependent dielectric breakdown （TDDB） and constant current TDDB stress tests. Alt...A method was developed to estimate EEPROM device life based on the consistency for break- down charge, QBD, for constant voltage time dependent dielectric breakdown （TDDB） and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, QBD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, △QFG, is measured, the lower limit of the EEPROM life can be related to QBD/△QFG. The method is reached by erase/write cycle tests on an EEPROM.展开更多
基金Supported the State Important Sci-Tech Special Projects(2009ZX02306-04)
文摘A method was developed to estimate EEPROM device life based on the consistency for break- down charge, QBD, for constant voltage time dependent dielectric breakdown （TDDB） and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, QBD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, △QFG, is measured, the lower limit of the EEPROM life can be related to QBD/△QFG. The method is reached by erase/write cycle tests on an EEPROM.
