Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.

Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology

A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photo- diodes （EC-UTC-PDs） and intra-step quantum well electroabsorption modulators （IQW-EAMs） on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 t2 thin-film resistor and a bypass capacitor integrated on a chip.

All-Optical Wavelength Conversion With Multi-Channel Broadcasting at 10 Gb/s Using an Electroabsorption Modulator

All-optical wavelength conversion has been demonstrated with an electroabsorption modulator based on cross-absorption modulation. For the first time, simultaneous broadcasting up to 6 different wavelengths at 10Gb/s is obtained with less than 0.5-dB polarization dependence.

The design of electroabsorption modulators with negative chirp and very low insertion loss

Electroabsorption modulators（EAMs） with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells（AICD-SQWs） based on InGaAlAs material.For this purpose,the electroabsorption coefficient is calculated over a range of wells layer strain from compressive（CS） to tensile（TS）.The chirp parameter and insertion loss for TE input light polarization are evaluated from the calculated electroabsorption spectra,and their Kramers-Kronig transformed refractive index changes.The results of the numerical simulation show that the best range of left and right wells strain for EAMs based on AICD-SQWs with negative chirp and very low insertion loss are from 0.032%to 0.05%（TS） and-0.52% to-0.50%（CS）,respectively.

Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.

20-GHz optical pulse source based on cascaded electroabsorption modulators

A high-quality low-timing-jitter 20-GHz optical pulse train is generated by using two cascaded sinusoidally driven electroabsorption modulators （EAMs） at very low bias voltage of -0.8 V in conjunction with atunable distributed feedback （DFB） semiconductor laser. An approximate transform-limited optical pulse, with the pulse width less than 7 ps, the spectral width of 0.3 nm, and the side-mode suppression ratio （SMSR） above 20 dB, is obtained by tuning the optical delay line.

High-performance electroabsorption modulator

A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response （E/O response） without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

Strain effects on performance of electroabsorption optical modulators

This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.

Electroabsorption spectrum of substituted polyphenylacetylenes

Electroabsorption (EA) measurements on thin films of poly[ o (trimethylsilyl) phenylacetylene] and poly[ o (trimethylsilylmethyl) phenylacetylene] have been performed. The spectral change induced by an exernal electric field (EA spectra) has been observed, which shows the similar shape of the second derivative of the optical absorption spectra. The change in the absorption Δ α is obtained from the EA spectrum, and Δ n is calculated through Kramers_Krong transformation. The optical properties of substituted polyphenylacetylenes (PPAs) were discussed.

Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature

We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.

Analysis of phase regeneration of DPSK/DQPSK signals based on phase-sensitive amplification

Amplification and phase regeneration can be realized using a phase-sensitive amplifier （PSA）. The phase regeneration of differential phase-shift keying （DPSK） signals based on PSA is analyzed theoretically. We realize the phase regeneration of differential quadrature phase-shift keying （DQPSK） signals based on a structure using two balanced PSAs. Simulations show that nearly ideal phase regeneration can be achieved for the DPSK/DQPSK signals.

Improving depth resolution of diffuse optical tomography with an exponential adjustment method based on maximum singular value of layered sensitivity

The sensitivity of diffuse optical tomography （DOT） imaging exponentially decreases with the increase of photon penetration depth, which leads to a poor depth resolution for DOT. In this letter, an exponential adjustment method （EAM） based on maximum singular value of layered sensitivity is proposed. Optimal depth resolution can be achieved by compensating the reduced sensitivity in the deep medium. Simulations are performed using a semi-infinite model and the simulation results show that the EAM method can substantially improve the depth resolution of deeply embedded objects in the medium. Consequently, the image quality and the reconstruction accuracy for these objects have been largely improved.

Hybrid silicon modulators

A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers, and detectors. In this letter, two types of hybrid silicon modulators, flflfilling the building blocks in optical communication on this platform, are presented. A hybrid silicon electroabsorp- tion modulator, suitable for high speed interconnects, with 10-dB extinction ratio at -5 V and 16-GHz modulation bandwidth is demonstrated. In addition, a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V.mm voltage-length product, 150-nm optical bandwidth, and a large signal modulation up to 10 Gb/s.

Record-high near-band-edge optical nonlinearities and two-level model correction of poled polymers by spectroscopic electromodulation and ellipsometry

The determination of nonlinearities near the band edge of organic and polymeric electro-optic(EO)materials is important from the viewpoint of molecular nonlinear optics(NLO)and photonic device applications.Based on transmission-mode Stark effect electromodulation(EM)spectroscopy,we study the electric-field-induced changes in optical absorption and refraction of newly developed EO polymers from the visible to near-infrared(NIR)wavelengths and report record-high near-band-edge complex EO effects from poled thin films.Values ofΔn andΔk up to 10^(-3) and 10^(-2) are found at an applied electric field of 2.0×10^(5)-3.0×10^(5)V/cm.The study of linear optical properties of poled films by spectroscopic ellipsometry shows large polinginduced birefringence and a nearly two-fold increase in the extinction coefficients at the extraordinary polarization.Through the Kramers-Kronig analysis,we obtained the real and imaginary second-order nonlinear coefficients up to~3,500 and~5,600 pm/V,respectively,which are believed to be the highest NLO coefficients of poled polymers through the resonance enhancement.Our approach goes beyond the previous works,applicable only to several discrete wavelengths,to a full-spectral analysis with independent verification of slab waveguide measurements.By considering both the electroabsorption and electrorefraction effects,our study overcomes the limitation of the classic qualitative two-level model and provides a quantitative understanding of near-resonance optical nonlinearities of organic EO materials.It can inspire the exploration of high-speed,absorptive,or phase-shifting light-modulators using EO polymers for on-chip applications.

High speed optical modulation in Ge quantum wells using quantum confined stark effect

We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect （QCSE） electroabsorption in Ge quantum wells （QWs） with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QW structures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3.5 GHz, a small driving voltage of 2.5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high- speed photocurrent response are investigated.