高精度EGFET pH传感器检测电路设计

设计了一种利用延伸栅极型晶体管(EGFET)检测溶液pH值的电路,包括信号采集、信号转换与处理、放大电路设计、模数转换器(ADC)及软件设计部分。实测结果表明:设计的电路在溶液pH值4~10范围内输出电压的灵敏度为39.68 m V/pH。与传统的pH玻璃电极相比,设计的传感器具有响应速度快、易于封装、对光和温度不敏感、稳定性好等特点。

Study on the Characteristics of the Ruthenium Oxide pH Electrode

Ruthenium oxide,which fabricated by radio frequency sputtering is used as the sensitive membrane,which shows that the pH sensitivity is very high and has a linear response in different buffer solutions.The pH electrode,which applies the structure of separative structure EGFET (Extended Gate Field Effect Transistor) insteads of the conventional gate ISFET (Ion Sensitive Field Effect Transistor) for reducing the cost of the fabrication and measurement.Unfortunately,the performance of the pH sensor was falsified by the drift and hysteresis.In addition,the total response is composed of the intrinsic response and drift,and the hysteresis effect combines the slow response with drift.Consequently,we would also investigate the drift in the buffer solutions and hysteresis effect in the different paths.In this way,the more accurate sensing properties are obtained by the RuO_x pH electrode.

Study on Extended Gate Field Effect Transistor with Nano-TiO-2 Sensing Membrane by Sol-Gel Method

The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.

Calibration of the Circuit Measurement for the Glucose Sensor

The extended gate field effect transistor (EGFET)has many advantages such as the fabrication is easy,low cost, easy to operate etc.The EGFET was applied to biosensor in recent years.In this study,the tin oxide (SnO_2)pH sensitive membrane was deposited on ITO glass,when the surface voltage which pH membrane changes,the gate voltage and current channel of MOSFET will change immediately to detect concentration of the glucose sensor.In this study we have devoted to research about the calibration of the circuit measurement for the glucose sensor,and study the calibration system of the drift and hysteresis.

Fabrication of the Sodium Ions Extended Gate Field Effect Transistor by Using the Entrapment Method

The sodium ion is necessary in physiological function and an important element in blood of human body,because the concentration of the sodium ion in the blood directly affects the functions of some organs or pathological feature,how to detect it is an important affair.In this paper,we measure the concentration of sodium ions by the extended gate field effect transistor (EGFET).We use three different substrates RuO_x/p-Si,ITO glass,SnO_2/ITO to fabricate EGFET,and we choose the optimum structure.The fabrication of device needed to use the entrapment method.

Titanium Oxide Nanorods pH Sensors:Comparison between Voltammetry and Extended Gate Field Effect Transistor Measurements

In recent years there has increased interest in the characterization of titanium oxide nanorods for application in analytical devices. The titanium oxide nanorods (NRTiO) were obtained by hydrothermal reaction with a NaOH solution heated in the autoclave at 150°C for up to 50 h. Experimental data indicate that the prepared nanorods consist of anatase and rutile phases, with a possible interlayer structure. The NRTiO was investigated as pH sensor in the pH range 2 - 12, and the extended gate field effect transistor (EGFET) configuration presented a sensitivity of 49.6 mV/pH. Voltammetric data showed a sensitivity of 47.8 mV/pH. These results indicate that the material is a promising candidate for applications as an EGFET-pH sensor and as a disposable biosensor in the future.