The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes （LEDs） is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelen...The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes （LEDs） is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current, which results from the Mg-dopant-related polarization screening. The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region. Light outputs follow the power law L α I^m, with smaller parameter m in the LEDs with less Mg back-diffusion, indicating a lower density of trap states. The trap-assisted tunneling current is also suppressed by reducing Mg- defect-related nonradiative centers in the active region. Furthermore, the forward current-voltage characteristics are improved.展开更多
The doping content of Mg plays an important role in the crystalline structure and morphology properties of Zn_(1-x )Mg_xO thin films. Here,using radio-frequency magnetron sputtering method,we prepared Zn_(1-x )Mg_xO t...The doping content of Mg plays an important role in the crystalline structure and morphology properties of Zn_(1-x )Mg_xO thin films. Here,using radio-frequency magnetron sputtering method,we prepared Zn_(1-x )Mg_xO thin films on single crystalline Si(100) substrates with a series of x values. By means of X-ray diffraction(XRD) and scanning electron microscope(SEM),the crystalline structure and morphology of Zn_(1-x )Mg_xO thin films with different x values are investigated. The crystalline structure of Zn_(1-x )Mg_xO thin film is single phase with x<0.3,while there is phase separation phenomenon with x>0.3,and hexagonal and cubic structures will coexist in Zn_(1-x )Mg_xO thin films with higher x values. Especially with lower x values,a shoulder peak of 35.1° appearing in the XRD pattern indicates a double-crystalline structure of Zn_(1-x )Mg_xO thin film. The crystalline quality has been improved and the inner stress has been released,after the Zn_(1-x )Mg_xO thin films were annealed at 600 °C in vacuum condition.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61505197 and 61334009the National High-Technology Research and Development Program of China under Grant No 2014AA032604
文摘The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes （LEDs） is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current, which results from the Mg-dopant-related polarization screening. The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region. Light outputs follow the power law L α I^m, with smaller parameter m in the LEDs with less Mg back-diffusion, indicating a lower density of trap states. The trap-assisted tunneling current is also suppressed by reducing Mg- defect-related nonradiative centers in the active region. Furthermore, the forward current-voltage characteristics are improved.
基金supported by the National Natural Science Foundation of China(Nos.20473077 and 61540071)the Project of Natural Science Research of High Education in Jiangsu Province(No.15KJD140002)+2 种基金the Fundamental Research Funds of Changzhou Science and Technology Bureau(No.CJ20160026)the Changzhou Modern Optoelectronic Technology Research Institute Funds(No.CZGY13)the Natural Science Funds of Changzhou Institute of Technology(No.YN1408)
文摘The doping content of Mg plays an important role in the crystalline structure and morphology properties of Zn_(1-x )Mg_xO thin films. Here,using radio-frequency magnetron sputtering method,we prepared Zn_(1-x )Mg_xO thin films on single crystalline Si(100) substrates with a series of x values. By means of X-ray diffraction(XRD) and scanning electron microscope(SEM),the crystalline structure and morphology of Zn_(1-x )Mg_xO thin films with different x values are investigated. The crystalline structure of Zn_(1-x )Mg_xO thin film is single phase with x<0.3,while there is phase separation phenomenon with x>0.3,and hexagonal and cubic structures will coexist in Zn_(1-x )Mg_xO thin films with higher x values. Especially with lower x values,a shoulder peak of 35.1° appearing in the XRD pattern indicates a double-crystalline structure of Zn_(1-x )Mg_xO thin film. The crystalline quality has been improved and the inner stress has been released,after the Zn_(1-x )Mg_xO thin films were annealed at 600 °C in vacuum condition.
